W7 ST Search Results

DIODE W7

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol

Sod marking w7

Abstract: DIODE W7
Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

marking code w7

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

W7 sod 323

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol

la 4620

Abstract: lt 6652
Contextual Info: Ref.: W7/1D Travelling-Wave Amplifier Code: W7/1D CV2358 The W 7 /1 D is a travelling-w ave am plifier fo r use in th e frequency range 3 530 to 4 620 Mc/s. It has a bandw idth o f th e o rd e r o f 1 000 Mc/s w hich makes possible th e am plification o f signals o f large

W7-12D12

Abstract: W7-12D15 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5 W7-24S12 W7-24S15 W7-24S5
Contextual Info: W7 SERIES DC/DC MODULES Applications • Servers, Switches and Data Storage • Wireless Communications • Distributed Power Architecture • Semiconductor Test Equipment • Networking Gear • Data Communications • Telecommunications • Industrial / Medical

W7 Series

Abstract: W7-12D15 smd transistor w7 transistor w7 W7-12D12 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5
Contextual Info:  1400 PROVIDENCE HIGHWAY • BUILDING 2 NORWOOD, MASSACHUSETTS 02062-5015 WWW.INTRONICS.COM W7 SERIES DC/DC MODULES Applications • Servers, Switches and Data Storage • Wireless Communications • Distributed Power Architecture • Semiconductor Test Equipment

ZENER DIODE J3

Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
Contextual Info: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.

w7 transistor

Abstract: W7-12D12 W7-12D15 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5 W7-24S12 W7-24S15
Contextual Info:  W7 Family 1400 PROVIDENCE HIGHWAY • BUILDING 2 NORWOOD, MASSACHUSETTS 02062-5015 WWW.INTRONICS.COM of 5 to 7 Watt Isolated SMD converters Features * Efficiency to 83% * Regulated output * Continuous short circuit protection * 24-Pin SMD package * 2: 1 input range

IN4937GP

Contextual Info: 1N4933GPTHRU 1N4937GP GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AL ♦ Plastic package has T Underwriters Laboratory « • Flammability Classification 94V-0 0 W7 2 7

0838-1X1T-W7

Contextual Info: INTEGRATED CONNECTOR MODULES 0838-1X1T-W7 Giagbit Power over Ethernet Plus Single Port MagJack with LEDs 2007 Bel Fuse Inc. Bel Fuse Inc. 206 Van Vorst Street, Jersey City, NJ 07302 • Tel 201-432-0463 • Fax 201-432-9542 • www.belfuse.com Specifications subject to change without notice. 11.07

P0111

Abstract: PD630 PD217 PD350 PD450 PD650 PDF311
Contextual Info: P M I C R O W A V E w7 PI N DIO DE DRIVERS ' . FEATURES: • TTL COMPATIBLE INPUTS • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE CHANNEL NUMBER OUTPUT CURRENT MODEL DC 'mA POSITIVE NEGATIVE MIN MAX

os 135 diode

Abstract: ZENER C 3V diode j5d W 135 Zener 1SZ57 ZENER Vr 3V 1sz58 1SZ59 toshiba marking mc toshiba lot number type
Contextual Info: W7 TOSHIBA {DIS CR ETE /OP TO} 9097250 TOSHIBA ÍmTI^O^SSO □ D I S C R E T E / O P T O 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Temperature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in m m VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.

Contextual Info: W7 S * LU H i W fiPD41256 262,144 X 1-Bit NEC Electronics Inc. Dynamic NMOS RAM Description Pin Configurations The /xPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,

Contextual Info: W7 S * P y lÆ JJ W /tPB100422 256 X 4-Bit 100K ECL RAM NEC Electronics Inc. Description Pin Configurations The jtPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSA—LXH1025USBD ELECTRO-OPTICAL CHARACTERISTICS Ta =25’C PARAMETER MIN TYP PEAK WAVELENGTH REV ERSE VOLTAGE POSITION 5 6 7 8 9 □ □ □ □ □ □ □ □ a 6,00 [0 ,2 3 6 ] 9 PLS. w7 J“ 10 - 5,00 [0,197] 2,50 [0,098]

CVP 37-003

Abstract: tsm1052 L6562AD L6562A 221K 1kv L6562A dimmer capacitor 221k 1kv STTH1R06A STP5NK60ZFP MMSD4148
Contextual Info: 1 2 3 C8 4 R17 5 6 DRAIN 330 100pF 1KV D5 DNI D 6.4mm Isolation D8 STTH1R06A CLAMP D6 DNI R18 R19 82K C4 0.01uF 630V X7R 82K LEDs per String 4 5 or 6 7 or 8 9 - 11 R20 82K D14 Iout MAX 1000mA 1000mA 500mA 500mA Jumpers Caps for 20% P-P Current Ripple W1-W2, W3-W4, W5-W7

Contextual Info: A dvanced W7Æ P o w e r T e c h n o lo g y APT10M19BVR ioov 75a 0.0190 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

TSX ETY-5103

Abstract: PG-TO247-3 TSX 01 7
Contextual Info: ;8?&&6+%031 0NNK!57;X 8NUDP!<P@MQHQRNP 0>L!&!/]`Tj 10+ O .>L#ba$ + // ! +> , ; 3D@RSPD )%GXi!dXhb_gf\baTdk![\Z[!hb_fTZX!fXV[ab_bZk )!N_fdT!_bi!ZTfX!V[TdZX IA MH-/2 )%IXd\bW\V!ThT_TaV[X!dTfXW )!?jfdX`X!W8*W *W7 dTfXW )%B\Z[!cXT^!VgddXaf!VTcTU\_\fk )%Cafd\ae\V!YTef(dXVbhXdk!UbWk!W\bWX

S3157

Abstract: SC-40
Contextual Info: TOSHIBA -CDIS CRETE/OPTO 1 9097250 TOSHIBA W7 <DISCRETE/OPTO ¿E | ^ Gcì7SSD □DDT3cm 1 | b6 7 C J 3 9 3 9 ^ ii_ D I -r-ea-oi S3157 S ilico n E p itaxial P la n a r T y p e Diode TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, SWITCHING APPLICATIONS.

KY transistor

Contextual Info: Section 3. Instruction Descriptions MAC Syntax: Multiply and Accumulate {label:} MAC A, Wm*Wn ,Wxp,[Wx] ,Wyp,[Wy] ,AWB B, ,Wxp,[Wx]+=kx ,Wyp,[Wy]+=ky none ,Wxp,[Wx]-=kx ,Wyp,[Wy]-=ky ,Wxp,[W5+W8] ,Wyp,[W7+W8] none none Operands: Wm*Wn ∈ {W0*W1; W0*W2; W0*W3; W1*W2; W1*W3; W2*W3}

MM5371

Abstract: MM5371N MM5370 7 segment cathode 5371N Digital alarm clock ic with 28 pin three digit common anode multiplexed 7-segment display 7-segment countdown timer
Contextual Info: M M 5370, M M 5371 Clocks M M 5 3 7 0 , M M 5 3 7 1 digital alarm clocks general description The MM5370 and MM5371 digital alarm clocks are rnonolithwTMOSJj^iegrated circuits u tilizing P-channel low-thresn^W7*renhancernent mode and ion-implanted depletion mode devices. They provide all the logic

Contextual Info: APT501OLVFR A dvan ced W7Æ P o w e r Te c h n o l o g y 500v 47a 0.1000 POWER MOSV FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™