X2M ST Search Results

xt90

Contextual Info: LR0G732208XB2JXT SHARP Preliminary Data Sheet 16M 2 x2M x 32 Flash Memory Module PIN ASSIGNMENT • High Performance C M O S Silicon Gate Process • Low Power Dissipation • All Inputs and Outputs Are Fully TTL And CM O S Compatible • Power Supplies:

3222S

Contextual Info: LH59F3222S5TAA SHARP Preliminary Data Sheet 16M 2 x2M x 32 Flash Memory Module • All Inputs and Outputs Are Fully TTL And CMOS Compatible • Power Supplies: - 5.0 V +10% Normal Operation - 5.0 V +10% Programming • 90 ns And 120 ns Access Time DESCRIPTION

PU3226

Abstract: 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3226 PU3226 Silicon NPN Triple-Diffused Planar Type Power Amplifier Package Dimensions U nitlm m • Features • High D C c u rre n t gain Kfe and good lin earity • Low c o lle c to r -e m itte r sa tu ratio n v o lta g e (Vc£<Sao)

2SB596

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)

LT3502

Contextual Info: DE M O CIR CU IT 1221 Q U ICK S TA R T GLT3502 U IDE LT3 5 0 2 1.1M H z , 5 0 0 m A , S te p -d o w n R e g u la to r in 2m m x2m m DF N DESCRIPTION Demonstration circuit 1221 is a monolithic step-dow n DC/DC sw itching regulator featuring the LT3502. The

SC14CVM2.4FLN

Contextual Info: ISOCOPI COMPONENTS LTD 4SE D • MflflbSlQ 00Q03S1 2 ■ ISO " p 2 5 - 3 l Preliminary Data Sheet Solid State Relays - 4 Pin SIP Package ISOCOHI ISRT44080 / ISRT46080 / ISRT44160 / ISRT46160 ISRX44080 / ISRX46080 / ISRX44160 / ISRX46160 • Features • •

EC10QS09

Contextual Info: SBD Type : EC10QS09 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

Contextual Info: SBD Type : EC21QS03L OUTLINE DRAWING FEATURES FEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel

Contextual Info: SBD Type : EC10QS03L OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

EC10QS04

Contextual Info: SBD Type : EC10QS04 EC10QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A tk 100 A p257
Contextual Info: Rower Transistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD1538, 2SD1538A U nit : mm 3.7 m ix. f—* • Features 6.5 max. • to w collector-eim itter saturation voltage Vceo.»

MC513

Abstract: RS-330 16V8 74HC245 led 7seg 43256 r06f ksp 36 93 74HC573 CB10
Contextual Info: JP2 VCC D[0.7] 1 2 3 /EA U4 U1 GND C1 21 1 GND 35 XT1 12MHz 22p C2 CLK 2 GND 12p 20 10 PRES2 14 15 16 17 P3.2 P3.3 P3.4 P3.5 X2L PA0 PA1 PA2 PA3 PA4 PA5 PA6 PA7 85 89 86 90 87 91 88 92 2 3 4 5 6 7 8 9 P1.0 P1.1 SCLK SRI STO /SLS P1.6 P1.7 12 44 1 KITCON-X

300x2

Abstract: 2SD799 AC75 hFE-60
Contextual Info: TOSHIBA {D ISCR ET E/OPTO} Üb DeT| TCHTSSO □ □ □ 7 7 1 3 5 jL 9097250 T O S H IB A b6C C D IS C R E T E /O PTO 07793 U' T -33 -2 9 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS.

J300B

Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
Contextual Info: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e

ec10qs04

Contextual Info: SBD Type：EC10QS04 EC10QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EC21QS04 EC21QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

EC10QS03L

Contextual Info: SBD Type：EC10QS03L EC10QS03L •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification

Contextual Info: SBD Type：EC10QS03L EC10QS03L •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification

Contextual Info: SBD Type：EC21QS04 EC21QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EC10QS09 EC10QS09 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EC10QS06 EC10QS06 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

an7178

Abstract: ltil AN 7178 atlr
Contextual Info: Panasonic AN 7178 f i n i - 5 . 7 W « J B ; f t « * i Ì t ì | l ! S / D u a l 5 .7 W A udio P ow er A m plifier Circuit A N 7 1 7 8 U , 5 .7 W 1 3 .2V, 4 0 W -tlcot — T 2 f , 1 03.6 x f u ' < - y ' r ~ :J i i l 2 h a > - i ' > 7 ^ ' i - t y f cn a y , c ?

marking x2b

Abstract: X2M sot223 X2N SCR X0205N X2B SCR thomson scr marking x2M
Contextual Info: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHiOiDOS X02xxxN SENSITIVE GATE SCR FEATURES = 1-4A • V drm = 200V to 800V ■ Low I g t < 200 jjA ■ It rm s DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended tor general purpose high

X0205

Contextual Info: X02 1.25 A sensitive gate SCR Features A • on-state rms current: 1.25 A ■ repetitive peak off-state voltage: 600 V and 800 V ■ G K gate triggering current: 50 and 200 µA A Applications ■ ■ ■ A G ground fault circuit interrupters A K K overvoltage crowbar protection in power