VOLTAGE45 Search Results

Contextual Info: PL0543-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: VAT1102N16 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.5p C1/C2 Min. Capacitance Ratio4.75 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: VATC271C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.9p C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: MA46619-277 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.3p C1/C2 Min. Capacitance Ratio5.3 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleChip

Contextual Info: 2322595.1716 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage275 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy67

Contextual Info: SNR560KD14 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage56 V(RMS) Max. Applied Voltage35 V(DC) Max. Applied Voltage45 I(TM) Max.(A) Peak Current1.0k V(C) Nom. (V) Clamping Voltage110 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy10

Contextual Info: SDS60045JECSLU1N Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current60 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)60

Contextual Info: DVH3822-05 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip

Contextual Info: SM8S42DSU Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current20 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.86 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25

Contextual Info: MZT3329 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage45 @I(Z) (A) (Test Condition)280m Tolerance (%)20 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.4.5 Temp Coef pp/10k Maximum Operating Temp (øC)150õ Package StyleTO-220AC

Contextual Info: V175LA10A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy55

Contextual Info: MA46618-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.1 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA45245-287 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap. C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.7k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor Material Package StyleTO-236 Mounting StyleS

Contextual Info: MSP545 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)121’ V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300¥ V(FM) Max.(V) Forward Voltage520mÆ @I(FM) (A) (Test Condition)5.0

Contextual Info: SEN1152-2 Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current100 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.750 V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)25

Contextual Info: SDS75045JABZND1N Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current75 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)75

Contextual Info: V175LC5 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current2.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)25 W(TM) Max.(J) Transient Energy30

Contextual Info: MA4K026-935 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.225 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleAxial-16

Contextual Info: SDS60045JABZND1N Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)60

Contextual Info: VAT272BN18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.4.1p C1/C2 Min. Capacitance Ratio4.9 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.9k f(co) Min. (Hz) Cut-off freq.95G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: SDS18045JEBLED1N Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current18 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage650m @I(FM) (A) (Test Condition)18

Contextual Info: PL0142-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC51407-85 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.4p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.340 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS

Contextual Info: SDS18045JEAMSU1N Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current18 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage650m @I(FM) (A) (Test Condition)18 @Temp. (øC) (Test Condition)25õ