WSI ALGORITHM D Search Results

WSI PSD

Abstract: 411A1 magicpro III psd3xx 411A2 magicPRO PSD211R PSD412A2-C-70J psd4xx 12j FAIRCHILD
Contextual Info: Document: WSI-1021 June 26, 1998 Subject: Process Change Notification Device Types: All PSD4XX Family Devices except 413 & 403 Including All PSD & ZPSD Versions Including Both 2.7 Volt and 5.0 Volt Versions Including All Speeds, Packages, and Temperature Ranges

Flash EEPROM card

Abstract: 68HC11 80C251 80C31 PSD813F1 PSD813F2 PSD813F3 PSD813F4 PSD813F5
Contextual Info: FLASH PSD MCU Peripherals Return to Main Menu What if you could. Speed up design time by 2-3 weeks? Program your entire system in only 7-seconds? Eliminate 6-square inches of board space? Reduce power consumption by 93%? Cure assembly flow headaches with JTAG first-time

free circuit Dvd eprom programmer

Abstract: EEPROM COPIER circuit INTEL END OF LIFE 80C196 32 pin eprom to eprom copier circuit mc 68000 microprocessor 68hc11 eeprom double byte write 80C198 memory mapping of motorola 68HC11 Fairchild presentation intel 80c196 microcontroller motor
Contextual Info: DECODE PLD E2PROM ISP JTAG SCRATCH PAD ZPLD INPUT BUS LOADER SRAM GENERAL PURPOSE CPLD with MicroCells SECURITY FEATURE PMU I/O PORT I/O PORT ZERO POWER FLASH I/O PORT PAGE LOGIC I/O PORT MCU MCU Address/Data/Control Bus MCU INTERFACE Your

  Presentation #3

WSI eprom Programming algorithm

Contextual Info: ^ALE W AFFR INTEGRATION 99D 0 0 136 DT-Í/6-/3-Z5 WS57C43B ADVANCE INFORMATION WAFER WAFERSCALE INTEGRATION, INC 4K X 8 CMOS PROM SCALE KEY FEATURES Low Power Consumption — 300 mW Active Power 20 MHz — Up to 200 mA Fast Programming • Available in 300 Mil Dip

WSI PEP300 PSD3XX

Abstract: WSI PSD 32 pin eprom to eprom copier circuit wsi magicpro ii ALL07 Motorola intel 80c198 PWM AC MOTOR CONTROl psd5xx 29 pt 8521 philips WS6000C Magic*PRO III
Contextual Info: Programmable Peripherals for Microcontrollers  36' 3UR 3URGGXF XFWW 9LH 9LHZ ZHU RRQQ &&'' 1997, DKR, Rev. 2 1 AT A GLANCE A WSI Overview 36' 3UR 3URGGXF XFWW 9LH 9LHZ ZHU RRQQ &&'' 1996 • 1995 • • 1994 • PSD Sales 1993 • • Founded in 1983

WSI PSD 813

Abstract: free circuit Dvd eprom programmer intel 80c196 microcontroller 80c251 AD0-AD15 ZPSD211R ZPSD813F psd4xx psd5xx ra 8620
Contextual Info: PSD MCU Peripherals Return to Main Menu What is a ZPSD and why should I use It? 1 C1 68H A Zero-Power Programmable System Device ZPSD is a support chip used with low-cost microcontrollers (MCU) in embedded control applications. PSDXF 8X 31 80C PSDXF 8X 11

Waferscale Integration

Abstract: WS57C49B-35 BIPOLAR PROM PROGRAMMING SPECIFICATION WSI algorithm D WSI Programming algorithm WS57C49B
Contextual Info: 9539690 WAFER SCALE IN T E G R A T IO N 99D 00144 D T - V é '/ 3 '2 5 WS57C49B 8K x 8 CMOS PROM SCALE KEY FEATURES 35 ns Low Power Consumption — 300 mW Active Power 20 MHz — Fast Programming Up to 200 mA Available in 300 Mil Dip GENERAL DESCRIPTION

Contextual Info: WS57C45 MILITARY 2 K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — 35 ns Setup — 15 ns Clock to Output • Low Power Consumption • Fast Programming • Programmable Synchronous or Asynchronous Output Enable • DESC SMD Nos. 5962-88735/5962-87529

IR RECEIVER TUTORIAL

Abstract: T28C256 8031 intel 8031 MICROCONTROLLER 80c31 code manual WSI Cross Reference A128C256 8031 MICROCONTROLLER interfacing to ROM intel 8031 power verilog code for implementation of eeprom
Contextual Info: PSD813F1/ 80C31 Design Tutorial Application Note 057 By Dan Harris and Mark Rootz February, 1999 47280 Kato Road, Fremont, CA 94538 Telephone: 510 -656-5400 (800) TEAM-WSI (832-6974) Web Site: http://waferscale.com E-mail: info@wsipsd.com Return to Main Menu

AM27S45

Abstract: smd marking a7 smd a10 smd marking A8 CY7C245 smd a7 smd transistor a4 smd transistor A7 SMD a7 Transistor SMD A8
Contextual Info: WS57C45 MILITARY 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 • Pin Compatible with AM27S45 and — 35 ns Setup — 15 ns Clock to Output CY7C245 • Immune to Latch-UP • Low Power Consumption

A12 marking

Contextual Info: WS57C71C MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM KEY FEATURES • Immune to Latch-UP • Ultra-Fast Access Time — Up to 200 mA — 45 ns • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000V • Available in 300 and 600 Mil DIP

Contextual Info: WS57C128FB MILITARY HIGH SPEED 16K x 8 CMOS EPROM KEY FEATURES • Ultra-Fast Access Time • Standard EPROM Pinout — 45 ns • Low Power Consumption »DIP and Surface Mount Packaging Available • EPI Processing — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION

Contextual Info: "Sfcdâêft&ëL WAFER S CM. E INT EGR ATION =H DE^j TSBTbTQ 000021Û 7 | ~ T -V¿-/.?-2<} WS27C256F WAFERSCALE INTEGRATION, INC. PRELIMINARY COMMERCIAL 32K x 8 CMOS EPROM KEY FEATURES Fast Access Time EPI Processing — — 90 ns Low Power Consumption —

smd a10

Abstract: diode MARKING A9 SMD A8 smd diode A4 WS57C256F-55 smd marking A8 smd transistor A6 A11 smd SMD A6 SMD a7 Transistor
Contextual Info: WS57C256F MILITARY HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is

Contextual Info: = = = — —' — — m S4E » — oooia^Q 203 • iiiia f WS57C256F WAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • EPI Processing • Fast Access Time — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063

57c43b-35

Abstract: 57C43B ajo3
Contextual Info: WAFER SCALE INTEGRATION V iU 31E D Oi ci 5 3 eJkl1D ODOOSIM □ EllilAF ijJ j_f _ W S57C 43B q ^ -p WAFERSCALE IN TEGRATION, INC. H IG H S P E E D 4 K x 8 C M O S P R O M /R P R O M KEY FEATURES • Low Power Consumption

SAMSUNG NAND Flash Qualification Report

Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Contextual Info: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.

cerdip z PACKAGE

Abstract: A4 marking diode dip N82S191 WS57C191C WS57C191C-35DMB WS57C191C-45DMB WS57C191C-55DMB WS57C291C
Contextual Info: WS57C191C/291C MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 35 ns — t CS = 20 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

MICRONAS uac

Abstract: UAC 3556B sub-woofer with 5.1 amp circuit diagram subwoofer preamp diagram subwoofer PREAMP circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 40 led VU-METER UAC 3554B UAC 3556B equivalent 5v subwoofer amplifier
Contextual Info: ADVANCE INFORMATION MICRONAS Edition Aug. 2, 2001 6251-544-1AI UAC 3554B, UAC 3556B Universal Serial Bus USB Codecs MICRONAS UAC 3554B, UAC 3556B ADVANCE INFORMATION Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 7 7 7 7 7 7 7 7 7 7 7 8

27C010L

Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
Contextual Info: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

smd A9

Abstract: SMD 6 PIN A4 marking smd 5 pin marking a9 SMD T1 IS 5 Pin Bipolar PROM programming smd marking a7 smd a10 ws57c43 smd a7 smd diode A4
Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: WAFER SCALE INTEGRATION ^ DE I TSBTlnTG □□□□Ibfc. 3 § -§ J T b WS57C43B WAFERSCALE INTEGRA HON, INC. PRELIMINARY HIGH SPEED 4K x 8 CMOS RPROM i KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with AM27S43 and N82S321 Bipolar PROMs • Immune to Latch-Up

intermetall

Abstract: 3540B micronas 5.1 audio processor
Contextual Info: PRELIMINARY DATA SHEET MICRONAS INTERMETALL CAP 3540B, CAP 3541B Car Audio Processor Hardware MICRONAS Edition May 22, 1997 6251-434-1PD CAP 3540B, CAP 3541B PRELIMINARY DATA SHEET Contents Page Section Title 3 3 1. 1.1. Introduction Features 4 4 4 4 4 6 7

MIL-STD-883C

Abstract: smd a10 smd marking a7 smd marking A8 WS57C49C WS57C49C-35 WS57C49C-35CMB WS57C49C-35DMB WS57C49C-35TMB WS57C49C-45
Contextual Info: WS57C49C MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V