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    VS-GT100TP60N Search Results

    VS-GT100TP60N Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VS-GT100TP60N
    Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 160A 417W INT-A-PAK Original PDF 191.65KB
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    VS-GT100TP60N Price and Stock

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    Vishay Semiconductors VS-GT100TP60N

    IGBT MOD 600V 160A INT-A-PAK
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    DigiKey VS-GT100TP60N Bulk 24
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    Vishay Intertechnologies VS-GT100TP60N

    Igbt, Module, Dual N-Ch, 600V, 160A; Continuous Collector Current:160A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:417W; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Vishay VS-GT100TP60N
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    Newark VS-GT100TP60N Bulk 24
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