WIRE MICROSTRIP LINE Search Results

BTS015

Abstract: IPC-2141A MT-094 Wire Microstrip Line stripline pcb Shielded Microstrip FR4 dielectric constant 4.6 Shielded Microstrip Line MECL handbook
Contextual Info: MT-094 TUTORIAL Microstrip and Stripline Design INTRODUCTION Much has been written about terminating PCB traces in their characteristic impedance, to avoid signal reflections. However, it may not be clear when transmission line techniques are appropriate.

Contextual Info: MTLP www.vishay.com Vishay Electro-Films Wire Bondable Thin Film Micro-Strip Transmission Line Resistor Arrays FEATURES • 50  micro-strip configuration • Wire bondable terminations • Alumina 99.6 % substrate; as-fired or polished APPLICATIONS • Test and measurement setups

ansi-y14.5m-1994

Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
Contextual Info: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

6647a

Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

thuraya

Abstract: merrimac Hybrid Couplers
Contextual Info: MERRIMAC OFFERS A DESIGN CHOICE OF “LUMPED ELEMENT”, “MICRO-STRIP” OR “STRIP-LINE” TECHNOLOGY DESIGN CONSIDERATIONS AFFECTING RELIABILITY At Merrimac, three design techniques are used to produce the transmission characteristics of most of our signal

Transistor motorola 513

Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Contextual Info: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed

XRF286

Abstract: XRF286S MRF286 MOTOROLA XRF286 47nj capacitor MRF286S MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS
Contextual Info: MOTOROLA Order this document from WISD RF Marketing SEMICONDUCTOR TECHNICAL DATA MRF286 MRF286S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE

369A-10

Abstract: C10 PH dale 2000 2x12 mallory capacitor 1500 mf
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

ferroxcube for ferrite beads

Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

sme50vb101m12x25l

Abstract: C10 PH wirewound resistor j10 NI-360
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

K 3569 7.G equivalent

Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

mrf284

Abstract: C10 PH
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

100B2R0BP

Abstract: MRF5S21090 dbc 4223 MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3
Contextual Info: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

MRF5S19090L

Abstract: MRF5S19090LR3 MRF5S19090LSR3
Contextual Info: MOTOROLA Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S19090L N–Channel Enhancement–Mode Lateral MOSFETs MRF5S19090LR3 MRF5S19090LSR3 Designed for PCN and PCS base station applications with frequencies up to

AN1955

Abstract: MRF5S19090LR3 MRF5S19090LSR3 336 motorola
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090LSR3

465B

Abstract: MRF21125 MRF21125S MRF21125SR3 100b1r
Contextual Info: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Contextual Info: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

transistor motorola 236

Abstract: 465B MRF21125 MRF21125S MRF21125SR3 j686
Contextual Info: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

vk200

Abstract: vk200 coil VK200-19/4B J121 power unit MRF314
Contextual Info: Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF314 . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

Contextual Info: /IT SCS-THOMSON SD1390 * 7 # . raoœoiiUKSïiBOWs RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS PRELIMINARY DATA • ■ . ■ • ■ 470 MHZ 24 VOLTS P o u t = 1.5 W WITH 13.0 dB MIN. GAIN CLASS A COMMON EMITTER POWER SATURATION 2.2 W MIN. P IN C O N N E C T IO N

j686

Contextual Info: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110