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    WE VQE 23 E Search Results

    WE VQE 23 E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK856-400IZ

    Abstract: DD30 T0220AB ignition coil IGBT CL-8A
    Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA


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    bbS3T31 BUK856-400IZ T0220AB DD30 ignition coil IGBT CL-8A PDF

    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


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    1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S PDF

    Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


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    1RG4BC30K-S S54SH PDF

    Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


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    SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 PDF

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


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    64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D PDF

    4327

    Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
    Contextual Info: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an


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    EN4327 LC36256ALL, AMLL-70/85/10/12 AMLL-70/85/10/12 LC36256ALL/AMLL 4327 LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85 PDF

    MG25N2YS1

    Abstract: WE VQE 23 F
    Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)


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    MG25N2YS1 MG25N2YS1 WE VQE 23 F PDF

    Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data


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    X2804AM 512x8 X2804A MilStd-B83C PDF

    Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high


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    IRG4PH20K PDF

    LC35256A

    Abstract: LC35256AM LC35256AS 5K4916
    Contextual Info: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products


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    S4916 5K4916 LC35256A, AM-70/85/10 LC35256A 0D1535E LC35256AM LC35256AS 5K4916 PDF

    FAIRCHILD 3904

    Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5


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    MM74C912 FAIRCHILD 3904 PDF

    KA-40W

    Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
    Contextual Info: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


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    LM391 0W-81Ì 0W-41Ì TL/H/7146-13 LM391N; b501124 KA-40W LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N PDF

    transistor RJH 30

    Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
    Contextual Info: N a tio n a l LM391 & Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity


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    LM391 LM391N; TL/H/7146-13 b50ii24 transistor RJH 30 LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA PDF

    1.8 degree bipolar stepper motor

    Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution


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    IXMS150 24-Pin 4bfib22b 1.8 degree bipolar stepper motor PDF

    RCD snubber

    Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
    Contextual Info: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster


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    AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit PDF

    information applikation

    Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
    Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK


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    PDF

    decoding technique nrz DIAGRAM

    Abstract: mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220
    Contextual Info: NATL S E H I C O N D -CUP/UO "âb M | t , s o i i a û d O b i a m 5 DP8460 Data Separator/DP8450 Data Synchronizer General Description The DP8460 Data Separator is designed for application in disk drive memory systems, and depending on system re­ quirements, may be located either in the drive or in the con­


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    DP8460 Separator/DP8450 DP6464 ST506 b5D112fl 0Gbl037 decoding technique nrz DIAGRAM mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220 PDF

    2N498

    Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
    Contextual Info: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,


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    0Q001BS MIL-S-19500/74E 2N497, 2N498, 2N656, 2N657 2N497S, 2N498S, 2N656S, 2N657S 2N498 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


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    PDF

    Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


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    LA201 LA202 PDF

    Contextual Info: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well


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    HIP6018B 12Vqc- AN9805. PDF

    Contextual Info: interrii HIP6020 D ata S h e e t F e b ru a ry 1999 The HIP6020 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC integrates two PWM controllers and two linear controllers, as


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    HIP6020 HIP6020 28-pin 12VDC. AN9836. PDF

    circuit diagram of card lock system using ic 74ls

    Abstract: T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603
    Contextual Info: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description Th e DP8460 Data Separator is designed for application in disk drive memory system s, and depending on system re­ quirem ents, m ay be located either in the drive or in the con­


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    DP8460/DP8450 DP8460 Separator/DP8450 DP8464 P8460" L/F/51 circuit diagram of card lock system using ic 74ls T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603 PDF

    m5m410092

    Contextual Info: Preliminary Rev. 0.95 3D-RAM M5M410092B ELECTRONIC DEVICE GROUP Overview of 3D-RAM and Its Functional Blocks Introduction • Flexible dual Video Buffer supporting 76-Hz CRT refresh One of the traditional bottlenecks of 3D graphics hardware has been the rate at which pixels can be


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    M5M410092B) 76-Hz 40x16 14-ns ba41fl25 DD33770 m5m410092 PDF