X2M ST Search Results

E2EL-X1R5F1-M1

Abstract: Data Sheet X2M E2EL-X2E1-DSL E2EL-X1R5F1-M1L E2EL-C2MF2-L E2EL-X1R5F1-M3L E2EL-C1R5F2-M3L E2ELC1R5F1M3 inductive proximity sensor E2EL-X1R5F2-M3
Contextual Info: F502-EN2-04.book Seite 99 Dienstag, 26. Juli 2005 5:48 17 High Frequency Inductive Proximity Sensor E2EL Increased response frequency for high speed applications • • • • Max 5 kHz, switching frequency M8 or dia 6.5 mm housing Brass or stainless steel housing

PU3226

Abstract: 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3226 PU3226 Silicon NPN Triple-Diffused Planar Type Power Amplifier Package Dimensions U nitlm m • Features • High D C c u rre n t gain Kfe and good lin earity • Low c o lle c to r -e m itte r sa tu ratio n v o lta g e (Vc£<Sao)

2SB596

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)

SC14CVM2.4FLN

Contextual Info: ISOCOPI COMPONENTS LTD 4SE D • MflflbSlQ 00Q03S1 2 ■ ISO " p 2 5 - 3 l Preliminary Data Sheet Solid State Relays - 4 Pin SIP Package ISOCOHI ISRT44080 / ISRT46080 / ISRT44160 / ISRT46160 ISRX44080 / ISRX46080 / ISRX44160 / ISRX46160 • Features • •

SF10J41

Contextual Info: SF10G41 A,SF10J41A TO SHIBA SF10G41A, SF10J41A T O SH IB A TH YR ISTO R SILICON D IFFUSED TYPE Unit in mm M E D IU M P O W E R CO N TRO L A PPLIC A TIO N S. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current

QXA2602

Abstract: CM1Y9777 TRIAC ACS 12 QXA2604 cm1y9775 X2M ST
Contextual Info: s Room thermostats with KNX communications 3 191 RDG100KN RDG160KN – For fan coil unit applications – For universal applications – For use with compressor in DX type equipment • • • • • • • • • • • • • • • • KNX bus communication S-mode and LTE mode

Contextual Info: TOSHIBA SM 12G45,SM 12J45,SM 12G45A,SM 12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45, SM12J45, SM12G45A, SM12J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • • Repetitive Peak Off-StateVoltage : Vj R]y[ = 400, 600V R.M.S On-State Current

Contextual Info: SBD Type：EC10QS09 EC10QS09 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EC10QS04 EC10QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EC21QS03L EC21QS03L •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification

c2497

Abstract: 2SC2497 2SC2497A 2SA1096 2SA1096A
Contextual Info: P o w e r T ra n s is to rs 2S C 2497, 2SC2497A 2SC2497, 2 S C 2 4 9 7 A S ilico n NPN E p ita xia l P la n a r Type P ackage D im ensions AF Pow er A m plifier C om plem entary P air w ith 2 S A 1 0 9 6 . 2S A 1096A timi : no ai­ • Features • High co llccto r-em itter voltage Vcso

EC10QS09

Contextual Info: SBD Type : EC10QS09 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

Contextual Info: SBD Type : EC21QS03L OUTLINE DRAWING FEATURES FEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel

Contextual Info: SBD Type : EC10QS03L OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

ic we 3 lz 01

Abstract: 2SD1729 SC-65
Contextual Info: Power Transistors 2SD1729 2SD 1729 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions H orizontal Deflection Output • F eatures • P a m p e r d iode built-in 15.5max. Unit I mm 13.5max. ll.Omax. 4.7max. ke-e 2.1 max. • M inim izes e x te r n a l c o m p o n e n t c o u n ts and sim plifies c irc u itry

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A tk 100 A p257
Contextual Info: Rower Transistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD1538, 2SD1538A U nit : mm 3.7 m ix. f—* • Features 6.5 max. • to w collector-eim itter saturation voltage Vceo.»

MC513

Abstract: RS-330 16V8 74HC245 led 7seg 43256 r06f ksp 36 93 74HC573 CB10
Contextual Info: JP2 VCC D[0.7] 1 2 3 /EA U4 U1 GND C1 21 1 GND 35 XT1 12MHz 22p C2 CLK 2 GND 12p 20 10 PRES2 14 15 16 17 P3.2 P3.3 P3.4 P3.5 X2L PA0 PA1 PA2 PA3 PA4 PA5 PA6 PA7 85 89 86 90 87 91 88 92 2 3 4 5 6 7 8 9 P1.0 P1.1 SCLK SRI STO /SLS P1.6 P1.7 12 44 1 KITCON-X

Contextual Info: SBD Type : EC10QS09 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

Contextual Info: SBD Type : EC21QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

Contextual Info: SBD Type : EC10QS06 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

Contextual Info: X02xxxN SENSITIVE GATE SCR FEATURES = 1-4A = 200V to 800V • Low I g t < 200 |j,A ■ It r m s ■ V d rm DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume

J300B

Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
Contextual Info: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e

6p1 tube

Abstract: EZ 542
Contextual Info: REV. |BB I c ” ’B ’ .353 .203 .165 .542 .293 [8.97] [5.16] [4 .19 ; [13.76] [7.44; .71] .703 .600 .703 .230 .240 .190 .205 .300 .167 [17.86] [15.24] [17.86] [5.84] [6 . I 0 ; [4.83] [5 .21 ; [7.62] [4.24] r-96] .96 L.96 ] .703 .553 .453 [17.86' [14.05'

ec10qs04

Contextual Info: SBD Type：EC10QS04 EC10QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings