XG SERIES CAP Search Results

Q3851

Abstract: Q3851CA XG-1000CB Q3851CA00 E125 XG-1000CA Q385
Contextual Info: Crystal oscillator Epson Toyocom Product Number please contact us XG-1000CA: Q3851CA00xxxx00 XG-1000CB: Q3851CB00xxxx00 CRYSTAL OSCILLATOR LOW-JITTER SAW OSCILLATOR XG - 1000CA / CB series •Output frequency range •Supply voltage •Frequency tolerance

Crystal oscillator 12 MHz

Contextual Info: Crystal oscillator Epson Toyocom Product Number please contact us XG-1000CA: Q3851CA00xxxx00 XG-1000CB: Q3851CB00xxxx00 CRYSTAL OSCILLATOR LOW-JITTER SAW OSCILLATOR XG - 1000CA / CB series •Output frequency range •Supply voltage •Frequency tolerance

XG-1000

Abstract: XG-1000CB Q3851 E125 XG-1000CA
Contextual Info: Crystal oscillator Epson Toyocom Product Number please contact us XG-1000CA: Q3851CA00xxxx00 XG-1000CB: Q3851CB00xxxx00 CRYSTAL OSCILLATOR LOW-JITTER SAW OSCILLATOR XG - 1000CA / CB series •Output frequency range •Supply voltage •Frequency tolerance

Contextual Info: Crystal oscillator Epson Toyocom Product Number please contact us XG-1000CA: Q3851CA00xxxx00 XG-1000CB: Q3851CB00xxxx00 CRYSTAL OSCILLATOR LOW-JITTER SAW OSCILLATOR XG - 1000CA / CB series •Output frequency range •Supply voltage •Frequency tolerance

Contextual Info: 109 FILM CAPACITORS ORDERING CODE - BOX TYPE XGV 275 M 104 S 1 Voltage A – A Package 3 Digit 100 = 100V 250 = 250V 275 = 275V 30 Case Code 1 Digit A = Taping B = Bulk C = Cut Series Name 1 Digit XG-E = XG-V = XG-H = YE-D = YF-D = C XGE XGV XGH YED YFD Capacitance

Contextual Info: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

SB61L256BS-8

Abstract: SB61L256BS SB61L256BS-XG
Contextual Info: SB61L256BS-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BS-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256AT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256AT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

sb61l256bs

Abstract: SB61L256BS-XG
Contextual Info: SB61L256BS-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BS-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

SB61H1024AS

Abstract: SB61H1024AS-XG SB61H1024AS-12 SB61H1024AS-12G SB61H1024AS-10 SB61H1024A SB61H1024AS12
Contextual Info: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256A-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256A-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256AD-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256AD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256AT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256AT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and