VTE7172 Search Results

Contextual Info: GaAlAs Infrared Emitting Diodes VTE7172H, 7173H Molded Lateral Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP SIZE: .011" x .011" DESCRIPTION These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic

VTE7172

Abstract: VTE7173
Contextual Info: GaAlAs Infrared Emitting Diodes VTE7172, 7173 Molded Lateral Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP SIZE: .011" x .011" DESCRIPTION These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic

7173H

Abstract: VTE7172H
Contextual Info: GaAlAs Infrared Emitting Diodes VTE7172H, 7173H Molded Lateral Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP SIZE: .011" x .011" DESCRIPTION These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: J> m SbE BDBObDR D0Q12B4 37fl « V C T GaAIAs Infrared Emitting Diodes V T E 7 1 72, 7173 Molded Lateral Package - 880 nm -T' MI -1s3 VACTEC PACKAGE DIMENSIONS inch mm .055 (1 .4 0 ) .7 0 (1 7 .8 ) MÍNIMUM .0 * 5 ( 1 . U ) .02 8 (0 .7 1 ) MAX. £ . ANODE

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

VTE1063

Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Contextual Info: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters

VTS3082

Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

VTE1291-2

Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

VTE7172

Abstract: VTE7173 PG-58
Contextual Info: SbE D • BDBDfciDR 0 0 Q 1 2 2 4 GaAIAs Infrared Emitting Diodes 37fl H V C T V T E 7 1 7 2, 7 1 7 3 Molded Lateral Package — 880 nm VACTEC PACKAGE DIMENSIONS inch mm .0 5 5 ( 1 .4 0 ) .7 0 ( 1 7 .8 ) MÍNIMUM .0 4 5 ( 1 .1 4 ) .0 2 8 ( 0 .7 1 ) MAX.