WB1 U Search Results

MARKING WB1

Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
Contextual Info: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-

delay timer circuit diagram

Abstract: A3800 LS7210
Contextual Info: LSI/CSI UL LS7210 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 516 271-0400 FAX (516) 271-0405 A3800 PROGRAMMABLE DIGITAL DELAY TIMER February 1998 PIN ASSIGNMENT - TOP VIEW 14 V SS (+V) A 2 13 OUT 3 12 WB0 11 WB1 TRIGGER LS7210

delay timer circuit diagram

Abstract: LS7210 diode wb3 digital delay on delay timer circuit diagram programmable delay A3800 LS7210-S
Contextual Info: LSI/CSI UL LS7210 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 PROGRAMMABLE DIGITAL DELAY TIMER February 1998 PIN ASSIGNMENT - TOP VIEW 14 V SS (+V) A 2 13 OUT 3 12 WB0 11 WB1 TRIGGER LS7210

A3800

Abstract: LS7211 LS7212
Contextual Info: LSI/CSI UL LS7211-7212 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 516 271-0400 FAX (516) 271-0405 PROGRAMMABLE DIGITAL DELAY TIMER A3800 June 1997 1 18 TRIG B 2 17 WB0 V DD (+V) 3 16 WB1 RC/CLOCK 4 15 WB2 RCS/CLKS 5 14 WB3 6

A3800

Abstract: LS7211 LS7212 LS7211-7212
Contextual Info: LSI/CSI UL LS7211-7212 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 PROGRAMMABLE DIGITAL DELAY TIMER 1 18 TRIG B 2 17 WB0 V DD (+V) 3 16 WB1 15 WB2 14 WB3 6 13 WB4 7 12 WB5 V SS (-V) 8 11

Contextual Info: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —L X R 3 8 1 6 GH WB1 5 0 010.00 1100.394] 5.20 [0 .2 0 5 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C 7,00 [0 .2 7 6 ] PARAMETER 1 2 ,0 0 PEAK WAVELENGTH [ 0 ,4 7 2 ] lf= 2 0 m A TYP MAX 565 GREEN 2 ,2/ 2.0

Contextual Info: APPLICATION NOTES APPLICATION NOTE 006 - WRAPPED CHIP DEVICE MOUNTING INSTRUCTIONS This line of microwave attenuators is designed for surface mount and wrap-around grounding applications. The W1 has a platinum gold w rap­ around ground with full back metallization and platinum gold input/output terminations. The WB1 has a platinum gold wrap-around ground and

Contextual Info: LSI/CSI UL LS7211-7212 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 November 2003 PROGRAMMABLE DIGITAL DELAY TIMER 1 18 TRIG B 2 17 WB0 V DD (+V) 3 16 WB1 15 WB2 14 WB3 6 13 WB4 7 12 WB5 V SS (-V)

076s

Contextual Info: 4 3 2 1 PRODUCTION RELEASE SPECIFICATIONS DC TD 12,4 GHz V S W R MAX _ 1,05+,015(f) P D V E R _ Corrected Port Nunber A. Gagne # DF HEAT SINK FINS MAY V A R Y WITH LOTS T YPE N PLUG INTERFACE PER MIL-STD-348 ELECTRICAL FREQUENCY RANGE WTEBPBET IW WB1 Y143-I9

Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-W ORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary P IN C O N F IG U R A T IO N T h is d o c u m e n t is a p re lim in a ry T a rg e t S p ec, and so m e o f th e co n te n ts are

AS09

Abstract: M5M4V16169TP-10 1024KX16
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 0.4 M5M4V16169TP-10,-12,-15,-20 16MCDRAM:1£M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

TS05XXW3

Abstract: TS0500 marking code wb1 TS05XX ts0506 TS0507 EMC TS-050
Contextual Info: ATTENUATORS THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film Impedance: 50 Q element on an alumina ceramic substrate with solderable terminals Operating Temperature: -55°C to +150°C

diode wb1

Contextual Info: HR High Reliability and Space Level Product Working Reference Sheet for Quotations LeadTime Chart, Sample Required Reference Table, Testing Procedures EMC High Reliability and S-level products are being offered with standardized lead-times. Use Table I below.

1kx16

Abstract: diode wb1 SCR table TK 69 TSOP
Contextual Info: MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M 1M-WORD BY 16-BIT CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION

TK 69 TSOP

Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

ot409

Abstract: AS3A 70P3S-M
Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 D T P /R T - 7 r 8 ,- 1 0 ,-1 5 16MCDRAM:16M 1 M-WORD BY 16-BIT CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: SUS MTVA Therm opad Tcchuologi/ E M C Technology's MTVA Thermopads are microwave absorbtive attenuators which offer a smaller physical size with increased frequency range. The series operates D C to 18 GHz. The MTVA version o f the Thermopad also offers wire bondable terminals for use with alternative high

m5m4v4169

Abstract: M5M4V4169CRT-10 256K-WORD M5M4V4169TP 70P3S-M 256-kword 1-OF-128 1kx16
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM PIN CONFIGURATION (TOP VIEW) Preliminary This document is a preliminary Target Spec. and some of the contents are

Contextual Info: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V4169TP is a 4 M - b it Cached DRAW which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1024-w o rd by 1 6 - bit static

mitsubishi cdram

Abstract: M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P -1 0 ,-1 2 ,-1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M 5 M 4 V 1 6 1 6 9 T P is a 1 6 M -b it Cached DRAM which integrates input registers, a 1 0 4 8 5 7 6 - w ord by 1 6 - bit

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024

TS03XXW3

Contextual Info: Features • Substrate - A lum ina • P ow er R ating - 0 .1 to 2 W atts • Frequency R ange D C to 18 GHz • Tape and Reel P ackaging A vailable • V SW R under 1.50:1 • V ariety o f Chip Sizes • A ttenuation Values fro m 1 to 20 dB in 1 dB increm ents; consu lt the fa cto ry

LS7215 LS7216

Contextual Info: LSI/CSI UL LS7215 LS7216 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 PROGRAMMABLE DIGITAL DELAY TIMER A 1 1 B 1 1 MODE One-Shot (OS) Delayed Operate (DO) Delayed Release (DR) Dual Delay (DD)