VQE 23 E Search Results
VQE 23 E Price and Stock
Advantech Co Ltd AGS-CTOS-SV-QEOTCalibration, Warranties, & Service Plans Sandvine Quarter End Overtime |
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C&K Switches ET23MD1AVQEToggle Switches DPDT ON OFF ON |
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ET23MD1AVQE |
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VQE 23 E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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vqe 23
Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
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VQE-11-021510/Mr. Barone/614-692-0510) MIL-PRF-19500N, JANS1N829-1 vqe 23 WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422 | |
307d
Abstract: vqe 14 E P 307 diode 307d
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OCR Scan |
O-218 Q67040-A4221-A2 Dec-02-1996 307d vqe 14 E P 307 diode 307d | |
Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve |
OCR Scan |
IRGPC30U 100pical 5545E O-247AC | |
Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies |
OCR Scan |
PC30W | |
Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V |
OCR Scan |
IRG4IBC20KD 25kHz T0-220 | |
Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve |
OCR Scan |
IRG4BC30W 0D2flb53 | |
VPT05155
Abstract: bup410d
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OCR Scan |
SGP04N60 SGP04N60 T05155 Q67040-A O-220 BUP410D Apr-07-1998 GPT05155 VPT05155 bup410d | |
Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve |
OCR Scan |
1656B IRG4PC40W 554S2 | |
Contextual Info: Preliminary Data Sheet PD - 9.1115 International lü R e c tifie r IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces = 1200V • Short circuit rated - 1 0 m s @125°C, Vge = 15V |
OCR Scan |
IRGPH30MD2 10kHz) 00A/ps O-247AC C-478 002D2bfl | |
siemens igbt BSM 200 GA 120
Abstract: 1C00 siemens bsm 284 f siemens R9
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OCR Scan |
0D45R20 C67076-A2000-A2 siemens igbt BSM 200 GA 120 1C00 siemens bsm 284 f siemens R9 | |
Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a |
OCR Scan |
CA3146, CA3146A, CA3183, CA3183A CA3183 | |
siemens EM 235
Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
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OCR Scan |
fl235bOS 004Sflb4 C67076-A2106-A2 C67076-A2011-A2 SII00238 siemens EM 235 siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100 | |
2SC2714
Abstract: transistor C5D marking 9rb
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OCR Scan |
2SC2714 100MHz) SC-59 2SC2714 transistor C5D marking 9rb | |
Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies |
OCR Scan |
MS5SM52 P0S1V22 | |
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ic RSN 315 H 42
Abstract: vqe 23c iCR 406 J
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OCR Scan |
IRG4BC30W ic RSN 315 H 42 vqe 23c iCR 406 J | |
C943 transistor
Abstract: DI 944 c939 transistor transistor c939 transistor C938
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OCR Scan |
IRGPC30KD2 O-247AC C-944 C943 transistor DI 944 c939 transistor transistor c939 transistor C938 | |
Contextual Info: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve |
OCR Scan |
IRGPC20U O-247AC 00504b4 | |
optocoupler 207Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. |
OCR Scan |
MCT62H MCT62H 11-Ja optocoupler 207 | |
Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V |
OCR Scan |
IRGPH30S 400Hz) O-247AC MA55MS2 | |
G4PC30F
Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
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OCR Scan |
IRG4PC30F O-247AC O-247AC G4pc30f, G4PC30F G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F | |
siemens igbt BSM 150 gb 100 d
Abstract: BSM100GB120D siemens igbt
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OCR Scan |
235ti05 2x135 2x100 C67076-A2107-A2 C67076-A2012-A2 siemens igbt BSM 150 gb 100 d BSM100GB120D siemens igbt | |
c845Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz |
OCR Scan |
IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845 | |
Contextual Info: International Bgj]Rectifier_ PD - 5.028 CPU165MF IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • H EXFRED soft ultrafast diodes • O ptim ized for medium operating frequency 1 to 10kHz |
OCR Scan |
CPU165MF 10kHz) 360Vdc, C-140 55M52 | |
Contextual Info: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage |
OCR Scan |
PD-91791 IRG4IBC30W |