WE 100Y Search Results

7400AS

Contextual Info: Control & Measurement PRODUCT Catalogue www.trumeter.com 03 Dear Customer, It is with great pleasure and pride that I write this introduction to our brand new product catalogue. This is the best catalogue that we have ever produced and contains exciting new products, as well as all the core products that

2316 rom

Abstract: 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
Contextual Info: MV23SC16 _ ADVANCE INFORMATION C M O S Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect this performance data to

EQUIVALENT TIC 160D

Abstract: MHI-002 MM5311 equivalent transistor bf 175 LM5522 DM7441A lm1514 LH0032
Contextual Info: m Edge Index by Product Family Here is the new INTERFACE catalog from National Semiconductor Corporation. It contains complete information on all of National's INTERFACE products whether they be Linear, Digital, or MOS. It is the first such catalog in the industry and we hope it becomes your most im portant INTERFACE guide.

WE 100Y

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical)

Contextual Info: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns

Contextual Info: ADVANCE INFORMATION CY14B101L 1-Mbit 128K x 8 nvSRAM Features • Commercial and Industrial Temperature • SOIC and SSOP Packages • 25 ns, 35 ns, and 45 ns Access Times • “Hands-off” Automatic STORE on Power-down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is

Contextual Info: ADVANCE INFORMATION CY22E016L 16-Kbit 2K x 8 nvSRAM Features • SOIC Package • RoHS Compliance • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is

Contextual Info: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features • SOIC Package • RoHS Compliance • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is

29c51002

Contextual Info: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt

KB101

Contextual Info: ADVANCE INFORMATION CY14E064L 64-Kbit 8K x 8 nvSRAM Features • SOIC Package • 25 ns, 35 ns, 45 ns and 55 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is

Contextual Info: ADVANCE INFORMATION CY14B256L 256-Kbit 32K x 8 nvSRAM Features • Commercial and Industrial Temperature • SOIC and SSOP Packages • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is

Contextual Info: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.

Contextual Info: CY14E064L PRELIMINARY 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the

block diagram for automatic room power control

Abstract: CY14E256L CY14E256L-SZ25XCT CY14E256L-SZ45XCT
Contextual Info: CY14E256L PRELIMINARY 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, Hardware or Autostore® on

CY14E256L

Abstract: CY14E256L-SZ25XCT CY14E256L-SZ45XCT
Contextual Info: CY14E256L PRELIMINARY 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, Hardware or Autostore® on

sram pull down mismatch

Contextual Info: ADVANCE INFORMATION CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times,

Contextual Info: ADVANCE INFORMATION CY14E064L 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns, 35ns, and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the

Contextual Info: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is

Contextual Info: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,

bq4845

Abstract: bq4845Y DT-26
Contextual Info: bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode

bq4845

Abstract: bq4845Y DT-26
Contextual Info: bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode

CY22E016L

Abstract: CY22E016L-SZ25XCT CY22E016L-SZ35XCT CY22E016L-SZ35XIT BUT14
Contextual Info: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,

Contextual Info: PRELIMINARY SHARP PRODUCT PREVIEW Rev. 1.4 LH28F002SCH-L 2-MBIT 256 KB x 8 SmartVoltage Flash MEMORY SmartVoltage Technology — 2.7V(Read-Only), 3.3V or 5V Vcc — 3.3V, 5V or 12V VPP High-Performance — 85 ns or 120 ns Read Access Time Enhanced Automated Suspend Options

bq4845

Abstract: bq4845Y DT-26
Contextual Info: bq4845/bq4845Y Parallel RTC With CPU Supervisor Features General Description ➤ Real-Time Clock counts seconds through years in BCD format The bq4845 Real-Time Clock is a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, and a CPU supervisor in a 28-pin SOIC or DIP. The