VK200 INDUCTANCE Search Results

VK200 inductance

Abstract: 742 wurth 742 794 50 vk200 vk200 chokes 53ri 742 794 05
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Telefon: +49 (0 79 44) 91 93-0 Telefax: (+49) (0 79 44) 91 93-51 WURTH ELEKTRONIK Verbindungstechnik EM V-Kom ponenten Line Chokes WE-ZB Selfs de protection WE-ZB • Broadband screening

schema electrique micro FM

Abstract: electronique pratique MK090 data book electronique condensateur electrolytique schema MK090 ampli lineaire diviseur de frequence AMPLI LINEAIRE FM ampli schema
Contextual Info: Radio AMPLI LINEAIRE FM 75 à 130 MHz Spécial MICRO-EMETTEUR Etudié pour doper la puissance des petits émetteurs FM expérimentaux, cet amplificateur linéaire délivre grâce à deux étages d'amplification RF, une puissance de 3W environ.

rfc vk200

Abstract: SD1012
Contextual Info: 04C D J L j ^ l L 37 S G S-THOMSON IT '7 ? ~ P 7 0000015 ^ I SOLID $TAtE MIÇROWAVE SD1012-4 ! ^THOMSON-CSF COMPONENTS CORPORATION r j:Mont^pmVvviÎÎè^PAX8^36 • C2fSt 362-85QÓ Ì« TWX Slb:66r^729St^ 7.5 VOLT VHF COMMUNICATIONS TRANSISTOR DESCRIPI10N

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

vk200 RFC

Abstract: thomson microwave transistor sd1234
Contextual Info: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R

SD1080-2

Contextual Info: s G S-THOMSON S O L I D QMC D | ?^2ci23? OQaDDlfl 4 I ” ' T ~ ? 3 ~ 6 i i r~ S T A T E M I C R O W A V E ^ 7 " ^ SD 1080-2 ! THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryviHe, PA.18936» {215 362-8500" TWX 510-661-7299 : \ , '• v- 7.5 VOLT VHF C O M M U N IC A T IO N S T RA N SIST O R

um86409

Abstract: um86409 Datasheet RF encoder um86409 TX433 circuit diagram of rf transmitter and receiver long distance UM53200 TX433boost UM3750 mm53200 module aurel
Contextual Info: ASSEMBLING INSTRUCTIONS FT151 FT151 LONG DISTANCE REMOTE CONTROL TRANSMITTER 400 mW POWER Single channel 433,92 MHz remote control coded MM53200 (4.096 combinations) set with 12 dip-switches. Equipped with an Aurel 400 mW output hybrid RF module (TX433Boost). To be used as an alarm or longdistance remote control systems. Driving the

j130 fet

Abstract: MRF27SG
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

motorola AN211A

Abstract: 42256 planar transformer theory
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

MRF1946 equivalent

Abstract: J043 ic VK200 r.f choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Power Transistors MRF1946 MRF1946A . . . designed for 12.5 volt larg e-sig nal power am plifiers in com m ercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance

planar transformer theory

Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

MRF1946

Abstract: MRF1946A MOTOROLA 381 equivalent MRF1946 equivalent J-101-15
Contextual Info: MOTOROLA Order this document by MRF1946/D SEMICONDUCTOR TECHNICAL DATA MRF1946 MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance

MRF1946 equivalent

Abstract: 145A-09 motorola 547 to 220 MRF1946 VK200 ferrite MRF1946A J101 VK200 resistor 220 ohms 1W
Contextual Info: MOTOROLA Order this document by MRF1946/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Power Transistors MRF1946 MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain

L9181

Abstract: l6262 Nippon capacitors L 0946
Contextual Info: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

mosfet te 2304

Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS

ferroxcube toroids

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

planar transformer theory

Abstract: johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters
Contextual Info: Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

uhf tv power transistor 250w

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

Nippon capacitors

Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

mrf275g

Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND

zener diode c16 ph

Abstract: ph c15 zener
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband