XS 630 B Search Results

Contextual Info: Data Sheet SLI-570 / SLA-570 Series Features ・Viewing angle 2θ 1/2 : 20 SLI-570 Series ・Viewing angle 2θ 1/2 : 25 (SLA-570 Series) ・High brightness Color Type U D Y M Specifications Viewing angle 2θ 1/2 / 20 : High brightness Part No. Chip Structure

Contextual Info: Features * * * * * * * * * * * Fast Read Access Time - 70 ns W ord-wide or Byte-wide Configurable 4 Megabit Flash and Mask ROM Com patible Low Power CMOS Operation - 100 [jA Maximum Standby - 50 mA Maximum Active at 5 MHz Wide Selection o f JEDEC Standard Packages

Contextual Info: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP

Contextual Info: N AMER PHILIPS/DISCRETE PULSED M ICROW AVE POW ER TR A N S IS TO R NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications. Features • Interdigitated structure; giving a high emitter efficiency

0632C

Abstract: Atmel AT27C T27c2048 atmel 032
Contextual Info: Features * Fast Read Access Time - 55 ns * Low Power CMOS Operation - 100 |jA Maximum Standby - 35 mA Maximum Active at 5 MHz * JEDEC Standard Packages - 40-Lead 600 mil PDIP - 44-Lead PLCC - 40-Lead VSOP 10 mm x 14 mm * Direct Upgrade from 512K-bit and 1M-bit (AT27C516 and AT27C1024) EPROMs

Contextual Info: □ IXYS Preliminary Data Sheet IGBT S ym bol IXGA/IXGP12N100 IXGA/IXGP12N100A T e st C o n d itio n s V CES ^C25 V CE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V M a xim u m R a tin g s Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 1 M ß 1000 1000 V Continuous

Contextual Info: Thn% L ET T mifíM HP AEW CKARD SnapLED LEDs HP SunPower Series HPWT-SHOO HPWT-PHOO HPWT-SLOO HPWT-PLOO Technical Data B enefits • Fewer LEDs Required • Lower Total System Cost • Mounted on Formable Substrate Which Enables 3-Dimensional Applications

Contextual Info: su GEC P L E S S E Y S E M I C O N D U C T O R S DS4090-2.2 DG406BP25 GATE TURN-OFF THYRISTOR KEY PARAMETERS APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . 1000A TCM V DRM ■ Uninterruptable Power Supplies 2500V 400A 1000V/HS 300A/HS

5963-2323E

Contextual Info: Wtipt mLUM HP AECWKLAERTDT T-l 3 mm , High Performance AlInGaP LED Lamps Technical Data HP SunPower Series HLMA-KLOO Series HLMA-KHOO Series Features • Outstanding LED Material Efficiency • High Light Output over a Wide Range of Currents • Low Electrical Power

840-Series

Abstract: 840-Serie 8400.2281 8400-1475 8459 TOOL SOURIAU souriau 8522 MS3191-1 8400-148A MS3191 8400-482
Contextual Info: 84 Series Presentation The 84 bayonet series has been especially designed for light and harsh environment. Its physical characteristics and performances are appreciated in a large range of applications including : • Factory automation - Machine tool - Light electronics : 840 series

TRANSISTOR SMD MARKING CODE 2P

Abstract: SMD TRANSISTOR MARKING 1L SMD TRANSISTOR MARKING jf
Contextual Info: SIEMENS 2-P h ase S tepper-M otor D river TLE 4729 G Bipolar-IC Overview Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Very low current consumption in inhibit mode • Fast free-wheeling diodes

1.50 MKT - 2200PF - 630V

Abstract: A50eF arcotronics 2,2uF 400v A50Q a50 arcotronics 1.50 MKT - 0.047UF - 100V arcotronics 6,8uF 400v capacitor 1.5nf 100v mkt a50d
Contextual Info: A50 MKT Series METALLIZED POLYESTER FILM CAPACITOR MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:AUTOMOTIVE . PRODUCT CODE: A50 D max <7 0.6 0 d± 0.05

7ET4L21

Contextual Info: oh P0 U1EREX INC de I 7 2 ^ 5 1 oGoaa^b 3 T -25-19 CR400FM A Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 PhSSG Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.7S.1S 4QQ A m p S F B S A v g C O flttO l

soic 208 mil

Abstract: automobile drawings control code data sending process DS1651 DS1651S DS1652 DS1652S DS1691 Remote ignition key
Contextual Info: DS1651, DS1652 D S 1651 DALLAS 3-Code Lock SEMICONDUCTOR D S 1652 Key Match Memory System FEATURES PIN ASSIGNMENT • The two-chip lock and key system forms the basis of a secure access system SEND2 O C 1^ 2 LEARN Q E 3 nr 4 Vcc • The match memory system is compatible with a vari­

MSM518128

Abstract: MSM518128L
Contextual Info: O K I Semiconductor MSM5 18128/L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 518128/L achieves high integration, high-speed operation, and low-power

Contextual Info: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90

Contextual Info: WRAP-AND-FILL METALIZED FILM CAPACITORS Type 730P High-Frequency Wrap-and-Fill Metal ized Polypropylene Film Capacitors Features— • • • • • Excellent AC Performance Low Power Dissipation Low Dielectric Absorption Close Tolerance High Stability

MHW591

Abstract: MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
Contextual Info: Order this document by AN779/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN779 LOW-DISTORTION 1.6 TO 30 MHz SSB DRIVER DESIGNS Prepared by: Helge O. Granberg RF Circuits Engineering GENERAL CONSIDERATION Two of the most important factors to be considered in

ARCOTRONICS MKP

Abstract: arcotronics mkp 15 k 630 A70GT
Contextual Info: ARCOTRONICS A70 Loose Taped MKP Series METALLIZED POLYPROPYLENE CAPACITOR MULTIPURPOSE APPLICATIONS 4 0 ±5 Lmo':. Typical applications', temperature compensation circuits, timing, oscillator circuits, power factor correction and coupling capacitor in SMPS

Contextual Info: Features * Fast Read Access Tim e - 45 ns * Low Power CMOS Operation - 100 |jA max. Standby - 30 mA max. Active at 5 MHz * JEDEC Standard Packages - 44-Lead PLCC - 40-Lead VSOP 10mm x 14mm * 5V + 10% Power Supply * High Reliability CMOS Technology - 2000V ESD Protection

Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

65614

Abstract: Electronic Concepts 5MP12
Contextual Info: Type 5 M P Switch • Mode Power Supply C ap acito rs Capacitors Metallized Polypropylene and Military Styles CFR13 and CFR14. Typ e 5MP capacitors have been developed by Electro nic Concepts for use in switching power supplies. These metallized polypropylene capa­

Contextual Info: FQU20N06L N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQP20N06L N-Channel QFET MOSFET 60 V, 21 A, 55 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce