VS 1838 B Search Results

vs 1838 b

Contextual Info: Application Note 1838 Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno Single Event Effects Testing of the ISL70444SEH, Quad 40V Radiation Hard Precision Operational Amplifiers Introduction SEE Results Objective There are many phenomena that occur past Earth's

1852A

Abstract: ADF4118
Contextual Info: Frequency Synthesizer 50Ω KSN-1852A-119+ 1768 to 1852 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-1852A-119+ is a Frequency Synthesizer, designed to operate from 1768 to 1852

ADF4153

Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

n 9013

Abstract: ADF4153 KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

2160 transistor

Abstract: TK11893 1512 regulator
Contextual Info: POWER&RF Bipolar white LED flash driver IC バイポーラ白色LEDフラッシュドライバIC TK11893AM8 HSON3030B-10 DESCRIPTION The TK11893AM8 type is a step-up DC-DC converter designed for camera lights of mobile phones and portable equipment, using constant frequency PWM architecture, with

Contextual Info: 200 -1200 MHz Standard Hybrid Amplifier Frequency range Gain vs. temperature W ide bandw idth dB +0.8/-1.4 dB Max Gain flatness 1.0 1.5 dB M ax p-p Reverse isolation 23 22 dB Min Input 2.0:1 2.0:1 Max Output 1.5:1 1.5:1 Max +8 + 7 dBm Min 3rd O rd e r +21

Contextual Info: ^"\DU QO/I Drl"0<il4 10-2000 MHz Standard Hybrid Amplifier . 1 0-2000 M Hz bandwidth Parameters | j Specification limit Temperature +25 Frequency range 10 - 2000 Small signal gain • High reverse isolation j • j j Low profile TO-8 package MHz 15.3 ± 0 . 5

Contextual Info: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation

Contextual Info: 10-400 MHz Standard Hybrid Amplifier . Parameters 10-400 M H z Temperature bandwidth Frequency range O B L I Q yin D i I“ 0 ^ t U Specification limit + 25 Small signal gain • Unconditionally stable MHz 12.5 ± 0.5 dB +0.5/-0.5 dB Max Gain flatness 1.0

Contextual Info: /N n n 10 - 150 MHz Standard Hybrid Amplifier Parameters 1 0 -1 5 0 M H z bandwidth + 25 dB dB Max 0.5 dB Max p-p 31 30 dB Min 1.5:1 1.5:1 Max 1.5:1 1.5:1 Max + 19 + 16 dBm Min 3rd O rd e r + 34 +32 dBm Min 2nd O rd e r +47 +42 dBm Min Noise figure 5.B 6.5

Contextual Info: 5 - 150 MHZ Standard Hybrid Amplifier Specification lim it Param eters 5 - 1 5 0 M H z bandwidth • Tem perature + 0.5/-0.7 dB Max Gain flatness 0.5 0.6 dB Max p-p Reverse isolation 50 50 dB Min Input 1.6:1 2.1:1 Max O utput 1.6:1 2.1:1 Max + 19 + 18 dBm Min

Contextual Info: ^ " \Q M 1 0 - 4 5 0 MHz Standard Hybrid Amplifier Parameters . 1 0 -4 5 0 M H z bandwidth Specification limit Temperature +25 Frequency range dB + 1.2/-1.0 dB M ax 1.4 dB M ax p-p Gain flatness 0.8 Reverse isolation 25 dB Min Input 1.5:1 Max Output 1.5:1

Contextual Info: OBLI 10-400 MHz Standard Hybrid Amplifier Parameters 1 0 -4 0 0 M H z bandwidth +25 10- 400 Small signal gain dB +0.4/-0.8 dB Max Gain flatness 0.6 1.0 dB Max p-p Reverse isolation 26 26 dB Min 1.5:1 1.6:1 Max 1.5:1 1.6:1 Max +7 + 4.5 dBm Min 3rd O rde r + 20

Contextual Info: I rtQZ D tl'^ O O 10 - 200 MHz Standard Hybrid Amplifier . Parameters 1 0 -2 0 0 M H z bandwidth r \m Specification limit +25 Temperature Frequency range Units -55 to +85 °c 10- 200 MHz 20.0 ± 0.5 Small signal gain dB +0.5/-1.0 dB Max • Low noise figure

Contextual Info: 5 - 300 M H z Sta n d a rd Hybrid Am plifier Parameters 5-300 M H z bandwidth / ^ Q U i n Q '» D r l " I U O Specification limit Temperature +25 -55 to + 8 5 Frequency range T0-8 package 5 -3 0 0 Small signal gain MHz 11.3 ± 0.5 dB Gain vs. temperature Unconditionally stable

Contextual Info: 1 - 1 2 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 1 12 0 0 M H z bandw idth - / “N Q I I Q A n D r l" O O U +25 Temperature Units + 0 to +65 °c 1-1200 Frequency range M Hz 15.0 ± 1.5 Small signal gain dB Gain vs. temperature Low noise figure

Contextual Info: pknu 1 0 7 'ö iD rl" I U / 5-550 MHz Standard Hybrid Amplifier Parameters 5 -5 5 0 M H z bandwidth Specification limit Tem perature +25 Frequency range Broadband low power unit 5 -5 5 0 Small signal gain MHz dB 14.8 ± 0 .5 Gain vs. temperature Low noise figure, less

Contextual Info: 10-140 MHz Standard Hybrid Amplifier Parameters . no-140 M H z bandwidth MHz 15.3 ± 0 . 5 Small signal gain Gain vs. temperature dB +0.5/-0.7 dB Max Gain flatness 0.3 0.6 dB M ax p-p Reverse isolation 34 34 dB Min 1.5 : 1 1.5 : 1 1.5 : 1 1.5 : 1 Max V SW R

"Q-bit Corporation"

Contextual Info: /^ D U 1 0 -5 0 0 MHz Sta n d a rd Hybrid Am plifier Parameters 10-500 M H z bandwidth Specification limit Temperature +25 °c lO - 500 Small signal gain MHz l l .0 ± 0.5 dB Gain vs. temperature +0.6/-1.0 dB M ax 0.8 1.0 dB M ax p-p 13 12 dB Min Input 1.6:1

Contextual Info: O D L I C Q l 7 ^w D r1 “0 0 I / 10 - 1 5 0 0 MHz S tan d ard H ybrid A m plifier Temperature bandwidth +25 °c -55 to + 85 Frequency range 10- 1500 Small signal gain MHz 13.5 ± 0.5 dB Gain vs. temperature • High 3rd order intercept point Un/ts Specification limit

Contextual Info: PD - 95683 HFA16PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

1838T

Abstract: 1838 T TRANSISTOR C483 IRGPH50MD2
Contextual Info: PD - 9.1047A International iôr]Rectifier IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces 1Short circuit rated -10[js @125°C, VGE= 15V 1Switching-loss rating includes all "tail" losses

transistor c295

Contextual Info: International H !Rectifier P D - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

HFA16PB120

Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Contextual Info: PD - 95683A HFA16PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching