VQE 24 Search Results

2SA562TM

Abstract: 2SC1959
Contextual Info: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c839 transistor

Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
Contextual Info: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz

transistor c900

Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Contextual Info: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses

IOR 450 M

Abstract: c468 c467 c463 TRANSISTORS 640 JS
Contextual Info: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c877

Abstract: TRANSISTOR C875 C878 transistor transistor c877 c878 C875 transistor C876 c874
Contextual Info: P D - 9.1129 bitemational [ÏÔR Rectifier IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - lOpis @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over

2SA1588

Abstract: 2SC4118 A1588
Contextual Info: TOSHIBA 2SA1588 2 S A 1 588 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

transistor C930

Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Contextual Info: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

C869

Abstract: transistor C870 irectifier c872
Contextual Info: P D - 9.1134 kitemational IÎÔRIRectifier IRGBC40K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-ioss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz

C1027

Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Contextual Info: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)

c 2432

Abstract: D72F5T2 NPN
Contextual Info: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They

Contextual Info: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance

IXSN35N120AU1

Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VC E S = 1200 V = 70 A = 4V C 25 V C E sat S C S O A Capability Symbol Test Conditions Maximum Ratings V 'CES T j = 25°C to 150°C vCGR T, = 25°C to 150°C; RGE = 1 MiJ 1200 A VOES vQE„ C ontinuous ±20 V Transient

Contextual Info: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 12 KL4C vorläufige Daten prelim inary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: 4WEREX CM400HU-24H Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD U-Series Module 400 Amperes/1200 Volts | A Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

IRGPC46

Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Contextual Info: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate

Contextual Info: CM150DY-24H Powerex, Inc., 200Hillfs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DUSl IGBTMOD H-Series Module 150 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: mVEREX CM600HU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD U-Series Module 600 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists