VQE 23 E Search Results

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

VQE 23 E

Abstract: VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12
Contextual Info: euoec F BSM 50 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 50 GAL 120 DN2 VCE h 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

A4200

Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Contextual Info: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2

c679 transistor

Abstract: G882 C679
Contextual Info: International [^R ectifier P D - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

vqe 24 d

Abstract: JS7J
Contextual Info: euoec B S M 1 0 G D 6 0 DL F IGBT Power Module Preliminary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 60 DL VbE 600V h 11.5A

VQE 23 E

Abstract: VQE 22 e
Contextual Info: euoec F BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 120 DN2 1200V 78A lC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter

Contextual Info: euoec F BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE BSM 50 GD 120 DN2G 1200V 78A lC Package Ordering Code ECONOPACK 3 C67070-A2521-A67

Contextual Info: euoec F BSM 50 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings

C818

Abstract: rq20 C814 c815
Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

transistor C710

Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716
Contextual Info: bitemational ^Rectifier PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c es = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 306D 1200V 23A !c Pin 3 E C Package

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

1187 GE

Contextual Info: SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 304 VfcE 1000V 35A C Pin 3 E Package Ordering Code TO-218AB Q67078-A4200-A2 Maximum Ratings

vqe 23 c

Contextual Info: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties

BUP 200

Abstract: BUP306D Q67040-A4222-A2 bup 400 df ge IR-3050
Contextual Info: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE BUP 306D 1200V 23A !c Pin 3 E C Package Ordering Code

Contextual Info: PD-5.045 International IGR Rectifier IGBT SIP MODULE Features CPV362M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optim ized fo r high operating frequencies >5.0 kHz , and Short Circuit Rated to 10jjs @125°C, V g e = 15V • Fully isolated printed circuit board mount package

2903D

Abstract: irgddn200m12
Contextual Info: International ^R ectifier PD -9.1170 IRGDDN200M12 IRGRDN200M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK • Rugged Design •S im p le gate-drive .Sw itching-Loss Rating includes all "tail" losses •S h o rt circuit rated Low conduction loss IGBT V Œ = lc =

rac 16a 400v

Abstract: C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034
Contextual Info: PD - 9.1121A bitemational tor]Rectifier IRGPH50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V C ES • Short circuit rated -1 Ops @ 125°C, VGE = 10V 5jis 0 VGE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: FF 200 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,048 Rtwc DC, pro Baustein / per module 0,096 DC, pro Zweig / per arm 0,03 RthCK pro Baustein 1 per module pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: mMWEK CM75E3U-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 ChOppOf IGBTMOD U-Series Module 75 Amperes/600 Volts Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module