YK NPN Search Results

2SC162

Abstract: 2SC1627 251C 2SA817 CRYSTAL 2SC
Contextual Info: ^'jDyNPNxey^mB^yvz.sK.pcTnñ SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS TENTATIVE o O mm&mmm Unit in mm o Driver Stag Amplifier Applications o Voltage Amplifier Applications t*r y /y * yk & b 2SA817 *51MAX. o 20-251 • Complementary to 2SA817 • 20'25W

mosfet protect

Abstract: IRF53 design ideas World transistors databook IRF530S LTC4251 LTC4252 LTC4252-1 LTC4253 SMAT70A
Contextual Info: DESIGN FEATURES –48V Hot Swap Controller Offers Comprehensive Protection for by YK Sim and Mitchell Lee Telecom Systems Introduction High performance, high reliability telecom systems employ distributed power modules to generate low voltage, high current supplies from a –48V

Contextual Info: TOSHI BA {DISCRETE/OPTO} 9097250 T O S H I B A DISCRETE/OPTO TO DE 1 ^ 7 5 5 0 ODlbCHQ 5 | 90D 16090 Df-33-3 S TOSHIBA GTR MODULE TOSHIBA SEMIC0NDUCT0R MG 1 5 0 M 2 YK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. tlOTOR CONTROL APPLICATIONS.

K034

Abstract: nopma KBAA cccp
Contextual Info: AKAÆEMHfl H A YK CCCP KOMHCCHfl nO npOEJIEMAM MHPOBOrO OKEAHA OTBeTCTBeHHLie pejjaKTOpw: axartcMHK JI.M î BpexoeCKux, floKTop fr m m io -MaTeMaTH'iecKHx H ayn H .E . A u d p e e e a MOCKBA ’’HAYKA” 1989 JIHTEPATypA 1. BpexoecKux JI.M. Bojihm b cjiohctux cpenax. M.: Hayica, 1957. 501 c.

AN3224K

Abstract: AN3224 5 pin transistor for 12v 3 amp DRVCC12
Contextual Info: AN3224K AN3224K V T R 4 ^ 'y K f f l ! B $ i 7 r > ,y 0 ! & /R e c o r d i n g S ig n a l • «R • T y p e m AN3224K1 J,V TRc04'^yK ffll£îST>7'|5]ïfi't LTtSrïf m ft A m p lifie r 2 -H e a d T-'Kffc m f]V 's \-3 -y -7 -r-s 7 J ftM • X 'i l*Jjl • i t »¡T ifi : VCC= 12V

4580C

Contextual Info: M H A yK TM B H b ie 6 e C K O H T a K T H b ie H o M e H B b lK J lt O H a T e J lM K n a i y p a m n a p a M e r p b i H a n p ^ D K e H iie n i/ iT a m if l n O C T O H H H O rO T O K a o o; O I 1 5 «o □; C x e M b i n o flic n t o H e H M S i « i c T p e iv m B b iB O fla M M

npn 8 transistor array

Abstract: "Microphone Preamplifiers" THAT380G pnp 8 transistor array
Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources

Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources

Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

478 SOCKET PINOUT

Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors 300 4 Matched PNP Transistors (320) 2 Matched NPNs and PNPs (340) 4 Matched NP6N - 4 Matched PNP (380) • Microphone Preamplifiers ·

ic marking YK

Contextual Info: 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4901 Absolute Maximum Ratings Ta = 25°C

2sd371

Abstract: 2SD371 TOSHIBA 2SD371-R 2SD371-Y 2SB531 AC73 2SD371R 2SD371Y 30W hi-fi audio power amplifier
Contextual Info: > Ua > N P N E l U f 2SD371 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE O iiz fr iite ffl O Power Amplifier Applications 9 9 \ \ : Pc = 50W •liiE tt. : V ceo = SOW . 2SB531 t 3 'S 7 ‘ ') '•> *9 i - ? . • 30W H i-Fi 'Jr— 71' ■< yy’

PN3563

Contextual Info: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage

Sunshine Science

Abstract: sunshine ST-302 82c08 22C02
Contextual Info: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is

U1W npn

Abstract: NPN VCEo 1000V transistor yk
Contextual Info: MG75M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=75A)

2SC4171

Contextual Info: Ordering number: EN 2547A 2SC4171 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features High breakdown voltage V CBq £800V Fast switching speed Wide ASO Suitable for sets whose height is restricted Absolute Maximum Ratings at Ta=25°C

Contextual Info: 3A I H 2SC4978 CTE3S8 VSERIES NPN) a * 9 - 121 Outline Dimensions A bsolute Maximum R atings m CJ3 nC 7=ï Symbol s Item & ft Conditions T s tg Storage Temperature i£ £ -g i5 > & * Junction Temperature 3 ^ ? • 'x: — x i t Collector to Base Voltage

v 817 y

Contextual Info: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C

Hitachi DSA00279

Contextual Info: 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4901 Absolute Maximum Ratings Ta = 25°C

ldm-a

Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRAN SISTO R TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product ff“600MHz Typ • High Power Gain Gre»22dB at f-IOOMHz ABSOLUTE MAXIMUM RATINGS { l k=25X:) Characteristic Sym bol

Hitachi DSA002756

Contextual Info: 2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline 2SC5218 Absolute Maximum Ratings Ta = 25°C

KRC830U

Abstract: KRC831U KRC832U KRC833U KRC834U ic marking YK
Contextual Info: SEMICONDUCTOR KRC830U~KRC834U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 2 5 3 4 A C A1 Reduce a Quantity of Parts and Manufacturing Process.

KRC830E

Abstract: KRC831E KRC832E KRC833E KRC834E ic marking YK
Contextual Info: SEMICONDUCTOR KRC830E~KRC834E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 6 2 5 3 4 A1 Simplify Circuit Design.