XTEN Search Results

XTend1000

Abstract: VME COnnector atx power VME PMC pc motherboard
Contextual Info: XTend1000 Flexible PC xtender Card for CompactPCI and PMC Module Development Features • Turns a PC Motherboard Into a CompactPCI or PMC Module Development System • ATX Power Connector Allows Use Without a PC • Built in 10A, 3.3V Supply for 5V Only Backplanes

l0915

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS NT n ìc h ìc o n S c re w T e rm in a l T y p e , W id e T e m p e r a tu re R a n g e series • Load life of 5 ,0 0 0 hours 2 ,0 0 0 hours for 1 0 -2 5 0 V application of ripple current at + 1 0 5 ° C . • E xtended voltage range from 10V up to 4 5 0 V .

MaxStream

Abstract: xtend maxstream oem module xtend
Contextual Info: Quick Start Guide XTend 1 Watt Module Development Kit Range Test Setup Range Test Execution Tips and Suggestions Contact MaxStream Create a Long Range Wireless Link In Minutes. www.maxstream.net 2005 MaxStream, Inc. All rights reserved. MD0016 WARNING: When operating with 1 Watt power output, transmitting in close

COMM CON WORLDWIDE

Contextual Info: November 1996 Revision 1.0 FUJITSU HATA G H F F T EDC2B V7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC), Buffered General Description The E D C 2 B V 7 2 8 2 -(6 0 /7 0 )JG -S is a high pe rfo rm an ce, EDO (E xten ded D ata O ut) 16-m egabyte dyn am ic RAM m odule org an ized

LSC26XX

Abstract: LSC2644 edfa 1550 tec driver peltier
Contextual Info: That mL'fim PHEWLETT ACKARD DWDM 1.25 Gb/s DFB Laser Module with Integral Optical Isolator Technical Data LSC26XX Features D escription • Center W avelength betw een 1528 nm and 1602 nm • E xtended W avelengths for u se in system s requiring no am plifiers

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - E D C 1 U V 6 4 1 1 !4 -(60/70)(J/T)G - S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The ED C 1U V 641(1/4)-(60/70)(JA T )G -S is a high pe rform ance, EDO (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a ­

Contextual Info: 9XXX Series CO NN ECTIO N DIAGRAMS PINOUT A / 9005 9008 XTENDABLE AND-OR-INVERT GATES XTENDER 9006 'F o u r e xtenders (9006) m ay be tied to these term inals V c c = Pin 14 G N D = Pin 7 PINOUT B 5 DESCRIPTION: — The 9005 and 9008areAND-O R-INVER T gates which may

Contextual Info: Bulletin 125160/B International Rectifier ST280CH.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features • 500A C en ter am plifying gate ■ M e tal case with ceram ic insulator ■ International standard ca se T O -2 0 0 A B A -P U K ■ E xtended te m p erature range

Contextual Info: 7/8" TO 3" DIAMETER BUSHING MOUNT BUSHING MOUNT/SLEEVE BEARING MODEL 2202 HYBRID SINGLE-TURN PRECISION POTENTIOMETERS 2202 BUSHING MODEL ELECTRICAL 354° T h e o re tic a l E le c tr ic a l Travel N orm al R e sista n ce R an ge E xtended R e sis ta n ce R a n g e d

SSS2N80A

Contextual Info: Advanced SSS2N80A Power MOSFET FEATURES BV DSS = 800 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 1 .5 A ■ E xtended S afe O pe ra ting A rea

mosfet xb

Abstract: SSS3N90A
Contextual Info: Advanced SSS3N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 2 A ■ E xtended S afe O pe ra ting A rea

SSS6N90A

Contextual Info: Advanced SSS6N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y 900 V 2.3 Q. ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 3.5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

SSS7N60A

Contextual Info: Advanced SSS7N60A P o w e r MOSFET FEATURES — 600 V ^ D S o n = 1 . 2 Q. D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = ■ E xtended S afe O pe ra ting A rea

Contextual Info: Advanced SFW /I9Z24 P o w e r MOSFET FEATURES B V DSS — -6 0 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y R ü S o n - ■ Lo w e r Input C a pa citance lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

power mosfet j 162

Abstract: Q HA 174
Contextual Info: IRFW /I630A Advanced Power M O SFET FEATURES = 200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n - ■ E xtended S afe O pe ra ting A rea ■

mosfet yb

Abstract: IRFSZ14A
Contextual Info: Advanced IRFSZ14A P o w e r MOSFET FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ — ^ D S o n = lD = 60 V 0 .1 4 Q. 8 A Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

800V 40A mosfet

Abstract: SSF9N80A SSH9N80A
Contextual Info: Advanced SSH9N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge D S S — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea

Contextual Info: Advanced SSW /I2N80A Power MOSFET FEATURES B V dss = 800 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n - ■ E xtended S afe O pe ra ting A rea

Contextual Info: Advanced SFR/U9130 P o w e r MOSFET FEATURES BVDSS — -100 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = -9.8 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

MOSFET SSR

Abstract: U1N60
Contextual Info: SSR/U1N60A P o w e r MOSFET FEATURES BV D SS • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A (M ax.) @ V DS = 600V

JIS G3141

Contextual Info: D-SUB CONNECTORS EXAM PLE & ORDERING CODE STRAIGHT PDI - NUM BER O F PINS: S- 15 = = = = W H 09 15 25 37 G ENDER: =s MALE FEMALE =R T ER M IN ATIO N TYPE: P.C. PINS — BLANK SOLDER CUP = s E XTENDED P.C. PINS = E INSULATOR COLOR: BLACK = BLANK W HITE = w

SSF6N70A

Contextual Info: Advanced SSF6N70A Power MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

IRFS720A

Abstract: mosfet yb
Contextual Info: Advanced IRFS720A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ^ D S o n lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage