VTE1295 Search Results
VTE1295 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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VTE1295 | PerkinElmer Optoelectronics | GaAlAs Infrared Emitting Diode | Original | 22.7KB | 1 | ||
VTE1295H | Excelitas Technologies | Optoelectronics - Infrared, UV, Visible Emitters - IR LED CW-PULSD 5.5MW/CM2 NRROW | Original | 257.37KB |
VTE1295 Price and Stock
Excelitas Technologies Corporation VTE1295HIR LED CW-PULSD 5.5MW/CM2 NRROW |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VTE1295H | Bulk | 1,190 | 1 |
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Buy Now | |||||
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VTE1295H | 184 | 1 |
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Buy Now |
VTE1295 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. |
Original |
VTE1295H S3506) | |
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. |
Original |
VTE1295H S3506) | |
VTE1295HContextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. |
Original |
VTE1295H S3506) VTE1295H | |
VTE1295Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295 T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. |
Original |
VTE1295 S3506) VTE1295 | |
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
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Original |
10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 | |
VTE1063
Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
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Original |
VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 | |
VTE1291-2
Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
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VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 |