VS 1838 B Search Results

vs 1838 b

Contextual Info: Application Note 1838 Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno Single Event Effects Testing of the ISL70444SEH, Quad 40V Radiation Hard Precision Operational Amplifiers Introduction SEE Results Objective There are many phenomena that occur past Earth's

ADF4153

Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

n 9013

Abstract: ADF4153 KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

2160 transistor

Abstract: TK11893 1512 regulator
Contextual Info: POWER&RF Bipolar white LED flash driver IC バイポーラ白色LEDフラッシュドライバIC TK11893AM8 HSON3030B-10 DESCRIPTION The TK11893AM8 type is a step-up DC-DC converter designed for camera lights of mobile phones and portable equipment, using constant frequency PWM architecture, with

Contextual Info: 200 -1200 MHz Standard Hybrid Amplifier Frequency range Gain vs. temperature W ide bandw idth dB +0.8/-1.4 dB Max Gain flatness 1.0 1.5 dB M ax p-p Reverse isolation 23 22 dB Min Input 2.0:1 2.0:1 Max Output 1.5:1 1.5:1 Max +8 + 7 dBm Min 3rd O rd e r +21

Contextual Info: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation

Contextual Info: 5 - 150 MHZ Standard Hybrid Amplifier Specification lim it Param eters 5 - 1 5 0 M H z bandwidth • Tem perature + 0.5/-0.7 dB Max Gain flatness 0.5 0.6 dB Max p-p Reverse isolation 50 50 dB Min Input 1.6:1 2.1:1 Max O utput 1.6:1 2.1:1 Max + 19 + 18 dBm Min

Contextual Info: ^ " \Q M 1 0 - 4 5 0 MHz Standard Hybrid Amplifier Parameters . 1 0 -4 5 0 M H z bandwidth Specification limit Temperature +25 Frequency range dB + 1.2/-1.0 dB M ax 1.4 dB M ax p-p Gain flatness 0.8 Reverse isolation 25 dB Min Input 1.5:1 Max Output 1.5:1

Contextual Info: I rtQZ D tl'^ O O 10 - 200 MHz Standard Hybrid Amplifier . Parameters 1 0 -2 0 0 M H z bandwidth r \m Specification limit +25 Temperature Frequency range Units -55 to +85 °c 10- 200 MHz 20.0 ± 0.5 Small signal gain dB +0.5/-1.0 dB Max • Low noise figure

vs 1838 b

Contextual Info: 5 - 300 MHz Standard Hybrid Amplifier Parameters • 5 -300 M H z bandwidth QBH-223 Specification limit +25 Temperature MHz 11.5 ± 0.5 Small signal gain dB Gain vs. temperature • Guaranteed specifications over temperature • °c 5 -3 0 0 Frequency range

"Q-bit Corporation"

Contextual Info: /^ D U 1 0 -5 0 0 MHz Sta n d a rd Hybrid Am plifier Parameters 10-500 M H z bandwidth Specification limit Temperature +25 °c lO - 500 Small signal gain MHz l l .0 ± 0.5 dB Gain vs. temperature +0.6/-1.0 dB M ax 0.8 1.0 dB M ax p-p 13 12 dB Min Input 1.6:1

HFA16PB120

Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Contextual Info: PD - 95683A HFA16PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

1143R

Contextual Info: Afa M a n A M P c< o m p a n y Digitai Attenuator, 31 dB, 5-Bit, TTL Driver DC - 2 GHz AT20-0263 Features • CR-12 0.350 {8.89 - ORIENTATION MARK PIN 2 v A tten u atio n : 1-dB S teps to 31 tiB- J • T e m p e ra tu re Stability: ± 0.18 dB from -40°C

Contextual Info: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses

transistor c295

Contextual Info: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

IR 1838 T

Abstract: IR 1838 IR 1838 3v HFA16TB120 IRFP250
Contextual Info: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI

9936 transistor

Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
Contextual Info: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits

CHB75-12S24

Abstract: 12s24 chb75-48s12 CHB75-48S24 CHB75-24S12
Contextual Info: E R I E S Specifications CHB75 37.5 TO 75 WATT WIDE INPUT DC-DC CONVERTERS SINGLE OUTPUT Features 37.5W-75W Isolated Output Efficiency to 85% 300KHz Switching Frequency 2 : 1 Input Range • • • • GENERAL SPECIFICATIONS: Input Voltage Range. 12V.9-18V

IR 1838

Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Contextual Info: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses

IR 1838 T

Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Contextual Info: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

ha 1758

Contextual Info: EPSON PF779-01 SEDI 748 Series D o t M a tr ix H ig h D u ty L C D D r iv e r • 160 Output Driver • Logic System Power 2.7 to 5.5V • Slim TCP • DESCRIPTION The SED1748 is a 160-output segment column driver most applicable to drive the extra large-capacity color STN

Contextual Info: PD - 95687 HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A

Contextual Info: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI