WF MB 101 Search Results

WF VQE 13

Abstract: VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE21 wf vqe 23 VQE24 WF VQE 12 vqe 13
Contextual Info: FUNKAMATEUR - Bauelementeinformation Anzeigen VD/VT Koppler Vergleichslisten Optoelektronik Anzeigen, IR-Dioden, Fotodioden- und Transistoren, Koppler Lichtemitteranzeigen o Farbe WF rot rot grün grün rot rot grün grün grün grün rot rot rot grün grün

FMC16LX

Abstract: MB90F462 FMC-16LX MB90F387 MC-16LX MB90F4
Contextual Info: FUJITSU SEMICONDUCTOR ＣＯＮＴＲＯＬＬＥＲ ＭＡＮＵＡＬ XXXX-XXXX-XX-E F²MC-16 FAMILY 16-BIT MICROCONTROLLER An Additional Manual for the Softune Linkage Kit F²MC-16LX Standby Mode Transition Instruction Check FUJITSU LIMITED PREFACE •Objectives and Intended Readership

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

IRGB15B60K

Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGS15B60KD

Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Contextual Info: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: - PRELIMINARY - October 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4 4 5 D - 6 0 / 7 0 / 6 0 L / 7 0 L CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page M ode Dynamic RAM The Fujitsu M B814405D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

0805 size footprint

Abstract: WF MB 102
Contextual Info: Class 3 Y5V 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ Class 3 dielectric ∑ Four standard sizes ∑ High capacitance per unit volume ∑ Supplied in tape on reel ∑ For high frequency applications ∑ Ni-barrier with 100 % tin terminations.

WF MB 102

Abstract: CD110H
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITOR CD110H WF WF FEATURE : 85 5000 Life time:85 5000 hours High performance For general consumer and industrial electronic products application SPECIFICATIONS Performance Characteristics Item 6.3V.DC Rated Voltage Range 100V.DC

WF MB 101

Abstract: WF MB 102
Contextual Info: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications

Kp 1010

Contextual Info: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications

Altera hardcopy ASIC

Abstract: LF1152 FF1152 4SE360 4SE230
Contextual Info: Technology for Business HardCopy ASICs Electronic system designs are becoming more challenging, but the technology options available today to address this situation are limited. Standard-cell ASICs are too risky and expensive to design with, as reflected by the significant reduction seen recently in designs using ASICs

transistor SMD p95

Abstract: uPD703130 uPD703130GC-8EU
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD703130 V850E/MS2TM 32-BIT SINGLE-CHIP MICROCONTROLLER TM The µPD703130 is a member of the V850 Family control operations. of 32-bit single-chip microcontrollers designed for real-time These microcontrollers provide on-chip features, including a 32-bit CPU, RAM, interrupt

msm8128sxlmb

Abstract: JX-45
Contextual Info: MSM8128S/K/V/W/JX-45/55/70 Issue 1.0 : August 1989 1 2 8 K x 8 M o n o l i t h i c C M O S SRAT MSM8128S/K/V/W/JX ADVANCE PRODUCT INFORMATION 131,072 x 8 C M O S High Speed Static RAM Features Fast Access Times of 45,55,70 nS A SIC JEDEC 1Megabit Module Pinout

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

A109d

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik mikroelektronik DDR a211d B109D "halbleiterwerk frankfurt" VEB Kombinat zf filter VEB Kombinat halbleiterwerk
Contextual Info: Halbleiter-Bauelemente Semiconductors 1981 D ie vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der D D R gefertigten H albleiterbauelem ente. Dem Anw ender soll durch diese Übersicht die Auswahl d er jew eils in Frage kommenden

transistor SMD p95

Abstract: uPD703130 dvd D 5888 s uPD703130GC-8EU uPD703130GC-8EU-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: - PRELIMINARY Jun. 1995 Edition 2.0 P R O D U C T PR O FII F S H F F T • - FUJITSU M B 8 1 V4260S-60/-70 CMOS 256KX 16 BIT FAST PAGE MODE DYNAMIC RAM C M O S 262,144 x 16 bit Fast Page M ode Dynamic RAM The Fujitsu MB81V4260S is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304

CNY17GF

Abstract: CNY17G3
Contextual Info: Philip* Semiconductor* Product specification High-voltage op to co u p lers CNY17G/CNY17GF FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC

Contextual Info: - PRELIMINARY - April 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4405C-60/-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode D y na m ic RAM The Fujitsu M B814405C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304

DM110

Contextual Info: MDM11000T/V/G/J-10/12/15 Issue 1.0 July 1989 MDM11000-T/V/G/J 1Mx 1 Monolithic c m o s d r a m ADVANCE PRODUCT INFORMATION 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Pin Definition Package Type: T.'V'.'G'.'J' Row Access Times of 100/120/150 nS High density 300mil DIP Package

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden

SEMIKRON SKE

Abstract: sk 4f1 semikron ske 4 f 2 SK 4F1/10 ske4f1 SKE4F ske 2.5 SKE4F1/08 SK+4F1/06 SKE4F1/01
Contextual Info: 156 0 | SEMIKRCN INC ai3bt.?l 000103 3 1 | sem ikrd n T - 0 3 - J S Fast Recovery Rectifier Diodes Ifrm s maximum values for continuous operation V rsm V rrm 7A Ifav (sin. 180; Tamb = 45 °C) SKE2F1 SKE4F1 SKE4G1 1,2 A V trr = 0,2 [is trr = 0,4 (is 100 SKE 2 F 1/01