VR 1117 Search Results

westcode diodes sw06

Abstract: 24PH W0735R 100A262 W0628 SW04-15PHR470 SW06-12PCN075 w0438 W0503R W0503SP160-240
Contextual Info: Old Part Number SW04-15PHN300 PDF Data Sheet Available RECTIFIER DEVICE - Rectifier Diodes - Stud Types N VDRM VRRM Range New Part Number IF AV @ TCASE IF(RMS) @ IF @ TCASE IFSM(1) 10ms VR IFSM(2) 10ms VR o ≤60% VRRM ≤10V TCASE 25 C 25 C o (Note 3) W0508SP040-150

westcode diodes sw06

Abstract: 11175 Ifsm SW06 SW06-12PCN075 SW06-12PCR075 W0174RR060-120 W0174SR060-120
Contextual Info: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Rectifier Diodes - Medium Power Stud Types VDRM VRRM Range New Part Number IF AV @ TCASE IF(RMS) @ IF @ TCASE IFSM(1) 10ms IFSM(2) o TCASE VR <60% 10ms VR 25 C o <10V VRRM 25 C (Note 3) o 2 I t(2)

PHN300

Abstract: PHN470
Contextual Info: Rectifier D iodes ~ S tu d & flat base types Type ^RRM Range I f AV ^ T"caSE ^F(RMS) @Tcase25°C IF @TcasE25°C I2t(2) 10ms ^FSM{1) 10ms ^FSM(2) 10ms VR«60% VR^10V (Note 2) (A) (Note 2) (A2s) (mA) (Note 1) (V) J-RRM V0 @ @ Tj Max. Tj Max. (Note 5) (V) (A) (°C)

Contextual Info: PART NUMBER REV. SSP-D29E1 0SYC-6V A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11176. DATE 10.1 1.04 PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE V f= 6 V TYP MAX UNITS 590 nm 6.0 Vf i,7oa Vr mcd 20 2x theta 5.0 AXIAL INTENSITY VIEWING ANGLE

JS SOD123

Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1.) @ TA = 25°C

WESTCODE SW

Abstract: SW06PCR075
Contextual Info: TECHNICAL PUBLICATION 0 WESTCODE < $ SEMICONDUCTORS D P75 ISSUE 1 March, 1980 Stud-Base Silicon Rectifier Diodes Type PCN/PCR075 75amperes average: up to 1200 volts Vr r m R A TIN G S Maximum values at 175°C Tj unless stated otherwise RATING SYMBOL CONDITIONS

VR4000PC

Abstract: VR4100 MIPS r3000 VR4400 R3000 R4000 VR4000 VR4200 erl-28 gh-130
Contextual Info: USER’S MANUAL VR4100TM 64-BIT MICROPROCESSOR PRELIMINARY µPD30100 C NEC Corporation 1995 C MIPS Technologies Inc. 1993 Document No. U10050EJ3V0UM00 (3rd edition) Date Published January 1996 P Printed in Japan VR4000, VR4000PC, VR4100, VR4200, VR4400, and VR-Series are trademarks of NEC Corporation.

MIL-M-3B510

Abstract: ECL binary Counter
Contextual Info: REVISIONS LTR DESCRIPTION DATE VR-MO-M Add fig u re 3. Technical changes in 1 .3 , 1 .4 , and tables I and I I . Change in terminal connections. E d ito ria l changes throughout. APPROVED 89 AUG 28 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 3 PMIC N/A

IR 936

Abstract: PCN055
Contextual Info: Rectifier Diodes ~ Stud & fiat base types Type | V RRM Range If AV ^ T"cASE ^(RMS) @25°C IF @25°C IpSM(2) 10ms 10ms V r=s 60% VR« 1 0 V I2t (2) Irrm 10ms V0 @ Tj Max. ^RRM (Note 5) (Note 2) (Note 2) (Note 1) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S)

SWXPHN400

Abstract: SWXPCN012 st1500 11175 SWXHHN320 SWXHHN380 SWXKBR515 SWXKBR595 SWXPCN075 SWXPHN300
Contextual Info: Rectifier D iodes ~ Stud & fiat base types V RRM Range If AV ^ T"cASE IF @25°C ^F(RMS) @25°C IpSM (2) 10ms 10ms V r=s 60% VR« 1 0 V I2t l M* Type (2) 10ms V0 @ Tj Max. ^ RBM (Note 2) (Note 2) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S) (V) SWxPCN012 200-1200

pcn040

Abstract: SWXPHN400 pcn075 PCN030 SWXHHN400 11175 SWXHHN320 ST1500 SWXKBR515 SWXKBR595
Contextual Info: Rectifier D iodes ~ Stud & fiat base types V RRM Range If A V ^ T" c ASE IF @25°C ^F(RMS) @25°C IpSM (2) 10ms 10ms V r=s 60% VR« 1 0 V I2t l M* Type (2) 10ms V0 @ Tj Max. ^RBM (Note 2) (Note 2) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S) (V) SWxPCN012 200-1200

U31RT

Abstract: jo bolt
Contextual Info: r • • - ü æ ï l •; =i 'M e l i l i frw CATALOG V P NUMBER CODE AWG NAVY METRIC SIZE «CLASS 2) a iFTCTI K O Ii vr BOLT SIZE FIG. NO. BOLT SIZE 1 YA31L-2TC12-45 YA31L-2TC12-90 350 ken11 YA31-2LN-45 1 YA31-2LN-90 2 ’ . " " D I K C TS5

SONY KNC 201 15

Abstract: knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31
Contextual Info: 1 2 3 4 5 6 7 8 ED3-UMA DESIGN A RUN POWER SW AC/BATT CONNECTOR A Dothan PG 37 DC/DC +3V_SRC +5VSUS 478 Micro-FCPGA PG 34 BATT CHARGER VER : F3B PG 37 CPU VR PG 34 CLOCKS PG 17 PG 33 PG 5, 6 FSB 133MHZ LVDS DDRII-SODIMM1 PG 15, 16 Panel Connector PG 18 Alviso 915GM/GML

PHN300

Abstract: PCN030
Contextual Info: R ectifier D iodes ~ Stud & flat base types Type ^RR M ^F AV Range a» T ca se ^ F S M ( l) ^ F SM {2) I2 t (2) 1 10ms 10ms 10ms VR=s60% Vfi« 1 0 V IF ^ f (r m s ) @25°C @25°C I rrm v„ @ Tj Max. ^RR M (Note 5) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2s)

HVD142

Abstract: DSA003637
Contextual Info: HVD142 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1117 Z Rev.0 Jan. 2001 Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf=1.5 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

1117d

Abstract: 1116D 9906A CSS-1116 CSS-1116D
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 1 inch 25.4mm Digit height. Case mold type Excellent character appearance Wide viewing angle SINGLE DIGIT DISPLY CSS-1116D/1117D Model no. § Description § § Mechanical Dimension Typical Internal Equivalent Circuit

1117G

Abstract: 1116G
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 1 inch 25.4mm Digit height. Case mold type Excellent character appearance Wide viewing angle SINGLE DIGIT DISPLY CSS-1116G/1117G Model no. § § Description § § Mechanical Dimension Typical Internal Equivalent Circuit

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5.0 VF0 = 2.0 rF = 3.8 VDClink = 2700 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-01 July 98 Features • Patented free-floating silicon technology

IGCT

Abstract: 5SDF03D4502
Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 255 400 5 2.00 3.8 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology

Contextual Info: PART NUMBER REV. SSP-D29B9SUGC-28V A UNCONTROLLED DOCUMENT REV, A 010,00 E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11176. DATE 10.1 B.04 [0 0 ,3 9 4 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE

PRE030N

Contextual Info: PART NUMBER REV. SSP-D29E10SUGC-6V A UNCONTROLLED DOCUMENT REV, A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11176. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE V f= 6 V TYP MAX UNITS 574 nm G.D

Contextual Info: PART NUMBER REV. SSP-D29B9SYC-28V A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11176. DATE 10.1 B.04 UNCONTROLLED DOCUMENT REV, A 010,00 [0 0 ,3 9 4 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE

Contextual Info: PART NUMBER REV. SSP —D29B9SIC —28 V A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11176. DATE 10.1 B.04 UNCONTROLLED DOCUMENT REV, A 010,00 [0 0 ,3 9 4 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE