VQE 24 ER Search Results

kf 202 transistor

Abstract: transistor KF
Contextual Info: FF 50 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 50 A V ces ¡c Therm ische Eigenschaften Thermal properties 0,225 DC, pro Baustein /p e r module DC, pro Zweig / per arm

1BW TRANSISTOR

Contextual Info: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften

FF50R12KF2

Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module

Contextual Info: FS 20 R 06 KFS Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 20 A VcES lc Thermal properties DC, pro B a u ste in /p e r module t'vj max tvj op 2,08

FF50R12KF2

Abstract: FF50R12
Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe W erte V ces Maximum rated values 600 V 300 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,045 3C/W RthJC DC, pro Zweig / per arm

R1200

Abstract: diode v3e
Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm

8Q transistor

Contextual Info: Technische Information/Technical Information IGBT-Module IGBT-Modules FZ 800 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung 800

Contextual Info: Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzu lässige W erte Maximum rated values 1200 V 50 A V CES lc Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,083 ‘’C/W DC, pro Zweig / per arm

Contextual Info: FF 100 R 06 KF 2 Electrical properties VcES Maximum rated values 600 V lc 100 A IC R M 200 A O 400 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte lF max ¡F R M t p =1 ms Maximum rated values

Contextual Info: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve

Contextual Info: mH/ERBC CM150DU-24H Powerex, Inc., 200 HIIHs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DlJ3Í IGBTMOD U-Series Module 150 Amperes/1200 Volts Tc Measured Description: r Ki r Ki r Ki Ís t L í — i t IT Powerex IGBTMOD™ Modules are designed for use in switching

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

vqe 24 d

Contextual Info: FS 50 R 06 KF 3 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,075 °C/W RthJC DC, pro Zweig / per arm 0,450 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values

Contextual Info: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK VcES lc 1200 V 200

CW1200

Contextual Info: FS 50 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 1200 V 50 A V CES Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,083 ‘’C/W DC, pro Zweig / per arm

transistor KF

Contextual Info: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,175 C/W Rthjc DC, pro Zweig / per arm

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

kl2 t1 transistor

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

Eupec BSM

Abstract: BSM50GP60 eupec
Contextual Info: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

5N602

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

transistor 10 sS 125

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,045 Rtruc DC, pro Baustein / per module 0,090 DC, pro Zweig / per arm 0,030 RthCK pro Baustein / per module pro Z w e ig / per arm

vqe 24 d

Abstract: VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d
Contextual Info: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm al properties Therm ische Eigenschaften 0,175 C/W Rthjc DC, pro Baustein / per module 0,35 °C/W DC, pro Zweig / per arm 0,06 “C/W RthCK pro B a u ste in /p e r module