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Catalog Datasheet	Type	Document Tags	PDF
KJh transistor Abstract: WPD431 Contextual Info: NEC OCT 2 « 1992 ELECTRON DEVICE PRELIMINARY DAT* SHEET MOS INTEGRATED C IR C U IT /¿PD43 1 0 0 2 128K X 9 BIT CMOS STATIC RAM DESCRIPTION The ¿¡PD431002 is a high speed, low power, 128K words by 9 bits CMOS static RAM fabricated with advanced silicon-gate CMOS technology. The «PD431002 is a low standby power device using	OCR Scan	uPD431002 PD431002 uPD431002cCDR KJh transistor WPD431	PDF
Contextual Info: SEC ELECTRON DEVICE / / / PRELIMINARY DAT* SHEET MOS INTEGRATED CIRCUIT Ai PD431000B 1M-BIT CMOS STATIC RAM DESCRIPTION The /¿PD431000B is a high speed, low power, 128K words by 8 bits OIOS static RAM fabricated with advanced silicon-gate CMOS technology. The «PD431000B is a low standby power device using	OCR Scan	PD431000B PD431000B	PDF

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KJh transistor

Abstract: WPD431
Contextual Info: NEC OCT 2 « 1992 ELECTRON DEVICE PRELIMINARY DAT* SHEET MOS INTEGRATED C IR C U IT /¿PD43 1 0 0 2 128K X 9 BIT CMOS STATIC RAM DESCRIPTION The ¿¡PD431002 is a high speed, low power, 128K words by 9 bits CMOS static RAM fabricated with advanced silicon-gate CMOS technology. The «PD431002 is a low standby power device using

OCR Scan

uPD431002 PD431002 uPD431002cCDR KJh transistor WPD431

PDF

Contextual Info: SEC ELECTRON DEVICE / / / PRELIMINARY DAT* SHEET MOS INTEGRATED CIRCUIT Ai PD431000B 1M-BIT CMOS STATIC RAM DESCRIPTION The /¿PD431000B is a high speed, low power, 128K words by 8 bits OIOS static RAM fabricated with advanced silicon-gate CMOS technology. The «PD431000B is a low standby power device using

OCR Scan

PD431000B PD431000B

PDF