W8 MARK DIODE Search Results

BZX384-C2V4

Abstract: BZX384-C2V7 BZX384-C3 BZX384-C3V3 BZX384-C3V6 BZX384-C3V9 BZX384-C4V3 BZX384-C4V7 BZX384-C5V1 BZX384-C75
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES .012 0.3 ♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace “C” with “B” for ±2% tolerance. Other

c15T diode

Abstract: marking code zener diode wl W8 mark Diode BZT52C24T BZT52C2V0T BZT52C2V4T BZT52C2V7T BZT52C3V0T BZT52C3V3T C15T
Contextual Info: BZT52C2V0T - BZT52C24T SURFACE MOUNT ZENER DIODE Lead-free Green • · · · · Planar Die Construction Ultra-Small Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) A

TOKO TOKO TOKO TOKO

Contextual Info: REFERENCE DATA. KV1851K S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE 5. PACKAGE OUTLINE 6. PIN LAYOUT SIGNATURE DATE 7. PACKAGE OUTLINE DIMENSIONS/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES 012 0.3 ♦ Silicon Planar Power Zener Diodes Cathode Mark ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage

BZX384C39

Abstract: ic w5 3 lz 01 zener mark w9
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES .0 1 2 0 .3 ♦ Silicon Planar Power Zener Diodes Cathode Mark ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage

RTC DS1302

Abstract: ds1302 mark W8 Diode 12 hour clock and calendar schematic W8 mark Diode diode G4010 dallas date code FOR ds1302s
Contextual Info: DS1302 Trickle-Charge Timekeeping Chip www.maxim-ic.com FEATURES PIN CONFIGURATIONS Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 31 x 8 RAM for Scratchpad Data Storage

ds1302 circuit diagram

Abstract: W8 mark Diode dallas date code FOR ds1302s
Contextual Info: DS1302 Trickle-Charge Timekeeping Chip www.maxim-ic.com FEATURES PIN CONFIGURATIONS Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 31 x 8 RAM for Scratchpad Data Storage

SAWX4A0X

Abstract: W8 mark Diode saw84a0c
Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification SAWX4A0X AX4240-0X SSC Drawn Approval Customer Approval Rev. 07 September 2012 1 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-18 (Rev.00) Z-Power LED X10490 Technical Data Sheet Contents 1. Description

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification SAWX4A0X AX4240-0X SSC Drawn Approval Customer Approval Rev. 05 1 Fubruary 2011 www.acriche.com 서식번호 : SSC-QP-7-07-25 (Rev.00) Z-Power LED X10490 Technical Data Sheet Contents 1. Description 2. Part number

smd transistor mark E13

Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

TE28F160C3BD

Abstract: unlock 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3BC te28f320c3bd70 te28f160c3td70 gt28f320c3ba110
Contextual Info: Intel£ Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16) Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V– 3.6 V Read/Program/Erase — 12 V for Fast Production Programming

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

PC28F256P30BF

Abstract: PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F
Contextual Info: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits

JS28F256P30

Abstract: PC48F4400 PC28F256P30BFE RC48F4400P PC28F256P30B JS28F256P30T PC48F4400P0 PC28F256P30 js28f256p RC28F256P30TF
Contextual Info: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

28F128L30

Abstract: 28F256L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

PC28F128P30BF65

Abstract: PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode

PC28F00AP30TF

Abstract: PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30
Contextual Info: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode

pc28f128p33b

Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
Contextual Info: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read

JS28F512P33BF

Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

NEC uPD7210

Abstract: 68172 tca 785 cp VME bus controller GPIB-1014 GPIB1014D HD68450 IEEE488 MC68450 PD7210
Contextual Info: GPIB-1014D User Manual March 1997 Edition Part Number 320140-01 Copyright 1990, 1997 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support phone: (512) 795-8248