VQE 23 E Search Results

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

Contextual Info: Preliminary Data Sheet PD - 9.1115 International lü R e c tifie r IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces = 1200V • Short circuit rated - 1 0 m s @125°C, Vge = 15V

siemens igbt BSM 200 GA 120

Abstract: 1C00 siemens bsm 284 f siemens R9
Contextual Info: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

siemens EM 235

Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
Contextual Info: feOE D • fl235bOS 004Sflb4 TÔT ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 75 GB 120 D BSM 75 G AL 120 D IGBT Module Preliminary Data y CE = 1 2 0 0 V / c = 2 x 100 A at Tc = 25 C / c = 2 x 7 5 A at r c = 8 0 C • • • • • Power m odule Half-bridge/Chopper

2SC2714

Abstract: transistor C5D marking 9rb
Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR 2SC2714 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 FM, RF, MIX, IF AM PLIFIER APPLICATIONS. FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF (Typ.)

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

ic RSN 315 H 42

Abstract: vqe 23c iCR 406 J
Contextual Info: International IGR Rectifier PD-9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of ail power supply topologies

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

Contextual Info: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve

optocoupler 207

Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo­ transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package.

Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V

G4PC30F

Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Contextual Info: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r

siemens igbt BSM 150 gb 100 d

Abstract: BSM100GB120D siemens igbt
Contextual Info: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •

c845

Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International Bgj]Rectifier_ PD - 5.028 CPU165MF IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • H EXFRED soft ultrafast diodes • O ptim ized for medium operating frequency 1 to 10kHz

Contextual Info: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage