VIH SIDA Search Results
VIH SIDA Datasheets Context Search
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Contextual Info: ELPAQ EMS256K8C 70 - 100ns A d ivisio n o f E L M O Sem iconductor Corp. 2Mb CMOS STATIC SRAM FEATURES Pin Configuration * High density SRAM module MC C 1 32 3 • Organized as 262,144 x B AI« £ t 91 2 A1S At4 C » *0 3 A17 ■ Access time 70 - 100ns a Low power consumption |
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ems256k8c100ns200mw | |
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Contextual Info: KMM366S1603BTL PC66 SDRAM MODULE KMM366S1603BTL SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1603BTL is a 16M bit x 64 Synchro nous Dynamic RAM high density memory module. The Samsung |
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kmm366s1603btl16mx64400mil168-pin | |
Phoenix Contact 29 61 202
Abstract: low voltage triacs 277356
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mc74lcx244948e-02751d-05940c-03+3 | |
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Contextual Info: ELPAQ EMS512K8B A divisio n o t E L M O Sem iconductor Corp. 7 0 - 100 f1S 4Mb CMOS STATIC SRAM FEA TU R ES Pin Configuration • High density SRAM module Al» Al« AH AIS A7 A* * Organized as 524,288 x 8 ■ Access time 70 - 1 00ns ■ Low power consumption |
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ems512k8b200mw100ns | |
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Contextual Info: FINAL BEYOND PERFORMANCE COM'L: -7/10/12/15 IND: -10/12/14/18 MACH 4-32/MACH4LV-32 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 44 pins in PLCC, 44 and 48 pins in TQFP 32 macrocells 7.5 ns tPD Commercial, 10 ns tPD Industrial |
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4-32/mach4lv-32sca15mach4lv-32/32-7/10/12/15pql48+2 | |
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Contextual Info: September 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 1 164ÛOA-50/-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400A is a fully decoded CMOS Dynamic RAM DRAM that oontains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400A features a "fast page" |
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oa-50/-60/-70/-80mb8116400a024-bitssvp-24p-m01+1 | |
19-kHz
Abstract: 19KHz ECG1142 Stereo audio amplifier "8 pin" DIP 38khz vm200 3+pin+sharp+ir+receiver+module+38khz
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00041b5ecg1142t-77-05-0519khz+7 | |
L7C167Contextual Info: L7C167 16K x 1 Static RAM FEATURES □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 135 mW typical at 35 ns Standby: 100 |aW typical |
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l7c167cy7c16720-pinl7c167kc35 | |
lo9585
Abstract: OQ8875 west 6500 PID OQ8875 amplifier CDM12 TDA1301T OQ8844 OQ8868 QFP44 SZA1010
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oq8868tda1301t-likelo9585lo9588+10 | |
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Contextual Info: L7C167 16K x 1 Static RAM FEATURES DESCRIPTION □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum Q Low Power Operation Active: 135 mW typical at 35 ns |
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cv7c16720-pinl7c167l7c167dm35 | |
philips OPTICAL PICK-UP
Abstract: DVD read writer circuit diagram TZA1047HL tza1039 pnx7860 SAA7810 SAA7846 TZA1047 optical drive pdic dvd SMD M1A
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tza1047saa7810saa7811saa7846+9 | |
lo9585
Abstract: OQ8875 OQ8875 Philips LO9588 DVD astigmatic focus detector CD65 OQ8875 amplifier digital servo industrial servo track 100 pin ic with feedback metal detector diagram PI
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oq8868tda1301t-likelo9585lo9588+10 | |
lo9585
Abstract: OQ8875 OQ8868 QFP44 SZA1010 TDA1301 TDA1301T CDM12 DVD astigmatic focus detector satellite decoder circuit diagram
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oq8868tda1301t-likelo9585lo9588+10 | |
microcontroller fingerprint
Abstract: temperature control using pid controller AC Motor Speed Controller ac servo drive circuit amplifier/equalizer TDA1301T B302 tda1302
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tda1301t28-pinmicrocontroller fingerprinttemperature control using pid controller+5 | |
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SAA7347
Abstract: SAA7345 SAA7346 SAA7346H SAA7370
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saa7346scd31513061/1500/01/pp24saa7347+3 | |
MX10E8050IQC
Abstract: MX10E8050IUC dsca 125 MX10E8050IPC byx 21
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mx10e8050i80c5140mhz16-bit+8 | |
Automatic street Light control using microcontroller
Abstract: B302 TDA1301T
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tda1301t28-pinscd29automatic street light control using microcontroller+1 | |
TDA1301T
Abstract: west 6500 PID tda1302 B302
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tda1301t28-pinscd29west 6500 pid+2 | |
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Contextual Info: L7C168/170 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O , Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical |
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l7c168/170l7c170cy7c168/17020/22-pin+2 | |
10-CGM
Abstract: SI3036 isolation transformer v.90 M1 FSD si3012 Si3021 Si3034 Si3035 ferrite transformer atx power supply
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si3035/36si3034/3tial10-cgmsi3036+7 | |
f0035
Abstract: f0035 a1 tagl2 mps a91 TAGL8 0035j tagf2 LR3000GC-20 LR3000A lr3000gc20
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lr3000lr3000alr3000gc-16144-pin+12 | |
MH1V32JJ-7Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH1V32JJ-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 33554432-BIT 1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH1V32JJ is 1048576-word by 32-bit dynamic RAM module. That module consists of nine industry standard 1M x 4 dynamic RAMs in TSOP. |
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mh1v32jj-633554432-bit1048576-wqrd32-bit+6 | |
in400x
Abstract: P0640EA70 bd 625 QFN 64 8x8 footprint 32-PIN 44-PIN MUR120 le79555-3vc TQFP044 795552QC
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le7955544-pinin400xp0640ea70+7 | |
SI3036
Abstract: CTR21 Si3014 Si3021 Si3032 si3012 Si3034 Si3035 isolation transformer v.90
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si3035/36si3034/3tialsi3036ctr21+7 | |