VN 0808L Search Results

0808L

Abstract: VN0808M TO-226A to-237
Contextual Info: Tem ic VN0808L/M, VQ1006P S e m i c o n d u c to r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS M i n (V ) rDS(on) M a x ( Q ) V GS (th )(V ) 4 @ VG S = 10 V 0.8 to 2 0.3 4 @ V c s - 10 V 0.8 to 2 0.33 4 @ V q S = 10 V

Contextual Info: Tem ic VN0808L/M, VQ1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber V BR DSS M in (V) VN0808L 80 VN0808M VQ1006P 90 r DS(on) M ax (Q) I d (A) v GS(lji) (Y) 4 @ V GS = 10V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

0808L

Abstract: 0808LS VN0808L equivalent VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VQ1006P

Abstract: 0808L VN0808L VN0808LS
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

0808L

Abstract: s4 vishay VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

0808M

Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Contextual Info: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS

Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

sivn0808l

Abstract: 0808L VN0808 vn 0808l
Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request