WE VQE 23 E Search Results

BUK856-400IZ

Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA

WE VQE 23 F

Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

4327

Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
Contextual Info: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an

MG25N2YS1

Abstract: WE VQE 23 F
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)

Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

LC35256A

Abstract: LC35256AM LC35256AS 5K4916
Contextual Info: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products

FAIRCHILD 3904

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5

1.8 degree bipolar stepper motor

Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
Contextual Info: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

Contextual Info: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well

circuit diagram of card lock system using ic 74ls

Abstract: T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603
Contextual Info: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description Th e DP8460 Data Separator is designed for application in disk drive memory system s, and depending on system re­ quirem ents, m ay be located either in the drive or in the con­

wf vqe 24 d

Abstract: tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E
Contextual Info: 1 MIL-M-38510/227 27 MARCH 1987 M IL IT A R Y S P E C IF IC A T IO N M IC R O C IR C U IT S , D I G I T A L , NMOS, 16,384 B I T , E L E C T R IC A L L L Y E R A S A B L E , PROGRAMMABLE READ-ONLY MEMORY E E P R O M , MONOLITHIC S IL IC O N T h is s p e c i f i c a t i o n is

circuit diagram of card lock system using ic 74ls

Abstract: DP8460 DP645 248KS
Contextual Info: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description frequency. After lock-on, with soft sectored disks, the MISS­ ING CLOCK DETECTED output indicates when a missing clock in an address mark field occurs so the controller can

Contextual Info: HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.