VW-1 H Search Results

5609 transistor

Abstract: 5622 0082 5616
Contextual Info: High Current RF Chokes Special Features • • • • • • • 5600 Series Very high current capacity Low DCR Ferrite bobbin core VW-1 rated shrink tubing to cover winding Fixed lead spacing Operating temperature -55 to +105°C Current to cause 5% maximum inductance

LB1500

Abstract: LBI500 BIF3 366B B1500 LB15Q0 AJJM
Contextual Info: ‘•'•'•VLi.r}?Üib£. *-'-î \tj'—:.'.ï . ; ■V ;>;•r‘’?.•/•A'*-4.VW' v'í'.'‘. in•■ ' $■••', ■ 'í ' :7-,:-t\ . ., iú ñ *¡:; '■ > ■V1-. ,■ 'V*•• '• V'-’ j. -':1¿3•'f'.'il^i |r;IW ?3.ó 6B 'é d W Ñ>

Contextual Info: EL2003C/EL2033C a f s M t a I- r,». B T Tb^ U Îb  M A N C k AULPS r pEC CB% J ITi S EL2003C/EL2033C 1 0W0 A f f f y VW îlt lUpCfUl T i n p T Ïïïw p t t A IflKMA A i l K C l / l * C /Ci F eatu res G eneral D escrip tion • Differential gain 0.1%

Contextual Info: T O S H IB A THMY6416H1 EG-75f-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416H1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SHIBA THMY6416H1EG-80 TENTATIVE T O S H IB A H Y BR ID D IGITAL IN TEG RA TED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416H1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

90C52

Abstract: hyundai 80c32 pl50 datasheet GMS90C320 80c32 24Mhz plcc44 200ua1
Contextual Info: OCT. 1999 Ver. 1.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C320 User’s Manual +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.1 Published by MCU Application Team 1999 HYUNDAI Micro Electronics Co., Ltd. All right reserved.

Contextual Info: 512K X 8 SRAM Module molaic PUMA 67S16000-35/45/55 Issue 1.0 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 16,777,216 bit CMOS High Speed Static RAM g S < S! 3 3 sÜS fls fe S S 3 3 5 I Features Fast Access times of 35/45/55 ns.

TLE 62

Abstract: TO220-7 package TRANSISTOR SMD MARKING CODE 42 AEB00002 AEP00592 AEP01182 AES01455 Q67000-A9110 Q67000-A9140 Q67006-A9193
Contextual Info: 5-V Low-Drop Voltage Regulator TLE 4261-2 Features • • • • • • • • • • • • • • High accuracy 5 V ± 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V

PBT-GF30

Abstract: PBT-GF20
Contextual Info: 3 6 NICHT VERHASSTE KANTEN ÄNDERUNGEN NISCHEN SIND NICHT H A ß S T Ä B L ICH DIE DEN FORTSCHRITT BEHALTEN WI R UNS ZEICHNUNG TECH­ GESCHÜTZT COPYRIGHT DIENEN, VOR AMR AUUE DEUTSCHLAND RECHTE REV . DURCH 1995 ÄNDERUNG A ZE I CHNUNG GMBH BLATT VORBEHALTEN

Contextual Info: F te i PUMA 2S1000 molate PUMA 2S1000-020/025 Issue 1.1: February 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r " ^ Pin Definition 1,048,576 bit CMOS High Speed Static RAM 1 Features User Configurable as 8,16 or 32 bit wide Very Fast access times of 20/25 ns.

n555

Abstract: N5556 D0-202AA 1N5555 1N5556 1N5557 1N5558
Contextual Info: Microsemi Corp. SANTA ANA, CA 1N5556 1N5557 1N5558 SCOTTSDALE, A Z f o r m o re in fo r m a tio n cal!: 6 0 2 941-6300 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF 1 PICO SECOND

HCTS374DMSR

Abstract: HCTS374HMSR HCTS374KMSR HCTS374MS
Contextual Info: HCTS374MS Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW • Total Dose 200K RAD (Si)

OPA2662

Contextual Info: For Im eàisle Assistance, Coniaci four Local Salesperson OPA2662 BURR-BROW N 0 H H Wide-Bandwidth, Dual, Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION • • • • The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution

Contextual Info: _ F U JIT S U _ LTD - T - ^ G 53E j> m 3 7 4 ^ 751, 0Q 033ED bT7 - í 3 ~ 7 ~ ^ • F C A J ^ November 1990 Edition 1.0 FUJITSU DATA SHEET '■ MBM27C4096-12/-15/-20 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4096 EPROM if * high speed read-only Hatic memory that ¡> UV-«rasable

TC59WM803BFT

Abstract: THMD51E30B70 CK068
Contextual Info: TOSHIBA THMD51E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: ADC80MAH-12 BURR-BROW N« l u ADC80MAH-12 Or, Call Customer Semes at 1-800-548-6132 USA Only i ABRIDGED DATA SHEET For Additional Technical Information, Request PDS-694 FEATURES circuits have been redesigned to allow simplified freerunning operation with internal or external clock.

Contextual Info: 3U0 i »yyj^ 256K x 8 CMOS SRAM molale MSM8256-45/55/70 Issue 2.1 : August 1992 PRELIMINARY S e m ic o n d u c t o r In c Pin Definition 262,144 x 8 CMOS High Speed Static RAM Package Type- •s \v Features Very Fast Access Times of 45/55/70 ns JEDEC Standard 32 pin Footprint

81HRTZ

Abstract: ISL62881HRZ ISL62881HRTZ 628 81hrtz ISL62881B 62881HRTZ thermistor ntc 60 0250 ISL62881BHRTZ TB347 TB363
Contextual Info: ISL62881, ISL62881B Features The ISL62881 is a single-phase PWM buck regulator for miroprocessor or graphics processor core power supply. It uses an integrated gate drivers to provide a complete solution. The PWM modulator of ISL62881 is based on Intersil's Robust Ripple Regulator R3 technology .

mq2 sensor

Abstract: detector mq2 A1405
Contextual Info: u t s 5 & # m j ,t » lí|l?ft: CÈ.Î5 : [ 755-fl32 79 I1B/B327BS 59/332 7BB6Ü R I í I t «vwvi iip o I I o s ü . -com 5 1 S03J fÉJt; 0763-83279203 Slilffl ' SensorOgpn I I os z com H O A 1 4 5 Reflective Sensor ELECTRICAL CHARACTERISTICS P T C « iM m -M fc a n o U Q

MH16

Abstract: MH17 MH18
Contextual Info: Bk MOSPEC MH16 thru MH18 Surface Mount High Efficiency Power Rectifiers HIGH EFFICIENCY RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

Contextual Info: 54HSC/T Series 54HSC/T165 : Parallel Load 8-Bit Shift Register The 54HSC/T165 is an 8-Bit Serial Shift Register that shifts the data in the direction of QA to QHwhen clocked. Output Internal Outputs Clock Serial Parallel A.H Q* qb L X X X a.h a b H L L

Contextual Info: JUN 10 1982 32K x 32 SRAM moìaic PUMA 2S1010-030/35/45/55/70 Issue 2.0 : May 1992 PRELIMINARY S e m ic o n d u c to r Inc. Pin Definition 1,048,576 bit CMOS High Speed Static RAM Features Ultra Fast access times of 30/35/45/55/70 ns. Configurable as 32 / 16 / 8 bit wide output.

AD5243

Abstract: AD5248 AD8610 FDV301N MO-187BA MSOP-10 OP279 B 11 MSOP-10 AD
Contextual Info: Dual 256-Position I2C Digital Potentiometer AD5243/AD5248 Preliminary Technical Data FEATURES applications. 2-Channel, 256-position End-to-end resistance 2.5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Compact MSOP-10 3 mm x 4.9 mm Package Full read/write of wiper register

Contextual Info: BURR - BROW N c REG1117 REG1117A 800mA and 1A Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES DESCRIPTION • 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS • 2.85V MODEL FOR SCSI-2 ACTIVE TERMINATION • OUTPUT CURRENT: REG1117: 800mA max