VISHAY RESISTOR PULSED POWER Search Results

LCA09330F

Abstract: IEC-294 RESISTOR CARBON FILM OIL-PROOF
Contextual Info: VISHAY/DRALORIC bQE 0 • 'iaOl'mb OOGGSTE 27b ■ EIN UNTERNEHMEN VON « W ¡T S * Features • non-coated carbon film resistor • for use in acid-free oil • pulsed load adjustment Style Resistance Range £2 E-Series 10 3 , 3 - 1M 24 5 10 3 ,3 -1 M 24

NCP3065 application

Abstract: NCP3065DR2G MBR130T1G vishay zener diode 1A 30v dale fuse resistor GRM32NF51E106ZA01L 12 VAC MR16 LED Circuit 2A, 100V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 100V, 2A MBT3946
Contextual Info: DN06048/D Design Note – DN06048/D Reference Design for Sharp ZENIGATA LED Module Device NCP3065 Application Lighting Input Voltage 12 VDC or 12VAC Output Power 3.6 W Topology Buck-Boost I/O Isolation NONE Specifications AC Input Voltage DC Input Output Voltage

ECD-S2AP272CA

Abstract: FDB2532 resistor 2512 10mH inductor 18uF capacitor TVS VISHAY MAX5921 SMBT70A TVS diode 43v Application brownout
Contextual Info: Maxim > App Notes > HOT-SWAP AND POWER SWITCHING CIRCUITS Keywords: telecom, hot-swap, 16ms dropout, 150V transient, MAX5921, ATCA, transient immune, dropout immune, 80 Watt, holdup Mar 26, 2008 APPLICATION NOTE 4163 Telecom Hot-Swap Reference Design Is Immune to Overvoltage and

opto fet

Abstract: AN3912 capacitor 100nf 50v 0805 vishay C1608COG1H151J zero voltage switching pwm full bridge converter VJ0805Y474KXA capacitor 68nf TLV431ACDBV C2012X7R1A105K C4532X7R1C226M
Contextual Info: Maxim > App Notes > Circuit Protection Hot-Swap and Power Switching Circuits Keywords: MAX5953A, non-isolated, power IC solution, Powered Device, PD, Power-over-Ethernet PoE , detection and classification signatures, IEEE 802.3af, Buck converter Sep 22, 2006

tektronix 576 curve tracer

Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2

C3216X5R0J106

Abstract: LM5000 CRCW08051002FRT6 DO3316P-223 MBRA120 VJ0805Y104KXXAT 16MV470WG
Contextual Info: 1.0 Design Specifications Inputs Outputs #1 VinMin=4.0 V Vout1=5.0 V VinMax=9.0 V Iout1=0.6 A 2.0 Design Description The LM5000 is used to design a SEPIC power supply with a positive input voltage rail that can go above or below output voltage rail. The LM5000 is a PWM regulator with internal FET

tfbs4711

Abstract: 293D EN60825-1 IEC60825-1 TFBS4711-TR1 TFBS4711-TR3 capacitor Vishay VJ 1206
Contextual Info: TFBS4711 VISHAY Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description Features • Split power supply, an independent, unregulated supply for IRED Anode and a well regulated supply for VCC • Directly Interfaces with Various Super I/O and

Contextual Info: IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 50 RDS(on) () VGS = - 10 V 0.14 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 15 Configuration Single S Note * Lead (Pb)-containing terminations are not RoHS-compliant.

CRCW08050R0FKEA

Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P

Contextual Info: Si9731 Vishay Siliconix mP Controlled Battery Charger For 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries FEATURES D Complete Isolation from Battery to External Power Supply In Shutdown D Thermal Shutdown D Minimum Number 0f External Components D ESD Protection to 4 kV on Charger Input and Battery

Contextual Info: IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 50 RDS(on) () VGS = - 10 V 0.14 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 15 Configuration Single S Note * Lead (Pb)-containing terminations are not RoHS-compliant.

C15B1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 3, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical

mrf6vp11kh

Abstract: AN1955 A114 A115 C101 JESD22 MRF6VP11KHR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 4, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 4, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

A114

Abstract: A115 AN1955 C101 JESD22 MRF6VP21KHR6 capacitor mttf TRANSISTOR J406
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 2, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

MRF6VP11KH

Abstract: ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical

Tantalum Capacitor kemet

Abstract: 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

Si9731

Abstract: Si9731DB Si9731DQ TSSOP-16 S0225 RY56
Contextual Info: Si9731 Vishay Siliconix mP Controlled Battery Charger For 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries FEATURES D Complete Isolation from Battery to External Power Supply In Shutdown D Thermal Shutdown D Minimum Number 0f External Components D ESD Protection to 4 kV on Charger Input and Battery

S0225

Abstract: Si9731 Si9731DB Si9731DQ TSSOP-16
Contextual Info: Si9731 Vishay Siliconix mP Controlled Battery Charger For 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries FEATURES D Complete Isolation from Battery to External Power Supply In Shutdown D Thermal Shutdown D Minimum Number 0f External Components D ESD Protection to 4 kV on Charger Input and Battery

Allen-Bradley rcr07

Abstract: RCr20 resistors RCR05 Allen-Bradley CARBON COMP RESISTORS RCR07 RCR07 resistor RCR05 Resistor RC05 carbon composition resistor MIL-R-39017 RCR32
Contextual Info: Cross Reference Guide Vishay Dale Selection Guide for Conversion of Carbon Composition Resistors Vishay Dale believes that the information described in this publication is accurate and reliable, and much care has been taken in its preparation. However, no responsibility, financial or otherwise, is accepted for any consequences arising out of the use of this

MRF6VP21KHR6

Abstract: T491X226K035AT AN1955 tuo-4 TRANSISTOR J406 A03TKlc
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 4, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

GRM32ER7YA106K88L

Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
Contextual Info: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station

RCR07 resistor

Abstract: Allen-Bradley rcr07 RCR07 RCR05 Allen-Bradley carbon resistor RCR32 RCR42 RC05 carbon composition resistor RCR05 Resistor allen bradley RCR20
Contextual Info: Cross Reference Guide Vishay Dale Selection Guide for Conversion of Carbon Composition Resistors Vishay Dale believes that the information described in this publication is accurate and reliable, and much care has been taken in its preparation. However, no responsibility, financial or otherwise, is accepted for any consequences arising out of the use of this information.

lm2951

Abstract: LM5020 WSL1210 WSL-1210 C3225X7R1H105K LP2951 VJ0805Y104KXXA CRCW08053162F C3225X5R1E106 35MV330WX
Contextual Info: 1.0 Design Specifications Inputs Outputs #1 VinMin=11.4 Vout1=18 VinMax=28 Iout1=0.2 2.0 Design Description The LM5020 is employed here to design a SEPIC power supply where the positive input voltage rail can range above or below the positive output voltage rail. The LM5020 is a PWM