VN0610L Search Results

VN2222LL

Contextual Info: TELEDYNE C O M P O N EN T S 3bE flH7faD2 OOÜ7fllfl M • TSC D ^ r-3S'25 WTELEDYNE COMPONENTS VN0610LL VN2222LL N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATU RES A B S O L U T E M A X IM U M R A T IN G S ■ ■ ■ Drain-Source Voltage. +60V

2222l

Contextual Info: Tem ic SM« * VN0610L, VNIOKE/KM, VN2222L N-Channel Enhancement-Mode MOS Transistors Zener Gate Protected Product Summary P a rt N um ber V BR DSS M in (V) VN0610L r DS(on) M ax (Q) 0.8 to 2.5 0.27 5 @ V GS = 10 V 0.8 to 2.5 0.17 5 @ V GS = 10 V 0.8 to 2.5

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h an n el — Enhancem ent VN0610LL 3 DRAIN 1 SOURCE MAXIMUM RATINGS Symbol Value Vd s s 60 Vdc Drain-Gate Voltage Rg S = 1 Mil vdgr 60 Vdc Gate-Source Voltage - Continuous - Non-repetltive (tp < 50 fis)

10kls

Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VN0610L

Abstract: TL032
Contextual Info: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range

VN10lm

Contextual Info: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE

TO206AC

Contextual Info: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

10kls

Abstract: 2222L VN2222L VN10KLS 0610L VN0610L vishay siliconix code marking to-92
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

222LL

Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

MOSFET vn2222l

Abstract: vn2222l VN0610L MA801 VN10KLS
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET —Zener Gate PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VN10KM equivalent

Abstract: siliconix VN10KM VN10K equivalent VN10KM siliconix VN10K VN10KE vn10k VN0610L to206
Contextual Info: Siliconix incorporated B O c O « */ ^ VN10KM, V IN I u r v i v i VN0610L S O o-ZbŸ VN10KE MOSPOWER N-Channel Enhancem ent M ode Transistors Zener Diode Protected Gate •TO-92 TO -237 FRO NT V IEW PRODUCT SUM M ARY T 0 -2 0 6 A C BO TTO M VIEW a PART N U M BER

VN0605T

Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
Contextual Info: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

Contextual Info: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part

Contextual Info: VN0606 VN0610 fàkSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ If Ordering Information Order Number / Package b v tcs RdS ON (max) 60V 3n 1.5A VN0606L 60V 5£2 0.75A VN0610LL TO-92 Features Advanced DMOS Technology C These enhancement-mode (normally-off) transistors utilize a

222ll

Abstract: 10LLS
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)

vn0606

Contextual Info: Ofì Supertex ï l~ IC m VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV / R d S ON bq s (max) Order Number / Package if B Vdss TO-92 60V 3£i 1.5A VN0606L 60V 5Î2 0.75A VN0610LL Features Advanced DMOS Technology L i Free from secondary breakdown

N0610

Contextual Info: V N 0606 V N 0610 LJàSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ R d s <o n *D O N ) b v dgs (max) (min) 60V 3£i 60V Order Number / Package TO-92 1.5A VN0606L 0.75A VN0610LL Features Advanced DMOS Technology

Contextual Info: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad

2222ll

Abstract: 10LLS ST C 236 DIODE 0605T
Contextual Info: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5

0610L

Abstract: 2222l 10kls VN10KLS
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V

vn10km

Contextual Info: VN0610L, VNIOKE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number *DS on Max (Q) V GS(th)(V ) ID (A) VN0610L 5 @ V GS= 1 0 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS= 10 V 0.8 to 2.5 0.17 5 @ VGS= 10 V 0.8 to 2.5

VN10KM

Abstract: B0826 VN0610L VN10KE VN2222L
Contextual Info: VN0610L, VN10KE/KM, VN2222L Siliconix NĆChannel EnhancementĆMode MOS Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V