WF VQC 10 D A6 Search Results

Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR D S1220A B /A D 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 ' 24 1 Vcc • Data is automatically protected during power loss A6 • 23 1 A8 A5 1 3 22 1

1L43

Abstract: wf vqc 10 d a6 MH 7420 MSM8128-8S
Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> Inoe L3S337T 0GG123D 234 128K x 8 SHAM molate MSM8128-85/10/12 Issue 3.0 : October 1992 Semiconductor f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 02 GNO 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns

Contextual Info: MSC23B1321 D-xxBS2/DS2 98.11.9 OKI semiconductor MSC23B1321 D-xxBS2/DS2 1,048,576 Word By 32 Bit DYNAMIC RAM MODULE : FAST PAGE MODE GENERAL DESCRIPTION The Oki MSC23B1321 D-xxBS2/DS2 is a fully decoded, 1,048,576 word X 32 bit CMOS dynamic random access memory composed of two 16Mb(lMx16) DRAMs !n SOJ. The mounting of two DRAMs together

EE40 core

Abstract: schematic diagram cga to vga converter 464wp motorola optocoupler H7C4 WF VQE 11D uc3843a power source schematic BU508 TRANSISTOR equivalent cj TL431 transistor 277-CbRb
Contextual Info: Order this document MOTOROLA by A N I080/D SEM ICO N D UCTO R APPLICATION NOTE AN1080 External-Sync Power Supply with Universal Input Voltage Range for Monitors By S.K. Tong and K.T. Cheng A B STR A CT This paper describes the design of a low-cost 90 W flyback switching power supply for a multi-sync color

91000S-70

Abstract: HYM91000S60
Contextual Info: SIEMENS 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

Contextual Info: MSC23832B-XXBS16/DS16 98.11.16 OKI semiconductor MSC23832B-xxBS16/DS16 8t388,608 Word x 32-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE_ GENERAL DESCRIPTION The Oki MSC23832B-xxBS16/DS16 is a fully decoded,8,388,608 word x 32 bit CMOS dynamic

ADE-203-634C

Contextual Info: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634C Z Rev, 3.0 Feb. 21, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers

91000S-60

Abstract: siemens POWER SUPPLY KS 630 S 91000S-70 91000S-80 511000
Contextual Info: S IE M E N S 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time

xicor 2816A

Abstract: BR2816A-250 rohm suffix "N"
Contextual Info: itovim BR2816A 2K x 8 Bit Electrically Erasable PROM FEATURES • 2048 x 8 Bit 5V E2PROM ■ Single 5-Volt Supply ■ Fast Read Access Time: 250ns ■ TTL Level Byte Write: 10ms Max. ■ Internally Latched Address and Data in Write Cycle ■ Automatic Erase Before Write

MCM6288B

Abstract: wf vqc 10 d a6 MCM6290BP25 MCM6290BP20 MCM6288B-25 U/25/20/TN26/15/850/MCM6290BP25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6288B MCM6290B 16Kx4 Bit Static RAMs The MCM6288B and MCM6290B are 65,536 bit static random access memories organized as 16,384 words of 4 bits, fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks

bc6 csr

Abstract: CSR BC6 wf vqc 10 d a6 LC32256 LC32256P
Contextual Info: Ordering number : EN4700B CMOS LSI LC32256P-80 256 K 262144 words x 1 bit DRAM Fast Page Modem Overview The LC32256P is a CMOS dynamic RAM operating on a single 5 V power source and having a 262144 words x 1 bit configuration. Equipped with high speed and low

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Remove vendor CAGE number 50088. Add vendor, CAGE number 34335. Device type 01 not ava ilab le from approved source. Add device type 04. E d ito ria l changes throughout. Convert to m ilita ry drawing formate. Added case X.

Contextual Info: HM6288 Series 1 6 3 8 4 -w o rd X 4-b it High Speed CMOS S tatic RAM The Hitachi H M 6288 is a high speed 64k static RAM organized as 16-kword x 4-bit. It realizes high speed access time 2 5 /3 5 /4 5 ns and low power consumption, employing CMOS process

MC27C512

Abstract: NMC27C512AQ250 27C32 QM250 nmc27c512aq 27C128 27C16 27C256 27C64 EPROM NMC27C512AQ
Contextual Info: p r e l im i n a r y NMC27C512A 524,288-Bit 64k x 8 UV Erasable CMOS PROM General Description Features The NMC27C512A is a high-speed 512k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­

M38510

Contextual Info: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs

Contextual Info: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.

LC35645

Abstract: lc3664* sanyo DIP28 LC3564S LC3564SS LC3564ST ST-70 3301P lc3664 564S
Contextual Info: ig number: EN4794B □ LC3564S, SS, SM, ST-70/85/10 N0.4794B SAiYO i 6 4 K 8 1 9 2 w o r d s X 8 b it s S R A M Overview The LC3564S, LC3564SS, LC3564SMr and LC3564ST are asynchronous silicon gate CMOS static RAM s with an 8192-word X 8-bit organization. These SRAM s are full CMOS type

Nippon capacitors

Contextual Info: HB56UW473EJN Series, HB56UW465EJN Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-724A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW473EJN, HB56UW465EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

Contextual Info: A OS1743/DS1743P PRELIMINARY D S 1 7 4 3 /D S 1 7 4 3 P Y2KC Nonvolatile Timekeeping RAM PIN ASSIGNMENT • Integrated NV SRAM, real time dock, crystal, powertail control circuit and lithium energy source 28 VCC KC c 1 27 “1 WE A12 c 2 A7 c 3 26 □ CE2

X28256D

Abstract: xxww X28256EMB25 X28256DMB 60395 xicor B7649 D-10 5962-8764903 X28256DMB35 X28256DMB-25
Contextual Info: D IS TR IB U TIO N S TA TE M E N T A. Approved for public release; distribution is unlim ited. OESC FORM 193 MAY 86 1. SCOPE 1.1 Scope. T h is draw ing d e s c rib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in accordance w ith 1 .2 .1 o f M IL-STD-883, "P ro v is io n s f o r th e use o f MIL-STD-883 in c o n ju n c tio n w ith c o m p lia n t

LM317T vw

Abstract: A1015 equivalent LCD 16X4 mc68000 S-MOS SYSTEMS INC seD1352 MC68000 schematics
Contextual Info: S-MOS S Y S T E M S A Seiko Epson Affiliate SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,

wf vqc 10 d a6

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304word x 16-bit. They employ the most advanced CMOS technology for high performanceand low power,