VQE 14 C Search Results

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code

transistor iqr

Contextual Info: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V

Contextual Info: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz

transistor c374

Abstract: transistor c373 transistor c377
Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses

WE VQE 24 E

Abstract: WE VQE 11 E WE VQE 24
Contextual Info: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

irgph50ud

Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Contextual Info: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

VQE 24

Abstract: IRG4PC40UD
Contextual Info: International IGR Rectifier PD 9.1467C IRG4PC40UD P R B iM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

transistor IR 840

Abstract: OZ930
Contextual Info: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

bup3140

Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Contextual Info: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code

RTO BH

Contextual Info: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,

Contextual Info: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses

15 3cv sec

Contextual Info: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V

79lc

Contextual Info: International IOR Rectifier PD -5.039 CPV363M 4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

Contextual Info: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: International Preliminary Data Sheet P D - 9.1085 ^Rectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz V Ces ( = 1200V

Contextual Info: International IQR Rectifier PD -5.044 CPV362M4U PRELIMINARY IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail“ losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

Contextual Info: N AUER PHILIPS/DISCRETE bTE D bbS3T31 O D S m O S S3T « A P X Product Specification Philips Semiconductors BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

Contextual Info: bitemational H r Rectifier PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

RG-910

Abstract: 2mb1100 2MBI100PC-140 ic l00a M233
Contextual Info: 2MBI100PC-140 IG B T M o d u le s IGBT Modules P s e rie s 1400V/100A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

WE VQE 23 F

Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,