W-BAND MMIC LNA Search Results

NJG1133MD7

Abstract: MLK0603
Contextual Info: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC QGENERAL DISCRIPTION QPACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode

Contextual Info: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode

MLK0603

Abstract: NJG1133MD7
Contextual Info: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode

LNA at 15 GHz with input power -160dB

Abstract: NJG1119PB4 HK1005 LQW15A
Contextual Info: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.

Contextual Info: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.

INV20

Contextual Info: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.

mlg0603

Abstract: FFP16 FFP16-B5 HK1005 NJG1123PB5
Contextual Info: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC !GENERAL DESCRIPTION !PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen.

diode 1GHz

Contextual Info: AMPLIFIERS 1.9/2.1GHz BAND CDMA LNA GaAs MMIC NJG1105F1 DATA SHEET TENTATIVE • GENERAL DESCRIPTION NJG1105F1 is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and W-CDMA. This amplifier provides low noise figure, high gain and high

HK1608

Abstract: NJG1105F DCS1800 GRM36 HK1005
Contextual Info: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and

2185v

Abstract: HK1005 LQW15A NJG1122PB4
Contextual Info: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1122PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.

dd s22

Abstract: DCS1800 GRM36 HK1005 HK1608 NJG1105F
Contextual Info: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and

DCS1800

Abstract: GRM36 HK1005 HK1608 NJG1105F dd s22
Contextual Info: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and

FFP16

Abstract: FFP16-B5 NJG1125PB5
Contextual Info: NJG1125PB5 W-CDMA Triple LNA GaAs MMIC QGENERAL DESCRIPTION NJG1125PB5 is a Triple band LNA IC designed for W-CDMA /UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP16–B5 is adopted.

Contextual Info: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.

HK1005

Abstract: NJG1116HB3
Contextual Info: NJG1116HB3 2.1GHz Band LNA GaAs MMIC •GENERAL DESCRIPTION NJG1116HB3 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone .This IC has the function which passes LNA, and high gain mode or low gain mode can be chosen. An ultra small and ultra thin package of USB8 is

HK1005

Abstract: MLG0603Q NJG1126HB6
Contextual Info: NJG1126HB6 2.1GHz Band LNA GaAs MMIC QGENERAL DESCRIPTION NJG1126HB6 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone . This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode.

HMC604LP3

Contextual Info: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Amplifiers - low Noise - smT 7 Typical Applications Features The HmC604lp3 / HmC604lp3e is ideal for: Noise figure: 1.5 dB • wimAX/C-band radio output ip3: +26 dBm

DSRC 5.8 GHz

Abstract: Tower Mounted Amplifiers Schematic schematic dsrc HMC604LP3 HMC604LP3E
Contextual Info: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm

DSRC 5.8 GHz

Contextual Info: HMC604LP3 / 604LP3E v00.0308 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm

CMH0819

Abstract: VQFN-24
Contextual Info: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm

CAP 0402

Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Contextual Info: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

XR1006-BD

Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

R1006 transistor

Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

DM6030HK

Abstract: TS3332LD XR1006 XR1006-BD XR1006-BD-000V XR1006-BD-EV1
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing