VS BI 187 Search Results

Delta dps 240 fp

Abstract: R4000 T805 T9000 TMS320 TMS320C40 motorola analog ICs vol.1 bosch lsh 25 MOTOROLA Semiconductor Data Library Volume 3 1974 50MFlops
Contextual Info: Parallel Processing With the TMS320C4x Application Guide SPRA031 February 1994 Printed on Recycled Paper Part 1 Introduction to Parallel Processing Part 2 Hardware Applications Part 3 Software Algorithms Part 4 End Applications IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products

MC1A01

Abstract: bridge rectifier j7 A190 A19013AH1AD1 A19015AH1AD1 A7012AH1AD1 A7014AH1AD1
Contextual Info: Silicon A70, A190 Rectifier Stacks FIN 13 FIN 14/15 643 A70, A190 1. R E C T I F I E R S T A C K S E L E C T IO N C H A R T fo r 40 C am bient, free convection cooling, resistive or inductive load for other conditions — see Figures 2 thru 7 . S IN G L E P H A SE H A L F W A V E

VC06LC18X500

Abstract: VC04LC18V500 VC08LC18A500
Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

VC04LC18V500

Abstract: VC06LC18X500 VC08LC18A500
Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

"Q-bit Corporation"

Abstract: H-8702
Contextual Info: Q BH -8702 Amplifier P erform ance Specifications Specifications T ypi ca l +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

8706

Abstract: bh8706
Contextual Info: Q BH-8706 Amplifier P erform ance Specifications T ypi ca l +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Contextual Info: P6KE6.8 - P6KE440CA series P6KE6.8 - P6KE440CA 0.76 0.86 600 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS Protect sensitive electronics against voltage transients induced by electro-static discharge ESD , inductive load switching, and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and

Contextual Info: Q B S -2 56 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

diode 2000V EV2

Abstract: A35 diode bridge rectifier j7 peak 7x7x1.4 specs MC1A01 12 volt ac to dc bridge rectifier circuit A7012AH1AD1 A7014AH1AD1 ADC-318 A19013AH1AD1
Contextual Info: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, s in g le phase c e n te r ta p , using A20 c e l l s on type 11 F in s , capable o f conducting 6 .3 A a v e .p e r c e ll a t 1800 C conduction an gle in fre e a i r o r 9.8A per c e ll in 2000 lin e a r f e e t per minute fo rc e d a i r .

P6KE30A diode

Abstract: p6ke220ca P6KE36A diode E128 diode P6KE P6KE440C vs bi 187 P6KE10A P6KE11 P6KE12
Contextual Info: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.

1.5SE250

Abstract: 1.5se20a 1.5SE6.8 1.5SE400A
Contextual Info: 1500 WATT TRANSIENT VOLTAGE 1.5 SE -SE R IE S SU P P R ESSO R DIODES 5V to 342V VR _ C -4 C A S E _ FEATURES: D ESC R IP T IO N . a low cost commercial product for use in applica­ tions where large voltage transients can permanently

IPC-2221A

Abstract: 12b3 diode IPC-2152 vsc8244hg TP168 3b6 it manufacture smd 1a5 smd 9A5 TP-114 nc02
Contextual Info: Freescale Semiconductor Application Note AN3444 Rev. 0, 10/2007 A Strategy for Routing the MPC8536E in a Six-Layer PCB by Michael George DSD Applications Freescale Semiconductor, Inc. Austin, Texas This application note is a design guide to assist the customer

810MB

Abstract: TC4039BP
Contextual Info: TC4036BP, TC4039BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4036BP 4 W O R D x 8 BIT STATIC RAM B I N A R Y A D D R E S S I N G TC4039BP 4 WORD * 8 BIT STATIC RAM ( D I R E C T W O R D - L I N E A D D R E S S I N G ) T C 4 0 3 6 B P / T C 4 0 3 9 B P a r e s t a t i c R A M of 4 x 8 b i t s an d

rca 349

Abstract: 2ahou
Contextual Info: PM5348 S/UNI-DUAL DATA SHEET ISSUE 7 SATURN USER NETWORK INTERFACE :4 4: 02 AM PMC-950919 r, TM m be S/UNI- 20 02 10 PM5348 12 No ve 155-DUAL on Tu es da y, S/UNI-155-DUAL DATA SHEET ISSUE 7: JUNE 1998 Do wn lo ad ed by Sh aw n Ah ou bi m of PC N DUAL SATURN USER NETWORK

5KE12A

Abstract: 5KE440CA
Contextual Info: 1.5KE6.8 - 1.5KE440CA series 0.966 - 1.066 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and other

P3482

Contextual Info: Tem ic Siliconix Dual P-Channel Enhancement-Mode MOSFET SÌ9947DY Product Summary V D S V r DS{on) (Q ) I d (A ) -2 0 0 .1 0 @ V G S = - 1 0 V 0.1 9 @ V GS = - 4 . 5 V ± 3 .5 ± 2 .5 S O -8 n\ G2 LITTLE FOOT Gl d2 Di Di D2 D2 P-Channel MOSFET P-Channel MOSFET

Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to

S187B

Contextual Info: S T R O B E D FIRST-1 SN74ACT7802 1 024 x 1 8 FIRST-OUT M E M O R Y S C AS 187B -A U G U S T 1 9 9 0 - REVISED SEPTEMBER 1995 Load and Unl oad C l o c k s Can Be A s y n c h r o n o u s or C o i n c i d e n t Fast A c c e s s T i me s o f 30 n s With a 50-pF

Contextual Info: PM PMC-Sierra, inc. _ P M 4 3 4 1 A T 1 X C IS S U E 6 T1 FR A M ER /TR A N SC EIVER P M 4341 A T 1 XC T1 FRAMER/TRANSCEIVER Issue PMC-Sierra, Inc. 6: J ul y , 1996 Suite 1 0 5 - 8555 B axter Place, Burnaby, B.C. Canada V5A 4V 7 604.415.6200

motorola 1N4148

Abstract: JF SS34 schematic apple 4 battery sb360 equivalent 1n414b diode uses 16MV220GX RMS TO DC converter using LM358 lm358 sum low esr panasonic fj 35CV150GX
Contextual Info: Application Note 15 Practical Switching Regulator Circuits by Brian Huffman Overview A golden power supply that will satisfy every design require­ ment does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

Contextual Info: SMAJ SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 Features ■外形尺寸和印记 Outline Dimensions and Mark ●PPP 400W ●VBR 5.0V-188V DO-214AC SMA .062(1.58) .049(1.25) .111(2.83) .094(2.40) Mounting Pad Layout 0.065

Contextual Info: P6KE SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 ■外形尺寸和印记 Features ●PPP 600W ●VBR 6.8V-540V Outline Dimensions and Mark DO-204AC DO-15 .300(7.60) .230(5.80 1.0(25.4) MIN ■用途 Applications