WE VQE 23 E Search Results
WE VQE 23 E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BUK856-400IZ
Abstract: DD30 T0220AB ignition coil IGBT CL-8A
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bbS3T31 BUK856-400IZ T0220AB DD30 ignition coil IGBT CL-8A | |
WE VQE 23 F
Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
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1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S | |
Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C, |
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1RG4BC30K-S S54SH | |
Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications: |
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SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 | |
UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
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64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D | |
4327
Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
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EN4327 LC36256ALL, AMLL-70/85/10/12 AMLL-70/85/10/12 LC36256ALL/AMLL 4327 LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85 | |
MG25N2YS1
Abstract: WE VQE 23 F
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MG25N2YS1 MG25N2YS1 WE VQE 23 F | |
Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data |
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X2804AM 512x8 X2804A MilStd-B83C | |
Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high |
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IRG4PH20K | |
LC35256A
Abstract: LC35256AM LC35256AS 5K4916
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S4916 5K4916 LC35256A, AM-70/85/10 LC35256A 0D1535E LC35256AM LC35256AS 5K4916 | |
FAIRCHILD 3904Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5 |
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MM74C912 FAIRCHILD 3904 | |
1.8 degree bipolar stepper motorContextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution |
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IXMS150 24-Pin 4bfib22b 1.8 degree bipolar stepper motor | |
RCD snubber
Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
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AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit | |
information applikation
Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
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Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction |
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LA201 LA202 | |
Contextual Info: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well |
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HIP6018B 12Vqc- AN9805. | |
circuit diagram of card lock system using ic 74ls
Abstract: T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603
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DP8460/DP8450 DP8460 Separator/DP8450 DP8464 P8460" L/F/51 circuit diagram of card lock system using ic 74ls T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603 | |
wf vqe 24 d
Abstract: tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E
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MIL-M-38510/227 MIL-M-38510, MIL-M-38510 MIL-M-38510. X2816A-45/XIC0R X2816A-35/XIC0R X2816A-30/XICOR X2816A-25/XIC0* IL-M-38510/227 wf vqe 24 d tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E | |
circuit diagram of card lock system using ic 74ls
Abstract: DP8460 DP645 248KS
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DP8460/DP8450 DP8460 Separator/DP8450 DP8464 ST506 DP8460" circuit diagram of card lock system using ic 74ls DP645 248KS | |
Contextual Info: HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well |
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HIP6018B HIP6018B 12Vqq. AN9805. | |
B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
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197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn | |
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
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SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 |