VR-103 GENERATOR Search Results

70VDC

Abstract: Zowie Technology TS-103 TS103
Contextual Info: Zowie Technology Corporation Surface Mount Switching Diode 3 ANODE 1 CATHODE BAV70WG 3 1 2 2 ANODE SOT-323 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 4.5 Adc Symbol Max. Unit Total Power Dissipation, Ts=103 C

IXYS IXBOD

Abstract: bod ixys zener 20 15r h8 diode zener c822c kp 100 thyristor
Contextual Info: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.

2a103

Contextual Info: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.

SAA7194

Contextual Info: Objective specification Philips Semiconductors Digital video decoder, scaler, and clock generator circuit DESCPro SAA7196 1. FEATURES 2. GENERAL DESCRIPTION • Digital 8-bit luminance input (video (Y) or CVBS) • Digital 8-bit chrominance input (CVBS or C from

5 to 32 decoder circuit

Abstract: VR015 YUV10 line-locked mPC 514 SAA7186 SAA7194 SAA7196 SAA7197 VR029
Contextual Info: NAPC/PHIL.IPS SEniCOND b3E D • bbS3T24 0D7fl271 Lflfl « S I C B Philips Semiconductors Video Products Objective Specification Digital video decoder, scaler and clock generator circuit DESCPro SAA7196 fi. ;■ .! m nil in BUS FEATURES • Digital 8-bit luminance input

2sk1035

Contextual Info: 2SK1035 Switching Diodes MA193 Silicon epitaxial planer type For switching circuits Unit : mm +0.2 2.8 –0.3 • Features 0.65±0.15 +0.1 1.5 0.4 –0.05 1.45 0.65±0.15 +0.25 –0.05 0.5 0.8 0.4±0.2 Unit Reverse voltage DC VR 80 Repetitive peak reverse voltage

MA3J142D

Abstract: MA142WA MA142WK MA3J142E
Contextual Info: Switching Diodes MA3J142D MA142WA , MA3J142E (MA142WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching circuits 5˚ • Two isolated elements contained in one package, allowing highdensity mounting 1 2 (0.65) (0.65) 5˚ Unit Maximum peak reverse voltage

MA132A

Abstract: MA132K MA3S132A MA3S132K
Contextual Info: Switching Diodes MA3S132A MA132A , MA3S132K (MA132K) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ (0.44) • Short reverse recovery time trr • Small terminal capacitance Ct • Allowing high-density mounting

MA142A

Abstract: MA142K MA3J142A MA3J142K
Contextual Info: Switching Diodes MA3J142A MA142A , MA3J142K (MA142K) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching circuits 0.15+0.1 –0.05 5˚ • Features (0.425) 1.25±0.1 2.1±0.1 3 • Allowing high-density mounting • Short reverse recovery time trr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S132D (MA132WA), MA3S132E (MA132WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 Rating Unit VR 80 V VRM 80 V IF 100 mA Maximum peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X193 (MA193) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuit 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 4 2 5˚ 0.5R 1 0.60+0.10 –0.05 0.40+0.10

MA3J142EG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J142DG, MA3J142EG Silicon epitaxial planar type For switching circuits • Features ■ Package • Two isolated elements contained in one package, allowing highdensity mounting

Contextual Info: Switching Diodes MA4X193 MA193 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuit 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 4 2 5˚ 0.5R 1 0.60+0.10 –0.05 0.40+0.10 –0.05 10˚ Rating Unit VR 80 V Repetitive peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S132AG, MA3S132KG Silicon epitaxial planar type For switching circuits • Package ■ Features • Code SSMini3-F3 • Pin Name MA3S132AG • Short reverse recovery time trr

MA132WA

Abstract: MA132WK MA3S132D MA3S132E
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S132D (MA132WA), MA3S132E (MA132WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 Rating Unit VR 80 V VRM 80 V IF 100 mA Maximum peak reverse voltage

MA142A

Abstract: MA142K MA3J142A MA3J142K
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J142A (MA142A), MA3J142K (MA142K) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching circuits 0.15+0.1 –0.05 5˚ • Features (0.425) 1.25±0.1 2.1±0.1 3 • Allowing high-density mounting

MA132A

Abstract: MA132K MA3S132A MA3S132K VR105
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S132A (MA132A), MA3S132K (MA132K) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 • Short reverse recovery time trr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X193 (MA193) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuit 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 4 2 5˚ 0.5R 1 0.60+0.10 –0.05 0.40+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S132A (MA132A), MA3S132K (MA132K) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 • Short reverse recovery time trr

MA142A

Abstract: MA142K MA3J142A MA3J142K
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J142A (MA142A), MA3J142K (MA142K) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching circuits 0.15+0.1 –0.05 5˚ • Features (0.425) 1.25±0.1 2.1±0.1 3 • Allowing high-density mounting

MA4X193

Abstract: TW-140
Contextual Info: Switching Diodes MA4X193 Silicon epitaxial planar type Unit : mm Silicon epitaxial planar type + 0.2 2.8 − 0.3 + 0.25 Rating + 0.1 0.4 − 0.05 0.5 0.95 1 VR 80 V Repetitive peak reverse voltage VRRM 80 V Average forward current IF AV 70 mA Repetitive peak forward current

MA700A

Abstract: MA700
Contextual Info: MA111 Schottky Barrier Diodes SBD MA700, MA700A Silicon epitaxial planer type Unit : mm For ordinary wave detection For super high speed switching ø0.45 max. COLORED BAND INDICATES CATHODE 0.2max. • Features ● Low forward rise voltage VF and satisfactory wave detection efficiency

MA2C700

Abstract: MA2C700A
Contextual Info: Schottky Barrier Diodes SBD MA2C700, MA2C700A Silicon epitaxial planar type Unit : mm For ordinary wave detection For super high speed switching φ 0.45 max. COLORED BAND INDICATES CATHODE 0.2 max. • Features • Low forward rise voltage (VF) and satisfactory wave detection

MA3S132E

Abstract: MA132WA MA132WK MA3S132D CIRCUITS750
Contextual Info: Switching Diodes MA3S132D MA132WA , MA3S132E (MA132WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 Rating Unit VR 80 V VRM 80 V IF 100 mA Maximum peak reverse voltage Forward current Single Double 3˚ IFM 225