WB1 U Search Results

MARKING WB1

Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
Contextual Info: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-

Contextual Info: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —L X R 3 8 1 6 GH WB1 5 0 010.00 1100.394] 5.20 [0 .2 0 5 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C 7,00 [0 .2 7 6 ] PARAMETER 1 2 ,0 0 PEAK WAVELENGTH [ 0 ,4 7 2 ] lf= 2 0 m A TYP MAX 565 GREEN 2 ,2/ 2.0

076s

Contextual Info: 4 3 2 1 PRODUCTION RELEASE SPECIFICATIONS DC TD 12,4 GHz V S W R MAX _ 1,05+,015(f) P D V E R _ Corrected Port Nunber A. Gagne # DF HEAT SINK FINS MAY V A R Y WITH LOTS T YPE N PLUG INTERFACE PER MIL-STD-348 ELECTRICAL FREQUENCY RANGE WTEBPBET IW WB1 Y143-I9

diode wb1

Contextual Info: HR High Reliability and Space Level Product Working Reference Sheet for Quotations LeadTime Chart, Sample Required Reference Table, Testing Procedures EMC High Reliability and S-level products are being offered with standardized lead-times. Use Table I below.

1kx16

Abstract: diode wb1 SCR table TK 69 TSOP
Contextual Info: MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M 1M-WORD BY 16-BIT CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION

TK 69 TSOP

Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

LS7215 LS7216

Contextual Info: LSI/CSI UL LS7215 LS7216 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 PROGRAMMABLE DIGITAL DELAY TIMER A 1 1 B 1 1 MODE One-Shot (OS) Delayed Operate (DO) Delayed Release (DR) Dual Delay (DD)

MPT57481

Abstract: TC1 D80 11 SGLS099
Contextual Info: MPT57481 240-CHANNEL 61-BIT SOURCE DRIVER FOR COLOR TFT LCDS SGLS099 – MARCH 1997 D D D D D D D D D D 436 Terminal 70-mm Tab Assembly Selection Of Start Driver Input From Right Or Left By L/R Function CMOS Technology 6-Bit x 3 RGB Color Data Inputs 64-Gray-Scale Sub-Pixel Outputs

550 wa2

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SMD SPECIFICATION 型号:PLCC6MW6C-3C 1Features/特 征： l Emitting Color/发光颜色： White /白色 l Lens Type/封装特性：Yellow Diffused/黄色散射 l Device Outline/外形特征：5.5x5.0×1.95 （unit:mm）

Contextual Info: Weller Magna-Lite Butane Table Top Torch Product Details Catalog No. UPC Code Self Igniting Equivalent Wattage Run Time Temperature Range Supplied Tip s ML200 037103212290 Yes Packaging Peg Hook/Retail Packaging 550536.pdf ML200.pdf N/A 25 min. 2400° F N/A

Contextual Info: Weller Pyropen Jr Self-igniting Cordless Butane Soldering Iron Product Details Catalog No. WSTA6 UPC Code 037103146571 Self Igniting Yes Equivalent 15 W - 60 W Wattage Run Time 60 min. Temperature 392° F - 932° F Range Supplied WPT01, WHC0152 Tip s Packaging Peg Hook/Retail Packaging

Contextual Info: Weller Weller /Portasol® Super-pro Self-igniting Cordless Butane Soldering Iron Product Details Catalog No. PSI100C UPC Code 037103127174 Self Igniting Yes Equivalent 125 W Wattage Run Time 120 min. Temperature 1076° F Range Supplied PSI7 Tip s Packaging Peg Hook/Retail Packaging

VIPer 32

Abstract: TO272
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Weller Pyropen Professional Self-igniting Cordless Butane Soldering Iron Product Details Catalog No. WPA2 UPC Code 037103590435 Self Igniting Yes Equivalent 25 W - 60 W Wattage Run Time 180 min. Temperature 482° F - 932° F Range Supplied WPT2, WHC51 Tip s

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

TO-270-2

Contextual Info: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

PLCC2835-W6-1W

Contextual Info: Hebei I.T. Shanghai Co., Ltd SMD SPECIFICATION Part No./型号 PLCC2835-W6-1W 1Features/特 征： z Emitting Color/发光颜色：White/白色 z Lens Type/封装特性：Yellow Diffused/黄色散射 z Device Outline/外形特征：3.5x2.8×0.8（unit:mm）

MRF9045MBR1

Abstract: MRF9045MR1 6020G
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF3-50

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: 4 2 3 PRODUCTION RELEASE SPECIFICATIONS FREQ UENCY VSW R # DF HEAT SINK FINS MAY VARY WITH LDTS TYPE N PLUG INTERFACE PER M IL-STD-348 ELEC TR IC A L MAX _ 1,05+,015(f) POWER_ 5 W ATTS (AVG ) 0.5 KILO W ATTS (PEAK ) DERATED L IN E R L Y FROM 1007.

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

93F2975

Abstract: transistor WB1
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies