VS 1838 B Search Results

ADF4153

Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

Contextual Info: 200 -1200 MHz Standard Hybrid Amplifier Frequency range Gain vs. temperature W ide bandw idth dB +0.8/-1.4 dB Max Gain flatness 1.0 1.5 dB M ax p-p Reverse isolation 23 22 dB Min Input 2.0:1 2.0:1 Max Output 1.5:1 1.5:1 Max +8 + 7 dBm Min 3rd O rd e r +21

Contextual Info: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses

IR 1838 T

Abstract: IR 1838 IR 1838 3v HFA16TB120 IRFP250
Contextual Info: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI

IR 1838

Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Contextual Info: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses

IR 1838 T

Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Contextual Info: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4

Contextual Info: PD - 95687 HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A

Contextual Info: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI

Contextual Info: HFA16TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • BENEFITS 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

MA50

Abstract: ICH10024WS12
Contextual Info: DC DC 50 200 Watts ICH/IFH Series xppower.com • 2:1 & 4:1 Input Ranges • Efficiency up to 90% • Single Output • 40 °C to +100 °C Operating Temperature • Continuous Short Circuit Protection • Five sided Metal Case • 3 Year Warranty Specification

Contextual Info: DC-DC 50-200 Watts ICH/IFH Series xppower.com • 2:1 & 4:1 Input Ranges • Efficiency up to 90% • Single Output • -40 °C to +100 °C Operating Temperature • Continuous Short Circuit Protection • Five-sided Metal Case • 3 Year Warranty Specification

IR 1838 T

Abstract: smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh HFA16TB120 HFA16TB120S IRFP250 SMD-220 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2F
Contextual Info: Bulletin PD -20605 rev. B 11/00 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits

HFA16PB120

Abstract: IRFP250 IR 1838 1838 ir
Contextual Info: PD - 95683A HFA16PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

C2335

Contextual Info: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM K Features • • • • • BASE + 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TB120

Abstract: IRFP250
Contextual Info: HFA16TB120PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

vs 1838 b

Abstract: marking dt2 HFA16PB120 IRFP250
Contextual Info: HFA16PB120PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • • BENEFITS Cathode to base • • • • • 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions

IR 1838 T

Abstract: 5C100A D-10 IRGPH50FD2
Contextual Info: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGPH50FD2

Abstract: D-10 5C100A
Contextual Info: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

vs 1838 b

Abstract: 98-I
Contextual Info: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

lt 332 diode

Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE
Contextual Info: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V

IRG4PH50UD

Abstract: IR 1838 T
Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter