VOLATILITY Search Results
VOLATILITY Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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POPA210IDGK |
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2.2-nV/âHz, low-power, 36-V operational amplifier |
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POPA210ID |
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2.2-nV/âHz, low-power, 36-V operational amplifier |
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TMP117NAIDRVR |
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±0.1°C accurate digital temperature sensor with integrated NV memory 6-WSON -55 to 150 |
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TMP117MAIYBGR |
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±0.1°C accurate digital temperature sensor with integrated NV memory 6-DSBGA 0 to 85 |
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TMP116NAIDRVR |
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±0.2°C Accurate Digital Temperature Sensor With NV Memory 6-WSON -55 to 125 |
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VOLATILITY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DESCRIPTION: The Dense-Pac 32K X 8S family consists of CM OS +5V 32K X 8 Electrically Eraseable Programmable Read-Only Memories EEPROM s . These EEPROM modules are ideal for applications which require low power consumption, non volatility and in-system reprogrammability. The endurance, |
OCR Scan |
deterE42568S-300I DPE42568S-250M DPE42568S-350M DPE45128S-250C DPE45128S-350C DPE45128S-300I DPE45128S-250M DPE45128S-350M DPE45129S-250C DPE45129S-350C | |
INTRODUCTION OF AUTOMATIC ROOM power CONTROL
Abstract: TN1041
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TN1041 1-800-LATTICE INTRODUCTION OF AUTOMATIC ROOM power CONTROL TN1041 | |
HMNP16MM
Abstract: HMNP32MM HMNP32MM-55 HMNP32MM-70 REQ64 K6T4016C3
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HMNP32MM 32Mbyte 32Bit) HMNP32MM 432-byte HMNP16MM HMNP32MM-55 HMNP32MM-70 REQ64 K6T4016C3 | |
A0-A21
Abstract: hanbit non-volatile ram
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32Mbit 40Pin-DIP, 432-bit 120ns 150ns A0-A21 hanbit non-volatile ram | |
HMN328DContextual Info: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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HMN328D 256Kbit 28Pin HMN328D 144-bit | |
A0-A21
Abstract: 40-PIN-DIP
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32Mbit 40Pin-DIP, 432-bit unconditionally070 120ns 150ns A0-A21 40-PIN-DIP | |
Contextual Info: HANBit HMN1M8DV Non-Volatile SRAM MODULE 8Mbit 1024k x 8bit 36Pin – DIP, 3.3V Part No. HMN1M8DV GENERAL DESCRIPTION The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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1024k 36Pin 608-bit 120ns 150ns | |
"Single-Port RAM"
Abstract: FIFO CAM
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225MHz 1-800-LATTICE I0151 "Single-Port RAM" FIFO CAM | |
MRAM
Abstract: BBSRAM MR2A16A honeywell memory sram
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gaussmeter
Abstract: Tunneling Magnetoresistance MR2A16A
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MR2A16A gaussmeter Tunneling Magnetoresistance | |
40-PIN-DIPContextual Info: HANBit HMN1M8DN Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 40Pin-DIP, 5V Part No. HMN1M8DN GENERAL DESCRIPTION The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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40Pin-DIP, 608-bit 40-PIN-DIP | |
A0-A21Contextual Info: HANBit HMN4M8D Non-Volatile SRAM MODULE 32Mbit 4,096K x 8-Bit , 40Pin-DIP, 5V Part No. HMN4M8D GENERAL DESCRIPTION The HMN4M8D Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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32Mbit 40Pin-DIP, 432-bit 120ns 150ns A0-A21 | |
32PIN-DIP
Abstract: HMN5128DV
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HMN5128DV 32Pin-DIP, HMN5128DV 304-bit 32PIN-DIP | |
Contextual Info: Hi-Flow 105 Phase Change Coated Aluminum Features and Benefits T YPICAL PROPERT IES OF H I-FLOW 105 PROPERTY Color • Thermal impedance: 0.37°C-in 2/W @25 psi • Used where electrical isolation is not required • Low volatility – less than 1% • Easy to handle in the manufacturing |
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D3418 | |
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Single Event Upset FPGA
Abstract: RAM SEU
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208-pin 28x28mm) 256-ball 17x17mm) 388-ball 23x23mm) 484-ball 130nm Single Event Upset FPGA RAM SEU | |
Contextual Info: MR0A08B FEATURES • • • • • • • • • 128K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures |
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MR0A08B 48-ball 44-pin 32-pin MR0A08B 576-bit 1-877-347-MRAM EST00183 101113a | |
footprint jedec Mo-119
Abstract: MR256A08BCMA35R
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MR256A08B 20-years MR256A08B 144-bit EST00355 EST355 footprint jedec Mo-119 MR256A08BCMA35R | |
MR0A08BCContextual Info: MR0A08B FEATURES 128K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures |
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MR0A08B 20-years MR0A08B 576-bit EST00183 EST183 MR0A08BC | |
HMN88DContextual Info: HANBit HMN88D Non-Volatile SRAM MODULE 64Kbit 8K x 8-Bit ,28Pin DIP, 5V Part No. HMN88D GENERAL DESCRIPTION The HMN88D Nonvolatile SRAM is a 65,536-bit static RAM organized as 8,192 bytes by 8 bits. The HMN88D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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HMN88D 64Kbit 28Pin HMN88D 536-bit | |
36Pin-DIPContextual Info: HANBit HMN2M8D Non-Volatile SRAM MODULE 16Mbit 2,048K x 8-Bit , 36Pin-DIP, 5V Part No. HMN2M8D GENERAL DESCRIPTION The HMN2M8D Nonvolatile SRAM is a 16,777,216-bit static RAM organized as 2,097,152 bytes by 8 bits. The HMN2M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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16Mbit 36Pin-DIP, 216-bit 120ns 150ns 36Pin-DIP | |
8054 microcontroller
Abstract: S8054 equivalent S8054 XC2000 XC3000 XC3000A XC3000L XC3100 XC4000 XC5200
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XC2000, XC3000, XC4000, XC5200 XC3000 XC4000 XC5200 8054 microcontroller S8054 equivalent S8054 XC2000 XC3000A XC3000L XC3100 XC4000 | |
Contextual Info: HANBit HMN1M8D Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 36Pin-DIP, 5V Part No. HMN1M8D GENERAL DESCRIPTION The HMN1M8D Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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36Pin-DIP, 608-bit 120ns 150ns | |
HMNP16MM
Abstract: HMNP16MM-100 REQ64
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HMNP16MM 16Mbyte 32Bit) HMNP16MM 216-byte HMNP16MM-100 REQ64 | |
Contextual Info: MR0A08B FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures |
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MR0A08B 20-years MR0A08B 576-bit EST00183 |