VQB 28 E Search Results

diode 1n4007

Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the

VQB 24 E

Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Contextual Info: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor

hp 2212

Abstract: 1783550000
Contextual Info: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000

21134 transistor

Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to

diode 1n4007

Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the

VQB 28 E

Abstract: 1615280000
Contextual Info: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r

CT1012

Abstract: Sd80-02 TIC 107
Contextual Info: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Contextual Info: MM8009 silicon NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica­ tions in m ilita ry and industrial equipment. Suitable fo r use as output, driver, or pre-driver stages in UHF equipm ent and as a fundamental

C583

Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

MRF393

Contextual Info: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier

motorola TE 901

Abstract: MK1V135 2N390S MC14404
Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­

Contextual Info: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and

Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

Contextual Info: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

Contextual Info: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both

Edge710

Abstract: E720BXF Edge4707B EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

2SC394

Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
Contextual Info: S/UD>NPNZm«0Bh5:VS>;*5KPCT75iW 2SC 394 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS o mmwLmmm o High Frequency Amplifier Applications Unit in mm 0 5.8 MAX. 0 4 . 9 5 MAX. o PM Frequency Converter Applications 3E& => ^ * # * * ftzk S w ; ^Q 4 5 # o b = 9 “U

transistor marking MTs ghz

Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Contextual Info: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.

9952a

Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This