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    VQE 23 F Search Results

    VQE 23 F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3J356R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Datasheet
    SSM3J332R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Datasheet
    SSM3J351R
    Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Datasheet
    SSM3K361R
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Datasheet
    SSM3K341R
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Datasheet

    VQE 23 F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vqe 23

    Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
    Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961


    Original
    VQE-11-021510/Mr. Barone/614-692-0510) MIL-PRF-19500N, JANS1N829-1 vqe 23 WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422 PDF

    c845

    Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845 PDF

    transistor c374

    Abstract: transistor c373 transistor c377
    Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377 PDF

    307d

    Abstract: vqe 14 E P 307 diode 307d
    Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code


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    O-218 Q67040-A4221-A2 Dec-02-1996 307d vqe 14 E P 307 diode 307d PDF

    Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC30U 100pical 5545E O-247AC PDF

    Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    PC30W PDF

    Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V


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    IRG4IBC20KD 25kHz T0-220 PDF

    transistor c925

    Abstract: DIODE C921
    Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921 PDF

    TRANSISTOR 2FE

    Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    IRG4PC30U O-247AC TRANSISTOR 2FE PDF

    Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve


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    IRG4BC30W 0D2flb53 PDF

    Contextual Info: bitemational H r Rectifier PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGB420U O-220AB C-579 4AS54S2 O-22QAB C-580 SSH55 PDF

    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


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    1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S PDF

    Contextual Info: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    IRG4BC30S O-220AB PDF

    Contextual Info: International IQ R Rectifier PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    1452C IRG4BC30U TQ-220AB 10nch PDF

    Transistor C604

    Contextual Info: PD - 9.780A International ïo r Rectifier IRGP430U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGP430U O-247AC 4S55452 002D3m Transistor C604 PDF

    Contextual Info: International P D - 9.1108 ioR Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 6 0 0 V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30MD2 -10ps 10kHz) TQ-220AB C-364 55M52 PDF

    G4PC40

    Abstract: g4pc40f G4PC4 G4PC
    Contextual Info: International IG R Rectifier PD - 9.1463A IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


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    IRG4PC40F O-247AC G4pc40f, G4PC40 g4pc40f G4PC4 G4PC PDF

    Contextual Info: International IC R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


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    IRG4PC40FD O-247AC 554S2 PDF

    Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


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    1RG4BC30K-S S54SH PDF

    irgpc50

    Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


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    001Db33 IRGPC50 O-247AC 5S452 0D10b37 S54S2 0Q10b3Ã irgpc50 PDF

    Contextual Info: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC40U 100ase D2D47S O-247AC Q02DM7b PDF

    Contextual Info: PD - 9.689A International BRectifier IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC30F 10kHz) O-220AB TQ-220AB 554S2 PDF

    Contextual Info: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


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    O-22QAB 002fl0Rb PDF

    LE C346

    Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    IRGBC30M-S 10kHz) SMD-220 C-346 4flS54S2 002013b LE C346 PDF