VQE 21 F Search Results

IRGPC50F

Abstract: saa 5000 q1005
Contextual Info: PD - 9.695A International ^¿Rectifier IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail“ losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

VQE 11

Contextual Info: euoec BSM 75 GB 170 DN2 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = ^2 Ohm Type VbE Package O rdering Code BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C 67070-A2702-A67

transistor c324

Contextual Info: International [rc Rectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C818

Abstract: rq20 C814 c815
Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: PD-9.969B kitemational [^ R ectifier IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch - • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

FZ 300 R 06 KL

Contextual Info: FZ 400 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,089 °C/W DC, pro Baustein / per module R th J C Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A tp = 1 ms

VPI05

Abstract: IGBT SGP15N60
Contextual Info: SIEMENS SGP15N60 P rulim inary data IGBT • Low forward voltage drop r / • High switching speed VPI05I55 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type ^CE h Package Ordering Code SGP15N60 600V 15A TO-220 AB Q67040-A . . . .

IRGKI050U06

Contextual Info: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

Contextual Info: FF 400 R 06 KL 2 Thermal properties Therm ische Eigenschaften 0,0345°C/W DC, pro Baustein / per module 0,069 °C/W DC, pro Zweig / per Arm 0,02 °C/W pro Baustein / per module 0,04 °C/W pro Zweig / per Arm Transistor Transistor Elektrische Eigenschaften

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

Contextual Info: CM400DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DUdl IGBTMOD U-Series Module 400 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz

Contextual Info: Preliminary data SIEMENS SGP15N60, SGB15N60, SGW15N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

TVR06

Abstract: n50t
Contextual Info: FZ 400 R 06 KF 2 Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B a u ste in /p e rm o d u le 0,089 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcE S 600

LS303

Abstract: BUP 303 bup203
Contextual Info: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V

Contextual Info: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,

Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z

Contextual Info: 4WEREX CM400HU-24H Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD U-Series Module 400 Amperes/1200 Volts | A Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists