WAVELENGHT 940 NM Search Results

Contextual Info: LED nm Chart Peak Wavelenght Chip Material Typical Forward Voltage @ 20mA Radiation Color 940 G q AIAs 1.2 Infrared 880 GaAIAs/GaAs 1.3 Infrared 850 GaAIAs 2.0 Infrared 830 G q AIAs 1.8 Infrared 697 GaP 2.0 Deep Red 660 G q AIAs 1.8 Ultra Red 650 GaAsP 1.7

SML12R3KIR941T-TR

Abstract: DSTR0243 SML12R3 WAVELENGHT 940 NM
Contextual Info: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com SML12R3KIR941T-TR Red/Infrared Surface Mount LED 3.2 x2.7 ×1.85 mm Chip LED 120° viewing angle

Contextual Info: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com SML10IR941T-TR Infrared Surface Mount LED 3.2 x2.7 ×1.85 mm Chip LED 120° viewing angle

DSTR0248

Contextual Info: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com SML10IR941T-TR Infrared Surface Mount LED 3.2 x2.7 ×1.85 mm Chip LED 120° viewing angle

Contextual Info: m 1048 GaAs INFRARED EMITTING DIODE GENERAL DESCRIPTION OUTLINE typ. Unit: nini The NJL1104B is a high efficient infrared emitting diode with a glass lens. FEATURES • Narrow beam angle • High density luminous flux • High speed response APPLICATIONS

"tilt sensor"

Abstract: SUN POSITION SENSOR tilt sensor SG-302
Contextual Info: Tilt Sensor KODENSHI SG-302 DIMENSIONS Unit : mm The SG-302 reflective sensor for paper sensing combine high-output GaAs IRED with high sensitivity photodiode. It is most applicable to tilt sensor. FEATURES •High performance •High-speed response APPLICATIONS

diode smd ED 17

Abstract: sr smd diode led 940nm high power 1W diode smd ed 25
Contextual Info: OSE-9T14 IN FR A RED EM ITTIN G D IOD E OüZOJSENSORi The 0 S E -9 T 14 is GaAlAs infrared SMD LED having a having a peak wavelenght at 940nm. FEATURES • Ultra-high radiant intensity • High response speed APPLICATIONS • Digital camera. • Dark room of exposure.

Contextual Info: ITR9809-F/T Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description ․The ITR9809-F/T consist of an infrared emitting diode and

TEFT4300

Abstract: 8239 Silicon NPN Phototransistor TSAL4400 TSUS4300 npn phototransistor 86-36-2
Contextual Info: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

9t15

Abstract: DIODE SMD 1303 infrared emitting CIRCUIT smd diode 1303 OSE-9T15
Contextual Info: OSE-9T15 INFRARED EMITTING DIODE • General Description The OSE-9T15 is GaAiAs infrared SMD LED having a peak wavelenght at 940nm. ■ Features ˙Ultra-High radiant intensity ˙High response speed ■ Applications ˙Digital camera ˙Dark room of exposure

PIC-37043SM

Abstract: very long range ir remote control circuit diagram of very long range remote IR LED USED IN TV REMOTE CONTROL circuit diagram of very long range remote control IR TSOP4838 PIC ir transmit rc5 remote TSOP4838 TSOP1238 RPM7138
Contextual Info: Application Note VISHAY Vishay Semiconductors Utilizing a Vishay IrDA Transceiver for Remote Control Executive Summary Design engineers of handheld devices such as mobile phones, PDAs, and notebooks are faced with the increasingly difficult task of combining

very long range ir remote control

Abstract: circuit diagram of very long range remote control PIC ir transmit rc5 remote TV IR remote control circuit diagram philips PHILIPS SAA3049 philips remote control circuit diagram of very long range remote PIC-37043SM TSOP4838 TV IR remote control circuit diagram
Contextual Info: Application Note VISHAY Vishay Semiconductors Utilizing a Vishay IrDA Transceiver for Remote Control Executive Summary Many handheld devices like mobile phones and PDAs feature a Vishay IrDA transceiver used for short-distance, wireless communication. The emitter of this

Contextual Info: ITR9904 Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․This product itself will remain within RoHS compliant version. Description The ITR9904 consists of an infrared emitting diode and an NPN silicon phototransistor, encased oblique angle

Contextual Info: ITR20002 Features ․Cut-off visible wavelength λp=840nm ․Fast response time ․High sensitivity ․Pb free ․High analytic Description The ITR20002 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical

Contextual Info: ITR8307/L24/F43 Features ․Thin ․Fast response time ․High sensitivity ․Pb free ․High analytic ․Compact Description The ITR8307/L24/F43 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black

Contextual Info: ITR8010 Features ․Wide gap between light emitter and detector 2.1mm ․Fast response time ․High sensitivity ․Pb free Description The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical

Contextual Info: ITR8307 Features ․Thin ․Fast response time ․High sensitivity ․Pb free ․High analytic ․Compact Description The ITR8307 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black

Contextual Info: ITR20403 Features ․Fast response time ․High sensitivity ․Thin and small package ․Pb free ․This product itself will remain within RoHS compliant version Description The ITR20403 consists of an infrared emitting diode and a silicon phototransistor encased in

Contextual Info: ITR8102 Features ․Fast response time ․High analytic ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description The ITR8102 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical

Contextual Info: ITR9813 Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description ․The ITR9813 consist of an infrared emitting diode and

Contextual Info: ITR8105 Features ․Cut-off visible wavelength λp=940nm ․Fast response time ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description The ITR8105 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical

Contextual Info: ITR8307/L24/TR8 Features ․Fast response time ․High sensitivity ․Cut-Off visible wavelength ․Thin ․Compact ․Pb free ․This product itself will remain within RoHS compliant version. ․Compliance with EU REACH. ․Compliance Halogen Free . Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm .

Contextual Info: ITR9707 Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description ․The ITR9707 consist of an infrared emitting diode and

Contextual Info: ITR20510/TR8 Features ․Fast response time ․High sensitivity ․Cut-Off visible wavelength ․Thin ․Compact ․Pb free ․This product itself will remain within RoHS compliant version. Description TR20510/TR8 is a light reflection switch which includes a GaAs IR-LED transmitter and a NPN photo-transistor with