YMB 24 Search Results

YMB 24

Abstract: 28C256ERP f2807
Contextual Info: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP

Contextual Info: HY30FR060P FAST RECOVERY EPITAXIAL DIODE 600V / 30A VF=1.8V@IF=15A, trr=28ns FEATURES • • • • • • TO - 247AB UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant

Contextual Info: HY60FR060EP FAST RECOVERY EPITAXIAL DIODE FEATURES • • • • • • 600V / 60A VF=1.9V@IF=60A, trr=35ns TO - 247AC Modified UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant

diode sy 710

Abstract: YMB 24 H 04 D 35 sy 164 16-BYTE 80386DXRP 80386DXRP-16 80386DXRP-20 3BS16 T2716
Contextual Info: 80386DXRP SPACE PRODUCTS GROUP SE22V10B SEGMENTATION UNIT EFFECTIVE ADDRESS BUS PAGING UNIT 3-INPUT ADDER BUS CONTROL 34 PAGE CACHE LIMIT AND ATTRIBUTE PLA BUS PROTECTION TEST UNIT CONTROL AND ATTRIBUTE PLA INTERNAL CONTROL BUS BARREL SHIFTER, ADDER DECODE AND

F28-01

Abstract: YMB 24
Contextual Info: HIGH-SPEED EPI-CMOS 2048 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7203ERP SPACE PRODUCTS GROUP W 1 28 D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7203ERP XI FF W WRITE CONTROL WRITE POINTER THREESTATE BUFFERS EF XO/HF Q1 Q7 Q2 Q6 Q3 Q5 Q8 R READ CONTROL READ POINTER

F28-01

Contextual Info: HIGH-SPEED EPI-CMOS 4096 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7204ERP SPACE PRODUCTS GROUP W 1 28 D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7204ERP XI FF W WRITE CONTROL WRITE POINTER THREESTATE BUFFERS EF XO/HF Q1 Q7 Q2 Q6 Q3 Q5 Q8 R READ CONTROL READ POINTER

TM5004

Contextual Info: PRELIMINARY HIGH-SPEED EPI-CMOS 8192 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7205ERP SPACE PRODUCTS GROUP W VCC D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7205ERP XI FF Q0 DATA INPUTS D0-D8 W WRITE CONTROL WRITE POINTER READ POINTER RS EF XO/HF R Q1 Q7 Q2

D 2395

Abstract: 99C100032RP-7 TM5005
Contextual Info: 1 GIGA BIT DYNAMIC RANDOM ACCESS MEMORY MCM SPACE ELECTRONICS INC. 99C100032RP SPACE PRODUCTS GROUP 99C100032RP Block Diagram RAS0 - RAS3 CAS0 - CAS3 A0 - A11 256Megabit (32M x 8-bit) WE0 OE0 CAS3 RAS3 CAS2 RAS2 CAS1 RAS1 CAS0 RAS0 WE0 OE0 A0 - A11 DQ0 - DQ7

SD-87832-006

Abstract: Tube 4-400 ee 2020
Contextual Info: 10 CKT SIZE 4 A RIBS LOCATION VARY DEPENDING ON CKT. SIZES 10 14 16 L -TT-â 4.50 S 5.00 1.00 6.50 - TYP 2.00 TYP - 0 1 . 0 0 ± 0.05 - 4 .6 0 /8 \ |-$-|o s o Iy I (TYP) 26.65 Ï.65 30.65 1.50 <> 4.85 6.85 8.85 10.85 12.85 14.85 16.85 18.85 3.85 22.85 24.85

Contextual Info: HY8LFR060T FAST RECOVERY EPITAXIAL DIODE 600V / 8A VF=1.7V@IF=8A, trr=32ns FEATURES • • • • • • TO-220AC UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant APPLICATION

Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current

B24N10

Abstract: YMB 06
Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch

Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch

P24N10

Abstract: PJP24N10
Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current

mitsumi actuator camera

Contextual Info: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation

DDR266

Abstract: MS488A872DS-07
Contextual Info: MACROTRON MS488A872DS-07 8Mb x 72, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 64MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES T h e M a c r o t r o n M S 488A872DS - 07 i s an 8M bit x 72 bit DDR266 Synchronous Dynamic RAM high speed memory

DDR266

Abstract: DS-07 MS488A864DS-07
Contextual Info: MACROTRON MS488A864DS-07 8Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 64MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A864 DS-07 is an 8M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of eight CMOS 8M x 8 bit Double Data

Contextual Info: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation

Contextual Info: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation

mitsumi actuator camera

Contextual Info: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation

DDR266

Abstract: MS4168A3264DS-07 power window control
Contextual Info: MACROTRON MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES T h e M a c r o t r o n M S4816A3264DS - 0 7 i s an 32M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed

DDR266

Abstract: MS488A1672DS-07
Contextual Info: MACROTRON MS488A1672DS-07 16Mb x 72, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 128MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A1672DS-07 is an 16M bit x 72 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of eighteen CMOS 8M x 8 bit

DDR266

Abstract: MS488A1664DS-07
Contextual Info: MACROTRON MS488A1664DS-07 16Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 128MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A1664DS-07 is an 16M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of sixteen CMOS 8M x 8 bit Double

Contextual Info: BD540YT~BD5200YT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes TO-251AB Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .264(6.7) .248(6.3) • For surface mounted applications