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    VQE 23 F Search Results

    VQE 23 F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3J356R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Datasheet
    SSM3J332R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Datasheet
    SSM3J351R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Datasheet
    SSM3K361R
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Datasheet
    SSM3K341R
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Datasheet

    VQE 23 F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vqe 23

    Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
    Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961


    Original
    VQE-11-021510/Mr. Barone/614-692-0510) MIL-PRF-19500N, JANS1N829-1 vqe 23 WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422 PDF

    c846 transistor

    Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
    Contextual Info: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K TQ-220AB C-848 c846 transistor c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors" PDF

    VQE 23 E

    Abstract: VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12
    Contextual Info: euoec F BSM 50 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 50 GAL 120 DN2 VCE h 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70


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    C67076-A2010-A70 Nov-24-1997 VQE 23 E VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12 PDF

    G675

    Abstract: c679 transistor d680 g678 G676
    Contextual Info: P D - 9.1032 kitemational gffiR]Rectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail“ losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC30U O-247AC G675 c679 transistor d680 g678 G676 PDF

    c845

    Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845 PDF

    A4200

    Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
    Contextual Info: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2


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    O-218 Q67078-A4200-A2 6E35b05 S235b05 D0flS031 A4200 bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304 PDF

    transistor c905

    Abstract: LE C906 c912 c906 transistor
    Contextual Info: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses


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    -10ps IRGBC30KD2 O-22QAB C-912 transistor c905 LE C906 c912 c906 transistor PDF

    c679 transistor

    Abstract: G882 C679
    Contextual Info: International [^R ectifier P D - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGPC30K O-247AC c679 transistor G882 C679 PDF

    DI 944

    Abstract: c941 transistor C943 transistor C942 transistor c942 irgpc30kd2 transistor C938 transistor c943 C937 diode C937
    Contextual Info: P D - 9.1081 kitemational [ÎÔR]Rectifier IRGPC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -10 jjs @125°C, VGE= 15V Switching-loss rating includes all 'tail" losses


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    IRGPC30KD2 C-943 O-247AC C-944 DI 944 c941 transistor C943 transistor C942 transistor c942 irgpc30kd2 transistor C938 transistor c943 C937 diode C937 PDF

    vqe 24 d

    Abstract: JS7J
    Contextual Info: euoec B S M 1 0 G D 6 0 DL F IGBT Power Module Preliminary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 60 DL VbE 600V h 11.5A


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    Oct-23-1997 vqe 24 d JS7J PDF

    VQE 23 E

    Abstract: VQE 22 e
    Contextual Info: euoec F BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 120 DN2 1200V 78A lC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter


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    C67076-A2105-A70 Oct-21-1997 VQE 23 E VQE 22 e PDF

    Contextual Info: P D - 9.1132 bitemational [ÎQR 1Rectifier IRGBC30K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K-S IRQBC30K-S SMD-220 PDF

    Contextual Info: euoec F BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE BSM 50 GD 120 DN2G 1200V 78A lC Package Ordering Code ECONOPACK 3 C67070-A2521-A67


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    C67070-A2521-A. 0ct-20-1997 PDF

    vqe 71

    Abstract: VQE 14 C VQE 23
    Contextual Info: P D -9.1031 bitemational IÏÔ R ]Rectifier IRGPC20U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC20U O-247AC O-247AC vqe 71 VQE 14 C VQE 23 PDF

    transistor c374

    Abstract: transistor c373 transistor c377
    Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377 PDF

    transistor c324

    Contextual Info: International [rc Rectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    10kHz) IRGPC30M O-247AC C-326 transistor c324 PDF

    C818

    Abstract: rq20 C814 c815
    Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGTI050U06 C-817 C-818 C818 rq20 C814 c815 PDF

    307d

    Abstract: vqe 14 E P 307 diode 307d
    Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code


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    O-218 Q67040-A4221-A2 Dec-02-1996 307d vqe 14 E P 307 diode 307d PDF

    transistor c925

    Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
    Contextual Info: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses


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    IRGBC30KD2-S C-927 SMD-220 C-928 transistor c925 smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925 PDF

    Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC30U 100pical 5545E O-247AC PDF

    transistor C710

    Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716
    Contextual Info: bitemational ^Rectifier PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c es = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


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    IRGPC30UD2 C-715 O-247AC C-716 transistor C710 C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716 PDF

    Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    PC30W PDF

    Contextual Info: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    10kHz) IRGBC30F T0-22QAB PDF

    Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V


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    IRG4IBC20KD 25kHz T0-220 PDF