VQE 24 E Search Results

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International ira] Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency cun/e

Contextual Info: International giilRectifier PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses V c es = 6 0 0 V • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

VPI05

Abstract: IGBT SGP15N60
Contextual Info: SIEMENS SGP15N60 P rulim inary data IGBT • Low forward voltage drop r / • High switching speed VPI05I55 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type ^CE h Package Ordering Code SGP15N60 600V 15A TO-220 AB Q67040-A . . . .

Contextual Info: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

Contextual Info: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high

Contextual Info: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

Contextual Info: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

bvp DIODE

Abstract: 30-HV CM15TF-24H 7294b21 BWP 34
Contextual Info: m N BG X CM15TF-24H Powarex, inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SiXm /GBT IGBTMOD H-Series Module 15 Amperes/1200 Volts - O 8oP EuP D D BvP EvP BwP EwP S - DIA— (2 TYP.) I I e d -N — H ff TM L Description: Powerex IGBTMOD™ Modules are

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

Contextual Info: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve

Contextual Info: FS 50 R 06 KF 3 Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,075 °C/W DC, pro Zweig / per arm 0,450 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 50 A le 150 ‘

TLP523

Abstract: VQE 22 led VQE 24 led 11-5B2 E67349 TLP523-2 TLP523-4 Scans-009098
Contextual Info: TO SHIBA TLP523,TLP523-2,TLP523-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP523, TLP523-2, TLP523-4 PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected,

siemens igbt BSM 200 GA 120

Abstract: 1C00 siemens bsm 284 f siemens R9
Contextual Info: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

CM200DY-24H

Abstract: DGD12
Contextual Info: CM200DY-24H Powerex, Inc., 200HHUs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 D U dl IGBTMOD H-Series Module 200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

ic RSN 315 H 42

Abstract: vqe 23c iCR 406 J
Contextual Info: International IGR Rectifier PD-9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of ail power supply topologies

Contextual Info: International Bgj]Rectifier_ PD - 5.028 CPU165MF IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • H EXFRED soft ultrafast diodes • O ptim ized for medium operating frequency 1 to 10kHz

Contextual Info: TOSHIBA GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 03 Unit in mm STROBE FLASH APPLICATIONS 6.8 M A X • • • 3rd Generation Enhancement-Mode Low Saturation Voltage T ; TVUE sat — ° v uvifct-x.; ( 4.5 V Gate Drive

Contextual Info: bME D • 7 2 T 4 L 2 1 Q 0 Q b 7 b Q SS7 H P R X CM15TF-12E Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 po uerex in c S lX -IG B T IGBTMOD