VQE 24 E Search Results

vqe 24 d

Contextual Info: FS 50 R 06 KF 3 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,075 °C/W RthJC DC, pro Zweig / per arm 0,450 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values

kf 202 transistor

Contextual Info: FF 50 R 06 KF 3 T herm a l p ro p e rtie s T h e rm is c h e E ig e n sch a fte n 0,225 DC, pro Baustein /p e r module RthJC 0,450 DC, pro Zweig / per arm 0,060 pro Baustein / per module RthCK 0,120 pro Zweig / per arm T ra n s is to r T ra n s is to r E le k tris c h e E ig e n sch a fte n

Contextual Info: FF 100 R 06 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values Ic Therm ische Eigenschaften DC, pro Baustein / R th J C R th C K 600 V 100 A Thermal properties 0 ,1 5 5 0 ,3 1 0 ,0 6

kf 202 transistor

Abstract: transistor KF
Contextual Info: FF 50 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 50 A V ces ¡c Therm ische Eigenschaften Thermal properties 0,225 DC, pro Baustein /p e r module DC, pro Zweig / per arm

vqe 24 d

Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Contextual Info: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

1BW TRANSISTOR

Contextual Info: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften

kl2 t1 transistor

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

FF50R12KF2

Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module

bsm15gd120dn2e3224

Contextual Info: B S M 1 5 G D 1 2 0 DN2 e u o e c F IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Package Ordering Code BSM 15 GD 120 DN2 VbE 1200V 25A ECONOPACK 2 C67076-A2504-A67

C1645

Abstract: igbt BSM 400 GA 120
Contextual Info: euoec F BSM 400 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code 1200V 550A SINGLE SWITCH C67070-A2302-A70 1200V 550A SSW SENSE 1 C67070-A2308-A70 Type

Eupec BSM

Abstract: BSM50GP60 eupec
Contextual Info: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

diode sg 5 ts

Abstract: 1BW TRANSISTOR EUPEC tt 93 n
Contextual Info: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module

Contextual Info: FS 20 R 06 KFS Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 20 A VcES lc Thermal properties DC, pro B a u ste in /p e r module t'vj max tvj op 2,08

Contextual Info: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module

transistor 10 sS 125

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,045 Rtruc DC, pro Baustein / per module 0,090 DC, pro Zweig / per arm 0,030 RthCK pro Baustein / per module pro Z w e ig / per arm

vqe 24 d

Abstract: VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d
Contextual Info: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm al properties Therm ische Eigenschaften 0,175 C/W Rthjc DC, pro Baustein / per module 0,35 °C/W DC, pro Zweig / per arm 0,06 “C/W RthCK pro B a u ste in /p e r module

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module

FF50R12KF2

Abstract: FF50R12
Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe W erte V ces Maximum rated values 600 V 300 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,045 3C/W RthJC DC, pro Zweig / per arm

lc 945 p transistor

Abstract: lc 945 transistor
Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: euoec B S M 1 5 G D 1 2 0 D2 F IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 15 GD 120 D2 1200V 25A SIXPACK 1 C67076-A2504-A17

Contextual Info: International ira] Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency cun/e