X1001 Search Results

Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm May 2008 - Rev 30-May-08 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs

Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

XX1001-QK

Abstract: XX1001-QK-0L00 XX1001-QK-0L0T XX1001-QK-EV1 07MAR07
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

20DBL0629

Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

XX1001-QK

Abstract: XX1001-QK-EV1
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2009 - Rev 21-Mar-09 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

XX1001-QK

Abstract: XX1001-QK-0L00 XX1001-QK-0L0T XX1001-QK-EV1
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm October 2006 - Rev 04-Oct-06 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description

XX1001-BD-EV1

Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

2716 eprom manual programming by switch

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

k1404

Abstract: transistor k1404 remote control tx-2b TX-2B RX-2B rx 2b DML4 DML4 Calibration tx-2b equivalent RX-2B TX-2B RX-2B, TX-2B
Contextual Info: Preliminary Data Sheet November 2000 T9000 ISDN Network Termination Node NTN Device 1 Description • The T9000 is an ISDN network termination node device that is highly integrated and provides a lowcost solution to support the following: General-purpose I/O (GPIO) ports with interrupt

Contextual Info: C8051F97x Low Power Capacitive Sensing MCU with up to 32 kB of Flash Low Power Consumption - 200 µA/MHz in active mode 24.5 MHz clock - 2 µs wakeup time - 55 nA sleep mode with brownout detector - 280 nA sleep mode with LFO - 600 nA sleep mode with external crystal

Contextual Info: in te i 8XC196KD/8XC196KD20 COMMERCIAL CHMOS MICROCONTROLLER 87C196KD—32 Kbytes of On-Chip OTPROM • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16 MHz and 20 MHz Available 1000 Byte Register RAM Register-to-Register Architecture 28 Interrupt Sources/16 Vectors

M80C196KC

Contextual Info: ^ iH @ p y T ^ E W a E W in te i M87C196KD MILITARY CHMOS MICROCONTROLLER M87C196KD—32 Kbytes of On-Chip EPROM 16 MHz Available Full Duplex Serial Port 32 KBytes On-Chip EPROM High Speed I/O Subsystem 1000 Byte Register RAM 16-Bit Timer Register-to-Register Architecture

RAMDE

Abstract: IN5820 OP44 74als541 AB-097 DDC101 fdrd dxo 1100 C16BARD m31 crt
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

A8563

Abstract: IXF1002 IXF440 IXP1200 IXP1250 A-8629 X0010 A857
Contextual Info: Intel IXP1250 Network Processor Datasheet Product Features The Intel® IXP1250 Network Processor delivers high-performance processing power and flexibility to a wide variety of LAN and telecommunications products. Distinguishing features of the IXP1250 are the performance of ASIC

DTB 0124 DP

Abstract: 4825B CD0001 0549F 8342H F2MC-16 F2MC-16F PS8713
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00101-2E F2MC-16F 16-BIT MICROCONTROLLER MB90200 SERIES PROGRAMMING MANUAL PREFACE • Objectives and intended readership Fujitsu’s MB90200 series is a lineup of 16-bit single-chip microcontrollers which can be provided

PE43701

Abstract: 24 leads qfn 5x5 9380 32QFN PE43703 X1001001
Contextual Info: Product Specification PE43703 50 Ω RF Digital Attenuator 7-bit, 31.75 dB, DC-6.0 GHz, VssEXT option Product Description The PE43703 is a HaRP -enhanced, high linearity, 7-bit RF Digital Step Attenuator DSA . This highly versatile DSA covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB, or 1.0

Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91C025FG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. Especially, take care below cautions.

HT1642

Abstract: 1281 reset ic various PWM techniques HT1647 ht164
Contextual Info: HT1647 4-Level Gray Scale 64x 16 LCD Controller for I/O µ C Features • • • • • • • • • • • • • • • Operating voltage: 2.7V~5.2V Built-in 32kHz RC oscillator External 32.768kHz crystal oscillator or 32kHz frequency source input

AM9513

Abstract: BCD DIVISION e purse AM9513CC AM9513DM AM9513 counter bft 5f g1
Contextual Info: A m 9 5 1 3 y m System T im ing C o n tro lle r ^ Advanced M icro Devices H g a w 'W A dvanced MOS/LSI I DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Five independent 16-bit counters The Am9513 System Timing Controller is an LSI circuit designed to service many types of courting, sequencing and timing appli­

Contextual Info: HD 61830 -LCTC LCD Timing Controller P in A rra n g e m e n t D escrip tio n The HD61830 is a dot m atrix liquid crystal graphic display controller LSI th a t stores th e display d a ta se n t from an 8-bit m icrocontrol­ ler in th e external RAM to g e n e ra te dot

Contextual Info: User’s Manual µPD780862 Subseries 8-Bit Single-Chip Microcontrollers µPD780861 µPD780862 µPD78F0862 µPD78F0862A µPD780861 A µPD780862(A) µPD78F0862(A) µPD78F0862A(A) µPD780861(A1) µPD780862(A1) µPD78F0862A(A1) µPD780861(A2) µPD780862(A2) µPD78F0862A(A2)