BY550-600
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability in DO-201AD package.Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications. |
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BY550-800
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SUNMATE electronic Co., LTD
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5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C. |
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BY550-400
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SUNMATE electronic Co., LTD
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5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C. |
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BY550-50
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications. |
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BY550-200
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability in DO-201AD package. |
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BY550-100
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications. |
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BY550-1000
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability in DO-201AD package.Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications.Axial leaded silicon rectifier diode with 5.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, and high surge current capability, suitable for single-phase half-wave applications.5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C.5.0A axial leaded silicon rectifier diode with 50 to 1000V repetitive peak reverse voltage, low forward voltage drop of 1.1V at 5.0A, high surge current capability, and operating junction temperature from -65 to +175°C. |
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BY550-600
