VQE 23 D Search Results

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

c845

Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor c374

Abstract: transistor c373 transistor c377
Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

TRANSISTOR 2FE

Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

Contextual Info: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: International IQ R Rectifier PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: International P D - 9.1108 ioR Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 6 0 0 V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail" losses

G4PC40

Abstract: g4pc40f G4PC4 G4PC
Contextual Info: International IG R Rectifier PD - 9.1463A IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IGBT 500V 50A

Abstract: "Power Diode" 500V 50A
Contextual Info: International m l Rectifier Provisional Data Sheet P D -9 .1155 IRGTIN050M06 Low conduction loss IG BT "HALF-BRIDGE" IG B T INT-A-PAK V Œ = 6 00V lc = 50A V ce O N < 2 ,O V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

irgpc50

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate

Contextual Info: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

Contextual Info: International IQR Rectifier PD -5.044 CPV362M4U PRELIMINARY IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail“ losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

IRG4PC40K

Abstract: irg4pc40kd
Contextual Info: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Contextual Info: Preliminary Data Sheet PD - 9.1115 International lü R e c tifie r IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces = 1200V • Short circuit rated - 1 0 m s @125°C, Vge = 15V