XR-082 N Search Results

XR-082

Abstract: XR-082CP TL083 XR082CP XR-083 XR-082CN Xr083 XR-082 N XR082M OP tl 082
Contextual Info: Z * EX4R XR-082/083 Dual Bipolar JFET Operational Amplifier FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION The XR-082/XR-083 family of dual bipolar JF E T opera­ tional amplifiers are designed to offer higher perform­ ance than conventional bipolar op amps. Each amplifier

T1451

Abstract: 471 1kv 101 2KV CAP 103 2KV 472 1kv CAP f 103 2KV 821 2kv 681 1kv 103 1KV SEC CAP 250V 4700
Contextual Info: HC Series Multilayer Ceramic Chip Capacitors High Voltage MERITEK PECIFICATIONS CODE NPO (1B) X7R (2R1) o ∆C ±15% Temperature Characteristics 0 ±30ppm/ C Dissipation Factor (D.F.) 0.15% max. 2.5% max. (+25oC, 1Vrms, 1MHz) (+25oC, 1Vrms, 1 KHz) Insulation

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

MSC 501 302

Abstract: MSC 501 302 diode B 103 K 1KV SEC ceramic capacitor ceramic capacitor 1kV 6.8 nF X7R 3KV 3300 pf ceramic capacitor 6,8 nF 1kV p 5 capacitor 103 1KV 1210 ceramic capacitor .22uf 10 250V Meritek 6.8 nF ceramic capacitor MSC 501
Contextual Info: MA Series Multilayer Ceramic Chip Capacitors MERITEK FEATURES AND APPLICATIONS Dielectric x COG x NPO x x x X7R/X5R x x x Y5V x Features Ultra-stable Low dissipation factor Tight tolerance available Good frequency performance No aging of capacitance

Contextual Info: n m c THE RESISTOR PEOPLE HIGH RELIABILITY SURFACE MOUNT RESISTOR MCHP SERIES • • • • • Reliable Metal Glaze technology Superb solderability - reflow & wave Minimum board real estate requirements Established SPC and continuous improvement programs

300N-120

Abstract: 233110
Contextual Info: ± i g b t ^ ^ z l - ; 1 MBI300N-120 r N '> y - X j u J 1200V/300A/ 1 • 4^^ : Features 'V + ' s V High •^/± SERj Speed Switching Voltage Drive Low Inductance Module Structure • o : Applications 4 > '< — $ Inverter for Motor Drive — • A C ,D C '9 '“ # 7 * > 7 P AC and DC Servo Drive Amplifier

Contextual Info: CTS Series 550 3/4" Diameter, 2 watt cerm et variable resistors • high stability and reliability • excellent overload capacity • low noise, long life • multiple section controls available • excellent high frequency characteristics • molded terminal base

2N7002ESPT

Abstract: 2N7002ES 2N70 pK1 TRANSISTOR ISS101
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002ESPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 MARKING .055 1.40 .047 (1.20)

Contextual Info: BASIC ORDER UNIT nichicon • Request on O rder Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Bulk Size o f product Long lead Taping L ead fo rm e d ¿3 ¿4 ¿5 — — 2.000

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

ad2410

Abstract: adv7682 ADV7782WBBCZ ADV7782 AD8465 APIX2 AD7908
Contextual Info: Automotive Recommended Part List ARPL PRODUCT CATEGORY GENERIC NUMBER AMBIENT TEMP RANGE MATERIAL DESCRIPTION Updated: 10-Jul-2015 PACKAGE MATERIAL NUMBER ITEM Amplifiers and Comparators AD8040 -40C to 125C Quad Low Power R-R I/O Amp. 14-TSSOP_4.4-4.4_MM

jb 5531

Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
Contextual Info: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

UPA61A

Abstract: UPA60A PA60A UPA61 T108
Contextual Info: NEC j m + T t v r x Y = 7 7 . 9 C o m p o u n d F ie ld -E ffe c t T ra n s is to r A / / P A 6 A , 6 1 A i i f t i m m N-Channel Silicon Dual Junction FET Differential Am plifier Industrial Use HP A 60 A , 9YMM /PACKAGE DIMENSIONS Unit: mm 6 1 A ii,N f- -v ^ ;U x > ;

KS007B

Abstract: samsung " driver lc" panel or display se022 SE652 TSS16S DB300-02 1885 sam sung dh db3 531 LCD 07 064 060
Contextual Info: KS0078 34COM/120SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION KS0078 Is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. It can display 1,2, or 4 lines with 5 x 8 or 6 x 8 dots format. FUNCTIONS • • ■

4558 equivalent

Abstract: XR4741CP XR-4741CP XR-4558CP XR-4739 LM 4741 SN72558P transistor tt 2206 RC4739DB equivalent 4558 lowpass filter CIRCUIT DIAGRAM
Contextual Info: $ 1.75 OPERATIONAL AMPLIFIER DATA BOOK First in Q uality.First in Service • Custom, Semi-custom and Standard IC's E fu tu r e e l e c t r o n ic s 4800 Oufferin Street Downsview, Ontario M3H 5S8 Tel.: 416 663-5563 in c . Introduction This D ata Book contains a com plete sum m ary o f technical

Contextual Info: 155 Mbps ATM SAR CONTROLLER WITH ABR SUPPORT FOR PCI-BASED NETWORKING APPLICATIONS PRELIMINARY INFORMATION IDT77252 Integrated Device Technology, Inc. KEY FEATURES • Full-duplex Segmentation and Reassembly SAR at 155 Mbps "wire-speed" (310 Mbps aggregate speed).

klystron lamps

Abstract: MIL-R-19523 MIL-R-5757 Mil-T-23648 MIL-S-8834 mil-s-8805 1000w inverter design and calculation MIL-R-39007 MIL-L-6363 MIL-STD-756
Contextual Info: MIL-HDBK-217F BEF?1991 SUPERSEDING MIL-HDBK-217E, 2 J8nwry 1990 MILITARY NotIce 1 HANDBOOK . RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT AMSC N/A DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited. MIL-HDBK-217F DEPARTMENT OF DEFENSE

ABB 07 kr 240

Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
Contextual Info: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

Contextual Info: MACH 5 CPLD Family BEYOND PERFORMANCE Fifth G eneration MACH A r c h it e l i. . ^ FEATURES — 128 to 512 m acrocell densities — 68 to 256 l/Os ♦ Wide selection of density and I/O combinations to support most application needs — 6 m acrocell density o ptions

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

Halbleiterbauelemente DDR

Abstract: information applikation MAA725 information applikation mikroelektronik VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik applikation "Mikroelektronik" Heft mikroelektronik DDR applikation heft
Contextual Info: LnnJütkilr'l; E l d - t = n a | - | i l - C Information Applikation D/A WandlerFamilie wvReferenz Stromquellen­ schalter /« Widerstands­ netzwerk 1 J • -CCI w f f i ni ö l k ä r i' t s i s l s S - t f c s n o r i i l - t i iforma t l o n pplikation

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d