VISIBLE LIGHT PHOTOTRANSISTOR Search Results

transistor 30021

Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light

phototransistor visible light

Abstract: KDT2001
Contextual Info: AUK CORP. Photo Transistor KDT2001 Description The KDT2001 is a high-sensitivity Silicon phototransistor mounted in a side-viewing package with visible light cut-off filter. Pin Connection 1. Emitter 2. Collector Features Thickness : 1.5mm Visible light cut-off type

VISIBLE LIGHT PHOTOTRANSISTOR

Abstract: PT495F
Contextual Info: PT495F Intermediate Acceptance High Sensitivity Phototransistor PT495F • Outline Dimensions ■ Features 1. Epoxy resin package type 2. Compact 2-C0.5 1.55 1.15 0.75 4.0 1.5 2.8 2-0.8 3.0) (1.7 ) Visible light cut-off resin (black) (2-0.6 ) 43.0 ±1 5 . Visible light cut-off type

PT495F

Contextual Info: PT495F Intermediate Acceptance High Sensitivity Phototransistor PT495F • Outline Dimensions ■ Features 1. Epoxy resin package type 2. Compact 2-C0.5 1.55 1.15 0.75 4.0 1.5 2.8 2-0.8 3.0) (1.7 ) Visible light cut-off resin (black) (2-0.6 ) 43.0 ±1 5 . Visible light cut-off type

phototransistor visible light

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PNZ109F

Abstract: phototransistor peak wave sensitivity 600 nm LX6400
Contextual Info: Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN109L

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN109F

Abstract: PNZ109F
Contextual Info: Phototransistors PNZ109F PN109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

KDT2001

Contextual Info: Photo transistor KDT2001 Unit : mm DIMENSION The KDT2001 is a high-sensitivity NPN silicon phototransistor mounted in a side-viewing plastic package with visible light cut-off filter. This phototransistor is both compact and easy to mount. FEATURES Visible ray widely cut off mold type

FH511

Abstract: visible communication LED FH1011 KR311 bar code phototransistor LED PS5132 BN511 DN311 DN511 PS5132
Contextual Info: ISUPER INTENSITY VISIBLE LED/INFRARED LED/PHOTO DETECTOR Stanley’s super-intensity visible and infrared LEDs 660 nm to 950 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the n n - 3 1 1, IIO - 5 1 1 and D D -1 011 series, used for light sourcing and reception,

KR311

Abstract: FH1011
Contextual Info: •SUPER INTENSITY VISIBLE LED/ INFRARED LED/ PHOTO DETECTOR M Stanley’s super-intensity visible and infrared LEDs 660 nm to 880 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the □ □ - 3 1 1 ,-5 1 1 and -1011 series, used for light sourcing and reception, can be

phototransistor visible light

Abstract: PN109F
Contextual Info: Panasonic Phototransistors PN109F Silicon NPN Phototransistor For optical control systems • Features • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting

ee-sb5

Contextual Info: Opto–Switch EE–SB5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.

IR object DETECTOR

Abstract: phototransistor visible light REFLECTIVE OBJECT SENSOR light detector light ic
Contextual Info: Opto–Switch EE–SF5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.

tept5700

Contextual Info: TEPT5700 Vishay Semiconductors Ambient Light Sensor Description TEPT5700, Phototransistor, for ambient light sensor application, plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/offlighting operation. It is sensitive to visible light much

phototransistor visible light

Contextual Info: Back Opto–Switch EE–SB5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.

Infrared phototransistor TO18

Abstract: phototransistor visible light BOD100 880nm
Contextual Info: This component is RoHS compliant BOD100 TO18 Plastic Phototransistor Pb FEATURES • Min/max light current selection. • Good optical to mechanical alignment • Ambient visible light filtering. • Black body gives easy recognition from IR emitter. DESCRIPTION

Photoresistors

Abstract: TEPT4400
Contextual Info: TEPT4400 Vishay Semiconductors Ambient Light Sensor Description TEPT4400, Phototransistor, for ambient light sensor application, plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/offlighting operation. It is sensitive to visible light much

Contextual Info: •SUPER INTENSITY VISIBLE LED/INFRARED LED/PHOTO DETECTOR ■ *4 Stanley’s super-intensity visible and infrared LEDs 660 nm to 950 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the ['ID - 3 1 1, H L 1-511 and L D - 1 011 series, used for light sourcing and reception,

Contextual Info: • S U P ER INTENSITY VISIBLE LED / INFRARED LED / PHOTO DETECTOR S tanley’s super-intensity visible and infrared LEDs 660 nm to 880 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the □ □ - 3 1 1 , -511 and -1011 series, used for light sourcing and reception, can be

PP506-1

Abstract: pp-506-1 DN304 "Co Sensor" CN106 PP506 PP701 BN202 CN501 KR311
Contextual Info: •SU PER INTENSITY VISIBLE LED I INFRARED LED I PHOTO DETECTOR ■ Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the [ID -311, CD-511 and □□-1011 series used for light sourcing and reception can be easily combined with

BOD100

Abstract: Infrared phototransistor TO18
Contextual Info: BOD100 TO18 Plastic Phototransistor FEATURES • Min/max light current selection. • Good optical to mechanical alignment • Ambient visible light filtering. • Black body gives easy recognition from IR emitter. DESCRIPTION The BOD100 is a silicon phototransistor encapsulated

VISIBLE LIGHT PHOTOTRANSISTOR

Abstract: phototransistor visible light Phototransistors Phototransistor RPT-38PB3F RPT38PB3F datasheet phototransistor SIR-34ST3F
Contextual Info: Sensors Phototransistor, top view type RPT-38PB3F The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.

Contextual Info: Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.