VQE 23 E Search Results

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

2SC2714

Abstract: transistor C5D marking 9rb
Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR 2SC2714 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 FM, RF, MIX, IF AM PLIFIER APPLICATIONS. FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF (Typ.)

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z

ic RSN 315 H 42

Abstract: vqe 23c iCR 406 J
Contextual Info: International IGR Rectifier PD-9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of ail power supply topologies

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

optocoupler 207

Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo­ transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package.

Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V

Contextual Info: International Bgj]Rectifier_ PD - 5.028 CPU165MF IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • H EXFRED soft ultrafast diodes • O ptim ized for medium operating frequency 1 to 10kHz

Contextual Info: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage

Contextual Info: SIEMENS SGP02N60 P re lim in a ry data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type VCB h Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage ''CE Collector-gate voltage

Contextual Info: P D -5.044 International I R Rectifier PRELIMINARY CPV362M4U IGBT SIP MODULE UltraFast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses • H E X F R E D soft ultrafast diodes

C428

Abstract: C-428 diode c428
Contextual Info: Provisional Data Sheet PD-9.1147 IRGKIN050M06 ^ R e ctifie r "CHOPPEFT IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 50A V ce O N < 2,OV • Rugged Design •Sim ple gate-drive • Switching-Loss Rating includes all "tail" losses • Short circuit rated

Contextual Info: P D -9 .1 6 9 0 International M R Rectifier IRG4IBC30KD PR E LIM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High switching speed optimized for up to 25kHz With lOW VcE on • Short Circuit Rating 10|as @ 125°C, V se = 15V

Contextual Info: HIT A CH I / O P T O E L E C T R O N I C S SIE D • 44=1b205 G D l l D l b SOT ■ HIT4 GN6015A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-220AB High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage

transistor c905

Contextual Info: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

TRANSISTOR 2FE

Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter