VQA 13 Search Results

VQA 23

Contextual Info: date 09/23/2013 page 1 of 7 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~105°C efficiency up to 80% input

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

A277D

Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Contextual Info: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

max4440

Contextual Info: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

754C

Abstract: L3036 2082c K/EL2082J
Contextual Info: EL2082/EL2082C P ta n frf iHIGHl PtfffpAMANfiE l H iAilAlOG i pINTEGRATE W QftClJITS P • Current-Mode Multiplier F ea tu r es G en eral D esc rip tio n • Flexible inputs and outputs, all ground referred • ISO M Hz large and small-signal bandwidth • 46 dB of calibrated gain control

TDB1080

Abstract: rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed
Contextual Info: TDB1080 TDB1080T I.F. LIMITING AMPLIFIER, FM DETECTOR AND AUDIO AMPLIFIER G E N E R A L DESCRIPTIO N The TDB1080 is a bipolar integrated circuit comprising a limiting amplifier, a balanced FM detector and a class-B audio amplifier. It is intended for frequencies up to 500 kHz with either narrow-band or

Contextual Info: Tem ic Cell Based CB8 0.8|im CMOS Cell-Based Designs MATRA MHS Description MHS calibrated COMPASS Cell Based tools and libraries • the density and the speed are close to those of a full on CMOS 0.8 xm, bringing an additional option to its custom, while keeping a design cycle close to the

E720BXF

Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range

Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

A209K

Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über­

AL970

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)

IRFP450R

Abstract: IRFP IRFP 450 application IRFP45O IR mosfets IRFP P CHANNEL MOSFET transistor irfp IRFP451R IRFP452R IRFP453R
Contextual Info: Rugged Power MOSFETs File N u m b er 2018 IRFP450R, IRFP451R IRFP452R, IRFP453R Avalanche Energy Raited N-Channel Power MOSFETs 12A and 13A, 450V-500V rDs on = 0.40 and 0.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

Edge710

Abstract: E720BXF Edge4707B EVM720BXF
Contextual Info: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable

Contextual Info: A dvanced APT5020BVFR pow er Te c h n o lo g y 500V POWER MOS V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect

"Differential Amplifier"

Abstract: J111A CS137 CS-137
Contextual Info: ! C S -1 3 7 D IF F E R E N T IA L A M P L IF IE R S ee S tan d ard P ackage C o n fig u ratio n S ketch No. 3 D u a l-in -L in e 8-P in on pages 4-5. DESCRIPTION T h e C S -1 3 7 is a m o n olithic integrated differen tial am p lifie r featu rin g dif­

sm 0038

Abstract: 0038Q
Contextual Info: A dvanced APT20M38BVR pow er Te c h n o lo g y 200V 67A 0.038Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced APT30M70BVR pow er Te c h n o lo g y 300V 48A 0.070Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

0038Q

Contextual Info: A dvanced APT20M38SVR pow er Te c h n o lo g y 200V P O W E R 67A 0.038Q M O S V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®