VR INSULATED Search Results

push button switch 2 pin

Abstract: 10BASET pm5350 transistor SMD making code 3fb d32 7b5 "Lookaside Cache" diode 36b3 MIC29501 application R3F SMD smd b6h
Contextual Info: Freescale Semiconductor, Inc. User’s Manual PQ2FADS-VR-UM Revision 0.0 June 12, 2003 Freescale Semiconductor, Inc. PQ2FADS-VR User’s Manual PQ2FADS-VR User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com

SHS210

Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)

Contextual Info: EPCOS Ultracapacitors Double-layer capacitors Prismatic cell Screw terminals M6 Al case, fully insulated Rated voltage VR 2,3 V Surge voltage Vs 2,7 V Operating temperature - 30 . + 70 °C Life time 25 °C; VR Life time, cycles 90 000 h > 500 000 B49300-B

Lucent SLC 96 cabinet

Abstract: 2VR375E j85500D J85500D2 Lucent SLC 5 cabinet KS-23619 J85500D-2 electrochemical gas sensors datasheet UL-94-VO O RINGS 12 volt lead acid battery construction
Contextual Info: Enhanced VR Series Batteries KS-23619 Product Manual Select Code 157-622-011 Comcode 107817074 Issue 5 December 1998 1998 Lucent Technologies Product Manual KS-23619 Select Code 157-622-011 Comcode 107817074 Issue 5 December 1998 Lucent Technologies Enhanced VR Series Batteries

VR-60

Abstract: VR-61 Silicon Varistors VR60
Contextual Info: DIODES FOR TELEPHONES AND TELEPHONE EXCHANGES 7. 2. Silicon Varistors VR-60 and VR-61 Silicon varistors V R -60 and V R-61 have b een developped mainly for noise absorption of te le ­ phones. They consist of silicon p-n junction diodes connected in reverse parallel, and have excellen t

B43501-A5277-M

Contextual Info: EPCOS Aluminum Electrolytic Capacitors Snap-in capacitors LL grade For universal application Al case, fully insulated Snap-in solder pins provide secure locking to PC board Uniform 10-mm lead spacing Rated voltage VR 250 . 450 Vdc IEC climatic category < 400 Vdc

BS6500

Abstract: CBBR0142 H05RR-F CBBR0136 CBBR0137 CBBR0138 CBBR0140 CBBR0141 VR insulated
Contextual Info: H05RR-F Rubber Sheathed Flexible Cables Features: • Flexible tinned annealed copper conductors, Vulcanised Rubber VR insulated/Tough Rubber (TR) sheathed with EM1 rubber to form a round cable. • 300/500 volts grade to BS6500. • For use in offices, kitchens, domestic premises to supply portable

Contextual Info: _ I n t e r n a t io n a l R e c t if ie r IGBTs Insulated Gate Bipolar Transistors Vr t t Cohdorto MaxVcEfon ColactoU» Emitter Voltage Voh.) Emitter Vototg# (Vote) Part Numbor u s a 11 IcConlinuoui Cofccfex Currant Tc=25*C

Contextual Info: EPCOS Ultracapacitors Double-layer capacitors Prismatic cell r Solder pins Al case, fully insulated r Rated voltage V R Surge voltage Vs Operating temperature 2,3 V 2,7 V - 3 0 . + 70 °C Life time 25 °C; VR Life time, cycles 90 000 h > 500 000 ~ n r1 L

Contextual Info: MITSUBISHI DIODE MODULES R M 1 5 T C - 4 0 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE j RM15TC-40 I • lo DC output c u rre n t.30A • VR R M Repetitive peak reverse voltage 2000V • 3 phase bridge • Insulated Type • UL Recognized

Contextual Info: SIEM EN S BYM 300 A 170 DN2 Diode Power Module Preliminary data • Inside fast free-wheeling diode • P ackage with insulated metal base plate • Diode especially for brake choppers • matched with B S M 300 G A 170 DN 2 Type Vr 25 B Y M 300 A 170 DN2

SGD-100

Abstract: SGD-100T SPD-121 SPD-121A SPD-121M SPD-121P SPD-122P SPD-221 SPD-221A
Contextual Info: Packaged GaAs Schottky Barrier Diodes Single diodes Electrical characteristics iT-, = 25 C Absolute maximum ratings Package type Device SPD-121 Ceramic Applications C- to X-band applications, DBS and measuring instruments c, t ÿ Rs Lc @ P -f If Vr IV) lo

MD20

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. SSI —LXH 6041D—300 04.70 [0.185] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH 0,80 [0,031] REVERSE VOLTAGE lf=2DmA MAX 635 FORWARD VOLTAGE 15,EO [0,598] TYP 2.0 UNITS 2.5 5.0 Vf Vr 1r = 1DO|uA

SSL-LX509F3ID-5V

Abstract: MD20
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —LXH 6041D5V—150 04.70 [0.185] ELECTRO-OPTICAL CHARACTERISTICS T A = 2 5 T PARAMETER 0,80 [0,031] MIN PEAK WAVELENGTH 15,EO [0,598] V f= 5 V TYP MAX 635 FORWARD VOLTAGE 7.0 5.0 Vf Vr 1r = 1OOjjA AXIAL INTENSITY

SSL-LX2573SYD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —LXMP059SYD—1 50 I f = 20m A ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 ’C PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY MIN TYP 590 MAX UNITS nm 2.1 2.5 Vf 5.0 80 Vr mcd 110 2x theta

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —LXMP059SYD—1 50 I f = 20m A ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 ’C PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY MIN TYP 590 MAX UNITS nm 2.1 2.5 Vf 5.0 80 Vr mcd 110 2x theta

SSI-LXMP059SUGD150

Abstract: SSL-LX2573SUGD
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI-LXMP059SUGD1 50 I f = 20m A ELECTRO-OPTICAL CHARACTERISTICS Ta =25’C PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY MIN TYP 574 MAX UNITS nm 2.2 2.6 65 VT Vr mcd 110 2x theta 5.0 VIEWING ANGLE

MD20

Abstract: SSL-LX509F3GD
Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSI —LXH 60 4GD — 1 5 0 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 04 .7 0 [0.185] PARAMETER MIN PEAK WAVELENGTH 2.2 REVERSE VOLTAGE 0,80 [0,031] 15,EO [0,598] UNITS 2.6 5,0 Vf AXIAL INTENSITY 40 Vr mcd VIEWING ANGLE

ESAC93M-03

Abstract: H150 a287
Contextual Info: ESAC93M-03 12A LOW LOSS SUPER HIGH SPEED RECTIFIER Features Insulated package by fully m o ld in g , • l&Vr Low V[. C onnection Diagram Super high speed sw itching, • ~f I—- - f H ig h reliability by p la n er d e s ig n . • : Applications H igh speed p o w e r s w itc h in g .

ESAC93M-03

Abstract: H150 A287
Contextual Info: ESAC93M-03 12A LOW LOSS SUPER HIGH SPEED RECTIFIER Features Insulated package by fully m o ld in g , • l&Vr Low V[. C onnection Diagram Super high speed sw itching, • ~f I—- - f H ig h reliability by p la n er d e s ig n . • : Applications H igh speed p o w e r s w itc h in g .

ESAD39M

Contextual Info: ESAP39M C,IM,P (i « a s a y FAST RECOVERY DIODE ^ F eatures • ‘Hi i"C7 Insulated package by fully m olding • X k '- K * ''^ # ( c a S l' Super high speed sw itching. Low Vr in tu rn on • XflMKtt C o n n e c tio n D ia g ra m High reliability ESAD39M-QDC

ph-8 diode

Abstract: varactor diode X-band gaas varactor diodes x-band diode
Contextual Info: Package Type GaAs Schottky Barrier Diodes Single diodes Electrical characteristics Ta = 25 tl Absolute maximum ratings Package type Type No. Rs@ IF C tsf Applications lo (mA) VR (V) Cl (pF) f (MHz) Rs CQ) Vf @ If t £ @ f' PLO If (mA) LC (dB) (GHz) Pio (mW)

S94V-0

Abstract: V623P V62-3
Contextual Info: ? CUSTOMER tOPV " FOR REFERENCE ONLV .PRODUCT NO YELLOW YELLOW GREEN vr 65903-002 SLACK G R E E N . WHITE- BLUE GREEN: GREEN y 65903-008 REO SLACK YELLOW GREEN BLACK GREEN •65903-0,12/ 65903-013 - •HOUSING :MAT*L. NOTE 2 .WIRE NO. W I R E ‘COLOR WHITE:

SSL-LX2573GD-5V

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI-LXMP059GD5V1 50 4.20 EO.L65II J 1 .8 3 ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C [0 .0 7 2 ] PARAMETER MIN PEAK WAVELENGTH L.OO [0 .0 3 9 ] 7 .0 Vf 5.0 ll_ I TEST COND Vr AXIAL INTENSITY 5 VIEWING ANGLE 11 □ EMITTED COLOR: