VSWR BRIDGE Search Results

VSWR Bridge

Abstract: 6230A Waveguide antenna
Contextual Info: Application Note Return Loss VSWR Measurements in Waveguide Systems Alternative methods of waveguide return loss (VSWR) measurement using the 6820 series microwave scalar analyzer are discussed and the errors associated with each are analyzed. Introduction

Contextual Info: VERTICALLY POLARISED ANTENNA MMDS VP/65/21/0 TYPE M65V72NS0E HIGHLY SUPPRESSED SIDELOBES 65° AZIMUTH COVERAGE HIGHWAY & BRIDGE COVERAGE 5 YEAR WARRANTY TECHNICAL SPECIFICATION Frequency Gain VSWR Horizontal Beamwidth Vertical Beamwidth Fixed Electrical Downtilt

8135-R0

Abstract: 21dBi
Contextual Info: VERTICALLY POLARISED HIGHWAY ANTENNA PCS VP/35/21/0,2,4 or 6 TYPE 8135-R0,2,4 or 6 HIGHLY SUPPRESSED SIDELOBES 35° AZIMUTH COVERAGE HIGHWAY AND BRIDGE COVERAGE 5 YEAR WARRANTY TECHNICAL SPECIFICATION Frequency Gain VSWR Horizontal Beamwidth Vertical Beamwidth

Contextual Info: VERTICALLY POLARISED SUPER HIGHWAY PANEL ANTENNA PCS VP/36/23/0 or 2 TYPE 8136-R0 or 2 HIGHLY SUPPRESSED SIDELOBES 36° AZIMUTH COVERAGE HIGHWAY AND BRIDGE COVERAGE 5 YEAR WARRANTY TECHNICAL SPECIFICATION Frequency Gain VSWR Horizontal Beamwidth Vertical Beamwidth

AM2931-110

Abstract: 42V32
Contextual Info: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN

50 V DC CK06

Abstract: gold capacitor AM2931-110 42V32
Contextual Info: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN

marconi 6581

Abstract: 6581 TRANSMISSION under ground cable fault distance locator Marconi 6240 GSM ANTEN long range locators gsm feeder cable
Contextual Info: Application Note Installation and Maintenance of Cellular Base Station Antenna and Feeders with the 6820 series Scalar Analyzer Measurements of Return Loss VSWR , Insertion Loss and Fault Location using the 6240 series Fault Locators with the 6820 series of Scalar Analyzers

SA051

Abstract: HEMT Amplifier
Contextual Info: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA

Contextual Info: 1# •I SURFACE MOUNT QUADRATURE HYBRID 8 0 -1 6 0 MHz MODEL JHS-119 Fully Hermetic Package Octave Bandwidth Low VSWR — 1.3:1 Guaranteed Specifications* From - 5 5 °C to + 8 5 ° C Frequency Range Insertion Loss (Less coupling) 80-160 MHz 0.75 dB Max*

Contextual Info: V •I BIPHASE MODULATOR M O D E L P M -104 2 .0 -3 .0 G H z 3.5 dB Typical Insertion Loss 1.5:1 Typical VSWR 1° Typical Phase Deviation 3 nS Switch Speed Guaranteed Specifications* From - 55°C to + 85°C Frequency Range Insertion Loss 2.0-2.8 2.8-3.0

Contextual Info: r CASCADABLE SURFACE MOUNT AMPLIFIER 5-1000 MHz GAIN: 12 dB M O DEL AMS-211 Fully Hermetic Package Thin Film Ultra Low DC Power Requirements, +5 Vdc: 55 mW Typical 3.2 dB Typical Midband Noise Figure 1.2:1 Typical Midband VSWR Guaranteed Specifications* From -55°C to +85°C Case Temp

SM4T mixer

Abstract: sm4t load insensitive mixer sm4t m4t made M4T mixer
Contextual Info: Load Insensitive Mixer M4T/SM4T V3 Features • • • • • • Product Image LO 1 to 3400 MHz RF 1 to 3400 MHz IF 1 to 2000 MHz LO Drive +10 dBm nominal Insensitive to VSWR Mismatch High Intercept +18 dBm (typ) Description The M4T is a termination insensitive mixer, designed for use in

Contextual Info: Load Insensitive Mixer M8T/M8TC V3 Features • • • • • • Product Image LO 0.001 to 3.4 GHz RF 0.001 to 3.4 GHz IF 0.001 to 2 GHz LO Drive +10 dBm nominal Insensitive To VSWR Mismatch High Intercept Point +18 dBm (typ) Description The M8T is a termination insensitive mixer, designed for use in

narda detector

Abstract: NARDA narda coupler
Contextual Info: Couplers One of the oldest circuits for impedance measurements is the Wheatstone bridge. Lockheed Martin Microwave has developed a microwave embodiment of this circuit with 35 dB directivity over the entire frequency range of 2 to 16 GHz. All ports are well matched for minimum

Contextual Info: Bridges 2.0-18.0 GHz HIGH DIRECTIVITY MICROWAVE BRIDGE • Broadband Frequency Coverage in a Single Unit from 2 to 18 GHz • High Directivity - 35 dB Min. • Accuracy - 0.018 0.11p2 SPECIFICATIONS FREQUENCY RANGE GHz MODEL DIRECTIVITY (dB Min) 2-18 5082

Contextual Info: 2 .0 -1 8 .0 GHz HIGH DIRECTIVITY MICROW AVE BRIDGE • Broadband Frequency Coverage in a Single Unit from 2 to 18 GHz • High Directivity - 35 dB Min. • Accuracy - 0.018 0.11p2 SPECIFICATIONS ACCURACY DIRECTIVITY FREQUENCY RANGE GHz MODEL (dB Min) 2-18

DMB2-18A

Abstract: VSWR Bridge DMB218 dmb-2
Contextual Info: Flange Mounted Double-Balanced Biasable Mixers DMB Series V2.00 Description Part Number DMB1-12A is a two-port mixer utilizing bridge diode quad. RF and IF are diplexed into the same port via an internal diplexer. At crossover frequency RF = IF , response for each is down 3 dB. Self-adjusting

CHS5100

Abstract: 09 66 252 761
Contextual Info: CHS5100 DC-20GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS5100 is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm implanted active layer MESFET, via holes, air bridges and electron beam gate

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Dual Control Attenuator DC-6 GHz EDlAipfia AT004N3-11, AT006N3-00, AT006N3-10, AT006N3-01 Features 30 dB Range Low D.C. Drain A T004N 3-11 Fast Switching A T006N 3-01 Low Insertion Loss 1.2 dB Low Phase Shift Bridged “T” Design

VSWR Bridge

Contextual Info: 8 Watt Bridge Power Amplifier MAAPSM0011 5.7 - 5.9 GHz Advance V3A MAAPSM0011 Functional Schematic Features • • • • 802.11a Ideal for Data Bridge Applications 38 dBm Saturated Power PSAT @ 7V 3% EVM @ POUT = 29 dBm, Dissipated Power (Pdiss) = 13 W using 54 Mbps OFDM Signal

Contextual Info: 8 Watt Bridge Power Amplifier MAAPSM0011 5.7 - 5.9 GHz • • • A2 MAAPSM0011 Functional Schematic Features • • • • Advanced 802.11a Ideal for Data Bridge Applications 38 dBm Saturated Power P SAT @ 7V 3% EVM @ POUT = 29 dBm, Dissipated Power

DC bias of gaas FET

Abstract: Application Notes ALPHA INDUSTRIES DC bias of FET AT002N3-12
Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Öl Alpha Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, Non-Reflective

CHA2090-99F/00

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 CHA2090
Contextual Info: CHA2090 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

NF 838 G

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges