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    VISHAY N5 Search Results

    VISHAY N5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TFK 1n4148

    Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
    Contextual Info: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes


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    1N3600 1N3604 1N4148 1N914 1N4150 1N4151 1N4153 1N4154 TFK 1n4148 TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk PDF

    RESISTANCE RS71Y

    Abstract: rb 57 sfernice
    Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book THICK FILM, METAL FILM AND WIREWOUND TECHNOLOGIES VISHAY SFERNICE VSE-DB0098-1002 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    VSE-DB0098-1002 RESISTANCE RS71Y rb 57 sfernice PDF

    N4448

    Contextual Info: VISHAY _ ▼ Vishay Telefu nken Alphanumeric Index 1N4148.1 N4448 115 BAS19-BAS21 1N4150 118 BAS281 .BAS283 163 BAW27 187 BAW56 189 BAS285 76 79 1N4151 1N4154 120 BAW75 192 123 BAS286 82 BAW76 194 1N4678.1N4717 243 BAS33.BAS34 166 BAY135 196


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    1N4148 N4448 1N4150 1N4151 1N4154 1N4678. 1N4717 1N4728A. N4761A 1N5221B. PDF

    N5267B

    Contextual Info: 1N5221 B.1 N5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Low reverse current level • V 2-tolerance ± 5% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25°C Parameter


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    1N5221 N5267B 200mA 30K/W 01-Apr-99 N5267B PDF

    n525

    Abstract: N5261 1n5224b-1
    Contextual Info: 1N5221 B.1 N5267B ym m t Vishay Telefunken Silicon Z-Diodes Features Very sharp reverse characteristic Very high stability Low reverse current level Vz-tolerance ± 5% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25 C Parameter Power dissipation


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    1N5221 N5267B 30K/W 06-Aug-99 n525 N5261 1n5224b-1 PDF

    Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the devices Applications


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    TZM5221 TZM5267B 1N5221 N5267B 300K/W, 50mmx50mmx1 01-Apr-99 PDF

    Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications


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    TZM5221 TZM5267B 1N5221 N5267B 50mmx50mmx1 01-Apr-99 PDF

    Contextual Info: TZM5221 B.TZM5267B ▼ Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical w ith the devices 1N5221 B.1 N5267B • Low reverse current level • Vz-to le ra n c e ± 5%


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    TZM5221 TZM5267B 1N5221 N5267B 300K/W, D-74025 01-Apr-99 PDF

    Contextual Info: Single layer ceramic capacitors Condensateurs ceramique monocouches Keramik Einschichtkondensatoren VISHAY/DRALORIC Disc capacitors Condensateurs disques Scheibenkondensatoren Style Modele Typ bOE 0 Classes/Ceramic Classes/Ceramique Klasse/Keramik 1B/P100.N2200


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    1B/P100. N2200 R6000 N5600 40s/Ceramic PDF

    F5 marking code

    Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
    Contextual Info: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month


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    OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 F5 marking code MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123 PDF

    Contextual Info: BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Sillicon planar Zener diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current


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    BZD27C3V6P-M BZD27C200P-M AEC-Q101 2002/95/EC 2002/96/EC BZD27C200P-M 2011/65/EU PDF

    N5625

    Abstract: diodes byw N5624 diodes byw 88 600 r
    Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW82. BYW86 N5625 D-74025 24-Jun-98 diodes byw N5624 diodes byw 88 600 r PDF

    N5062

    Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
    Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW52. BYW56 N5059 N5060 N5061 N5062 D-74025 24-Jun-98 N5062 Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r PDF

    Contextual Info: BZD27-M Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Sillicon planar Zener diodes Available • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability


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    BZD27-M J-STD-020, AEC-Q101: AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    BZD27C6V8P-M

    Contextual Info: BZD27C3V6P-M to BZD27C200P-M Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • Sillicon planar Zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability


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    BZD27C3V6P-M BZD27C200P-M AEC-Q101 2002/95/EC 2002/96/EC DO-219AB 11-Mar-11 BZD27C6V8P-M PDF

    bzd27c62p-m

    Abstract: C18p c51p DO-219AB BZD27C13P-M BZD27C47P-M
    Contextual Info: BZD27C3V6P-M to BZD27C200P-M Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • Sillicon planar zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability


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    BZD27C3V6P-M BZD27C200P-M AEC-Q101 2002/95/EC 2002/96/EC DO-219AB 18-Jul-08 bzd27c62p-m C18p c51p DO-219AB BZD27C13P-M BZD27C47P-M PDF

    Contextual Info: TOS 020016 www.vishay.com Vishay Draloric RF Power Barrel Capacitors with Screw Terminals, Class 1 and Class 2 Ceramic FEATURES • Small size • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation APPLICATIONS • Industrial and medical RF power supply


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    2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: MMSZ5225-V to MMSZ5267-V www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance


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    MMSZ5225-V MMSZ5267-V MMSZ5225B-V) TZM5225 TZM5267, DO-35 1N5225 1N5267 OT-23 MMBZ5225-V PDF

    Contextual Info: MMSZ5225-V to MMSZ5267-V www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance


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    MMSZ5225-V MMSZ5267-V MMSZ5225B-V) TZM5225 TZM5267, DO-35 1N5225 1N5267 OT-23 MMBZ5225-V PDF

    k3255

    Abstract: E3620
    Contextual Info: MMSZ5225-V to MMSZ5267-V www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance


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    MMSZ5225-V MMSZ5267-V MMSZ5225B-V) TZM5225 TZM5267, DO-35 1N5225 1N5267 OT-23 MMBZ5225-V k3255 E3620 PDF

    Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


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    SiP21106 SiP21107 SiP21108 150-mA 2011/65/EU 2002/95/EC. PDF

    rc8u

    Abstract: RS59Y RC2t Series rs71y RESISTANCE RS71Y sovcor Rs63y rc8u resistor RS48Y RC3T
    Contextual Info: Quick Reference Guide Vishay Sfernice THICK FILM TECHNOLOGY CHIP RESISTORS REFERENCES DATA SFERNICE-GEKA SHEET UTE 83260 no. POWER RATING RESISTANCE RANGE TYPICAL TOLERANCE TEMPERATURE LIMITS T.C.R. W CHP 0502 RR 0502 % 70 °C 0.05 W CHP 0505 RR 0505 °C ppm/°C


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    25lectual 18-Jul-08 rc8u RS59Y RC2t Series rs71y RESISTANCE RS71Y sovcor Rs63y rc8u resistor RS48Y RC3T PDF

    SOT23-6L Marking Code

    Abstract: sip21108 sot23-5 sensor LDR connected to PIC PNP POWER TRANSISTOR SOT23-6L TSC75-6L
    Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


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    SiP21106 SiP21107 SiP21108 150-mA 2011/65/EU 2002/95/EC. SOT23-6L Marking Code sip21108 sot23-5 sensor LDR connected to PIC PNP POWER TRANSISTOR SOT23-6L TSC75-6L PDF

    transistor 1047

    Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR
    Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


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    SiP21106 SiP21107 SiP21108 150-mA 11-Mar-11 transistor 1047 SC70-5L TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR PDF